FR2449348A1 - SEMICONDUCTOR LASER AND METHOD FOR THE PRODUCTION THEREOF - Google Patents

SEMICONDUCTOR LASER AND METHOD FOR THE PRODUCTION THEREOF

Info

Publication number
FR2449348A1
FR2449348A1 FR8002986A FR8002986A FR2449348A1 FR 2449348 A1 FR2449348 A1 FR 2449348A1 FR 8002986 A FR8002986 A FR 8002986A FR 8002986 A FR8002986 A FR 8002986A FR 2449348 A1 FR2449348 A1 FR 2449348A1
Authority
FR
France
Prior art keywords
face
laser
pickling
trough
discovered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
FR8002986A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2449348A1 publication Critical patent/FR2449348A1/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/163—Single longitudinal mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18375—Structure of the reflectors, e.g. hybrid mirrors based on metal reflectors

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Weting (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

LE SUBSTRAT 2 DU LASER EST MUNI D'UN CREUX 6 PAR LEQUEL LE RAYONNEMENT DE LASER SORT PERPENDICULAIREMENT A LA SURFACE. SELON L'INVENTION, LE VOLUME ACTIF DU LASER EST DEFINI PAR LA JONCTION PN10, ET LE FOND DU CREUX EST FORME PAR UNE FACE LIMITE OPTIQUEMENT PLANE MISE A DECOUVERT PAR DECAPAGE ENTRE LE SUBSTRAT 2 ET UNE COUCHE PASSIVE 3, LADITE FACE LIMITE 12 ETANT UNE DES FACES REFLECHISSANTES DE LA CAVITE DE RESONATEUR. DE PREFERENCE, L'AUTRE FACE REFLECHISSANTE AUSSI COMPORTE UNE FACE LIMITE ENTRE DEUX COUCHES 5 ET 16, MISE A DECOUVERT PAR DECAPAGE. APPLICATION: FABRICATION DE LASERS DONT LE VOLUME ACTIF EST TRES PETIT.THE LASER SUBSTRATE 2 IS PROVIDED WITH A TROUGH 6 THROUGH WHICH THE LASER RADIATION EXITS PERPENDICULARLY TO THE SURFACE. ACCORDING TO THE INVENTION, THE ACTIVE VOLUME OF THE LASER IS DEFINED BY THE PN10 JUNCTION, AND THE BOTTOM OF THE TROUGH IS FORMED BY AN OPTICALLY FLAT BOUNDARY FACE DISCOVERED BY PICKLING BETWEEN THE SUBSTRATE 2 AND A PASSIVE LAYER 3, THE SAID LIMIT FACE 12 BEING ONE OF THE REFLECTING FACES OF THE RESONATOR CAVITY. PREFERREDLY, THE OTHER REFLECTING FACE ALSO HAS A BOUNDARY FACE BETWEEN TWO LAYERS 5 AND 16, DISCOVERED BY PICKLING. APPLICATION: MANUFACTURE OF LASERS WHOSE ACTIVE VOLUME IS VERY SMALL.

FR8002986A 1979-02-13 1980-02-11 SEMICONDUCTOR LASER AND METHOD FOR THE PRODUCTION THEREOF Pending FR2449348A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7901122A NL7901122A (en) 1979-02-13 1979-02-13 SEMICONDUCTOR LASER AND METHOD OF MANUFACTURE THEREOF.

Publications (1)

Publication Number Publication Date
FR2449348A1 true FR2449348A1 (en) 1980-09-12

Family

ID=19832631

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8002986A Pending FR2449348A1 (en) 1979-02-13 1980-02-11 SEMICONDUCTOR LASER AND METHOD FOR THE PRODUCTION THEREOF

Country Status (8)

Country Link
JP (1) JPS55111192A (en)
AU (1) AU5537180A (en)
DE (1) DE3003667A1 (en)
FR (1) FR2449348A1 (en)
GB (1) GB2040552A (en)
IT (1) IT1140545B (en)
NL (1) NL7901122A (en)
SE (1) SE8001054L (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58215087A (en) * 1982-06-07 1983-12-14 Tokyo Inst Of Technol Manufacture of plane light emission type laser element
JPS5967677A (en) * 1982-07-01 1984-04-17 Semiconductor Res Found Photo integrated circuit
NL8300631A (en) * 1983-02-21 1984-09-17 Philips Nv DEVICE FOR GENERATING COHERENT RADIATION.
JPS60100489A (en) * 1983-08-02 1985-06-04 Furukawa Electric Co Ltd:The Semiconductor laser
FR2575870B1 (en) * 1985-01-10 1987-01-30 Sermage Bernard SEMICONDUCTOR LASER PROVIDED WITH MEANS FOR REJECTING THE SPONTANEOUS EMISSION INTO THE ACTIVE LAYER
JPS6242532A (en) * 1985-08-20 1987-02-24 Matsushita Electric Ind Co Ltd Surface treating method of compound semiconductor
NL8602653A (en) * 1986-10-23 1988-05-16 Philips Nv SEMICONDUCTOR LASER AND METHOD OF MANUFACTURE THEREOF.
DE3728568A1 (en) * 1987-08-27 1989-03-16 Telefunken Electronic Gmbh Semiconductor laser arrangement
JPH04199589A (en) * 1990-11-28 1992-07-20 Mitsubishi Electric Corp Visible light plane emission laser device

Also Published As

Publication number Publication date
DE3003667A1 (en) 1980-08-21
NL7901122A (en) 1980-08-15
IT8019822A0 (en) 1980-02-08
SE8001054L (en) 1980-08-14
AU5537180A (en) 1980-08-21
GB2040552A (en) 1980-08-28
IT1140545B (en) 1986-10-01
JPS55111192A (en) 1980-08-27

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