JPS5797620A - Improvement of crystallinity of semiconductor film - Google Patents
Improvement of crystallinity of semiconductor filmInfo
- Publication number
- JPS5797620A JPS5797620A JP17539580A JP17539580A JPS5797620A JP S5797620 A JPS5797620 A JP S5797620A JP 17539580 A JP17539580 A JP 17539580A JP 17539580 A JP17539580 A JP 17539580A JP S5797620 A JPS5797620 A JP S5797620A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- semiconductor
- laser beam
- forming body
- beam sources
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE:To make the crystallinity of a semiconductor thin film favorable by a method wherein crystallization of the semiconductor is promoted by heating the semiconductor film with laser beams generating from mutually facing laser beam sources. CONSTITUTION:An SiO2 film 2 is formed on a transparent insulating substrate 1, and the Si film 3 is formed moreover on the upper face thereof to form a large areal thin film semiconductor forming body 5, the laser beam sources are provided facing mutually in the vertical direction interposing the forming body between them, the thin film semiconductor forming body 5 and the laser beam sources facing mutually in the vertical direction are equipped transferrably relatively, and laser beams 6, 7 from the laser beam sources are irradiated toward the forming body 5. Contour lines in the thin film become nearly perpendicular to the substrate 1 as shown in dotted lines 8, flow of heat becomes in parallel with the substrate 1, and heat currents in eight directions become dominant. Accordingly the Si thin film 3 consisting of large crystal nuclei 10 can be obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17539580A JPS5797620A (en) | 1980-12-11 | 1980-12-11 | Improvement of crystallinity of semiconductor film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17539580A JPS5797620A (en) | 1980-12-11 | 1980-12-11 | Improvement of crystallinity of semiconductor film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5797620A true JPS5797620A (en) | 1982-06-17 |
Family
ID=15995336
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17539580A Pending JPS5797620A (en) | 1980-12-11 | 1980-12-11 | Improvement of crystallinity of semiconductor film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5797620A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59205711A (en) * | 1983-03-31 | 1984-11-21 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS60134413A (en) * | 1983-12-22 | 1985-07-17 | Seiko Epson Corp | Manufacture of semiconductor device |
US4536231A (en) * | 1982-10-19 | 1985-08-20 | Harris Corporation | Polysilicon thin films of improved electrical uniformity |
US4737233A (en) * | 1984-10-22 | 1988-04-12 | American Telephone And Telegraph Company, At&T Bell Laboratories | Method for making semiconductor crystal films |
JPS6466929A (en) * | 1987-08-11 | 1989-03-13 | Philips Nv | Method of forming defect-free single crystal thin layer of semiconductor material |
-
1980
- 1980-12-11 JP JP17539580A patent/JPS5797620A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4536231A (en) * | 1982-10-19 | 1985-08-20 | Harris Corporation | Polysilicon thin films of improved electrical uniformity |
JPS59205711A (en) * | 1983-03-31 | 1984-11-21 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS60134413A (en) * | 1983-12-22 | 1985-07-17 | Seiko Epson Corp | Manufacture of semiconductor device |
US4737233A (en) * | 1984-10-22 | 1988-04-12 | American Telephone And Telegraph Company, At&T Bell Laboratories | Method for making semiconductor crystal films |
JPS6466929A (en) * | 1987-08-11 | 1989-03-13 | Philips Nv | Method of forming defect-free single crystal thin layer of semiconductor material |
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