JPS5745920A - Forming method for semiconductor single crystal by energy beam emission - Google Patents

Forming method for semiconductor single crystal by energy beam emission

Info

Publication number
JPS5745920A
JPS5745920A JP12156380A JP12156380A JPS5745920A JP S5745920 A JPS5745920 A JP S5745920A JP 12156380 A JP12156380 A JP 12156380A JP 12156380 A JP12156380 A JP 12156380A JP S5745920 A JPS5745920 A JP S5745920A
Authority
JP
Japan
Prior art keywords
layer
single crystal
single crystalline
energy beam
heat radiating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12156380A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0131288B2 (enrdf_load_stackoverflow
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP12156380A priority Critical patent/JPS5745920A/ja
Publication of JPS5745920A publication Critical patent/JPS5745920A/ja
Publication of JPH0131288B2 publication Critical patent/JPH0131288B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Recrystallisation Techniques (AREA)
JP12156380A 1980-09-02 1980-09-02 Forming method for semiconductor single crystal by energy beam emission Granted JPS5745920A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12156380A JPS5745920A (en) 1980-09-02 1980-09-02 Forming method for semiconductor single crystal by energy beam emission

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12156380A JPS5745920A (en) 1980-09-02 1980-09-02 Forming method for semiconductor single crystal by energy beam emission

Publications (2)

Publication Number Publication Date
JPS5745920A true JPS5745920A (en) 1982-03-16
JPH0131288B2 JPH0131288B2 (enrdf_load_stackoverflow) 1989-06-26

Family

ID=14814324

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12156380A Granted JPS5745920A (en) 1980-09-02 1980-09-02 Forming method for semiconductor single crystal by energy beam emission

Country Status (1)

Country Link
JP (1) JPS5745920A (enrdf_load_stackoverflow)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59121825A (ja) * 1982-12-28 1984-07-14 Agency Of Ind Science & Technol 半導体薄膜の製造方法
JPS59208820A (ja) * 1983-05-13 1984-11-27 Seiko Epson Corp 半導体装置の製造方法
JPS60246621A (ja) * 1984-05-22 1985-12-06 Agency Of Ind Science & Technol シリコン結晶層の製造方法
JPS614900A (ja) * 1984-06-18 1986-01-10 Shoketsu Kinzoku Kogyo Co Ltd エゼクタ装置
JPS614899A (ja) * 1984-06-18 1986-01-10 Shoketsu Kinzoku Kogyo Co Ltd エゼクタ装置
JPS63265421A (ja) * 1987-04-23 1988-11-01 Agency Of Ind Science & Technol 半導体単結晶層の製造方法
JPH0276220A (ja) * 1988-09-12 1990-03-15 Agency Of Ind Science & Technol 半導体単結晶薄膜の形成方法
US5401683A (en) * 1987-12-04 1995-03-28 Agency Of Industrial Science And Technology Method of manufacturing a multi-layered semiconductor substrate

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
J.APPL.PHYS=1966 *

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59121825A (ja) * 1982-12-28 1984-07-14 Agency Of Ind Science & Technol 半導体薄膜の製造方法
JPS59208820A (ja) * 1983-05-13 1984-11-27 Seiko Epson Corp 半導体装置の製造方法
JPS60246621A (ja) * 1984-05-22 1985-12-06 Agency Of Ind Science & Technol シリコン結晶層の製造方法
JPS614900A (ja) * 1984-06-18 1986-01-10 Shoketsu Kinzoku Kogyo Co Ltd エゼクタ装置
JPS614899A (ja) * 1984-06-18 1986-01-10 Shoketsu Kinzoku Kogyo Co Ltd エゼクタ装置
JPS63265421A (ja) * 1987-04-23 1988-11-01 Agency Of Ind Science & Technol 半導体単結晶層の製造方法
US5401683A (en) * 1987-12-04 1995-03-28 Agency Of Industrial Science And Technology Method of manufacturing a multi-layered semiconductor substrate
JPH0276220A (ja) * 1988-09-12 1990-03-15 Agency Of Ind Science & Technol 半導体単結晶薄膜の形成方法

Also Published As

Publication number Publication date
JPH0131288B2 (enrdf_load_stackoverflow) 1989-06-26

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