JPS5745922A - Forming method for semiconductor single crystalline layer by energy beam irradiation - Google Patents

Forming method for semiconductor single crystalline layer by energy beam irradiation

Info

Publication number
JPS5745922A
JPS5745922A JP12156880A JP12156880A JPS5745922A JP S5745922 A JPS5745922 A JP S5745922A JP 12156880 A JP12156880 A JP 12156880A JP 12156880 A JP12156880 A JP 12156880A JP S5745922 A JPS5745922 A JP S5745922A
Authority
JP
Japan
Prior art keywords
layer
insulator
energy beam
single crystalline
projections
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12156880A
Other languages
Japanese (ja)
Other versions
JPH0135502B2 (en
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP12156880A priority Critical patent/JPS5745922A/en
Publication of JPS5745922A publication Critical patent/JPS5745922A/en
Publication of JPH0135502B2 publication Critical patent/JPH0135502B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To obtain a semiconductor single crystalline layer having a flat surface by emitting energy beam, e.g., light ray or particle beam, etc. to a polycrystalline or amorphous layer formed on an insulator, melting it, and then roughing the surface of the insulator when it is converted to single crystal. CONSTITUTION:A polycrystalline or amorphous layer 2 of Si or the like is accumulated on an insulator 1, e.g., SiO2 or the like, a laser or the like is emitted thereto to melt the layer 2, the layer 2 is then solidified and is converted to single crystal. In this configuration the surface of the insulator 1 is polished or is emitted with energy beam, thereby forming rough surface of 0.15mum in height of the projections. Thus, the layer 2 to become spherical shape by the surface tension when no rough surface exists, laterally and longitudinally expands due to the presence of the projections, and becomes preferably wet for the insulator 1, thereby obtaining flat single crystalline layer 2. However, it is necessary to limit the height of the projections to the degree not to project the layer 2.
JP12156880A 1980-09-02 1980-09-02 Forming method for semiconductor single crystalline layer by energy beam irradiation Granted JPS5745922A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12156880A JPS5745922A (en) 1980-09-02 1980-09-02 Forming method for semiconductor single crystalline layer by energy beam irradiation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12156880A JPS5745922A (en) 1980-09-02 1980-09-02 Forming method for semiconductor single crystalline layer by energy beam irradiation

Publications (2)

Publication Number Publication Date
JPS5745922A true JPS5745922A (en) 1982-03-16
JPH0135502B2 JPH0135502B2 (en) 1989-07-25

Family

ID=14814448

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12156880A Granted JPS5745922A (en) 1980-09-02 1980-09-02 Forming method for semiconductor single crystalline layer by energy beam irradiation

Country Status (1)

Country Link
JP (1) JPS5745922A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI508711B (en) * 2010-11-01 2015-11-21 Uni Charm Corp A folding device for a composite sheet of a continuous sheet of an absorbent sheet, and a folding method
TWI508716B (en) * 2011-02-23 2015-11-21 Uni Charm Corp A manufacturing apparatus for an absorbent article, and a method for producing

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51111090A (en) * 1975-03-26 1976-10-01 Hitachi Ltd Semiconductor device manufacturing process
JPS54137486A (en) * 1978-04-13 1979-10-25 Massachusetts Inst Technology Method of enhancing epiconfiguration and good orientation ofsolid coating

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51111090A (en) * 1975-03-26 1976-10-01 Hitachi Ltd Semiconductor device manufacturing process
JPS54137486A (en) * 1978-04-13 1979-10-25 Massachusetts Inst Technology Method of enhancing epiconfiguration and good orientation ofsolid coating

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI508711B (en) * 2010-11-01 2015-11-21 Uni Charm Corp A folding device for a composite sheet of a continuous sheet of an absorbent sheet, and a folding method
TWI508716B (en) * 2011-02-23 2015-11-21 Uni Charm Corp A manufacturing apparatus for an absorbent article, and a method for producing

Also Published As

Publication number Publication date
JPH0135502B2 (en) 1989-07-25

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