JPS5745254A - Automatic detector for amount of silicon wafer worked - Google Patents

Automatic detector for amount of silicon wafer worked

Info

Publication number
JPS5745254A
JPS5745254A JP55120965A JP12096580A JPS5745254A JP S5745254 A JPS5745254 A JP S5745254A JP 55120965 A JP55120965 A JP 55120965A JP 12096580 A JP12096580 A JP 12096580A JP S5745254 A JPS5745254 A JP S5745254A
Authority
JP
Japan
Prior art keywords
wafer
amount
silicon wafer
photosensor
slit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55120965A
Other languages
Japanese (ja)
Other versions
JPS628017B2 (en
Inventor
Eiichi Tsukada
Fumikazu Ohira
Kiyoshi Sawada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP55120965A priority Critical patent/JPS5745254A/en
Publication of JPS5745254A publication Critical patent/JPS5745254A/en
Publication of JPS628017B2 publication Critical patent/JPS628017B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54493—Peripheral marks on wafers, e.g. orientation flats, notches, lot number
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

PURPOSE:To detect the amount of the back worked of the silicon wafer automatically with high accuracy, and to decide the direction, situation and depth of correction working and an end point of working by utilizing a photosensor. CONSTITUTION:The silicon wafer 1 for semiconductor element to which a plurality of V grooves 2 for marks detecting the amount of working are formed is loaded on a stage 5, revolution thereof is controlled by means of a pulse motor 4. A light source 6 irradiating the surface of the wafer 1 and a half mirror 7 introducing light from the light source 6 onto the surface of the wafer 1 are mounted to the upper sections of the stage 5. A lens 8 magnifying and projecting the surface of the wafer 1 is fitted between the half mirror 7 and the stage 5, and a slit 9 is formed to a magnifyng projecting imaging surface 9a shaped by the lens 8. The photosensor 10 (such as a phototransistor) detecting light passing through the slit 9 is disposed being opposed to the slit 9. Accordingly, the number and width of the V-shaped grooves projected are detected by means of the photosensor.
JP55120965A 1980-09-01 1980-09-01 Automatic detector for amount of silicon wafer worked Granted JPS5745254A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55120965A JPS5745254A (en) 1980-09-01 1980-09-01 Automatic detector for amount of silicon wafer worked

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55120965A JPS5745254A (en) 1980-09-01 1980-09-01 Automatic detector for amount of silicon wafer worked

Publications (2)

Publication Number Publication Date
JPS5745254A true JPS5745254A (en) 1982-03-15
JPS628017B2 JPS628017B2 (en) 1987-02-20

Family

ID=14799383

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55120965A Granted JPS5745254A (en) 1980-09-01 1980-09-01 Automatic detector for amount of silicon wafer worked

Country Status (1)

Country Link
JP (1) JPS5745254A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5975631A (en) * 1982-10-14 1984-04-28 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of measuring thickness of layer removed by subtract workpiece treatment
JPS6052046A (en) * 1983-06-27 1985-03-23 テレタイプ　コ−ポレ−シヨン Method of producing integrated circuit device
JPS6052048A (en) * 1983-06-27 1985-03-23 テレタイプ　コ−ポレ−シヨン Method of producing integrated circuit device
JPS6052047A (en) * 1983-06-27 1985-03-23 テレタイプ　コ−ポレ−シヨン Method of producing integrated circuit device
JPS60149133U (en) * 1984-03-13 1985-10-03 日本真空技術株式会社 Etching monitor
JPS6178137A (en) * 1984-09-26 1986-04-21 Oki Electric Ind Co Ltd Semiconductor device
JPS61241923A (en) * 1985-04-19 1986-10-28 Hitachi Ltd Apparatus for monitoring etching hole and trench
JPH02257628A (en) * 1989-03-30 1990-10-18 Kyushu Electron Metal Co Ltd Method and apparatus for polishing of semiconductor substrate
US6225461B1 (en) 1997-12-17 2001-05-01 Rengo Co., Ltd. Cellulose microspheres and method of manufacturing the same
JP2019102550A (en) * 2017-11-29 2019-06-24 トヨタ自動車株式会社 Semiconductor substrate manufacturing method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4941956A (en) * 1972-05-01 1974-04-19
JPS52125451U (en) * 1976-03-19 1977-09-24

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4941956A (en) * 1972-05-01 1974-04-19
JPS52125451U (en) * 1976-03-19 1977-09-24

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5975631A (en) * 1982-10-14 1984-04-28 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of measuring thickness of layer removed by subtract workpiece treatment
JPH055169B2 (en) * 1983-06-27 1993-01-21 Teletype Corp
JPS6052048A (en) * 1983-06-27 1985-03-23 テレタイプ　コ−ポレ−シヨン Method of producing integrated circuit device
JPS6052047A (en) * 1983-06-27 1985-03-23 テレタイプ　コ−ポレ−シヨン Method of producing integrated circuit device
JPH053133B2 (en) * 1983-06-27 1993-01-14 Teletype Corp
JPS6052046A (en) * 1983-06-27 1985-03-23 テレタイプ　コ−ポレ−シヨン Method of producing integrated circuit device
JPS60149133U (en) * 1984-03-13 1985-10-03 日本真空技術株式会社 Etching monitor
JPH056655Y2 (en) * 1984-03-13 1993-02-19
JPS6178137A (en) * 1984-09-26 1986-04-21 Oki Electric Ind Co Ltd Semiconductor device
JPS61241923A (en) * 1985-04-19 1986-10-28 Hitachi Ltd Apparatus for monitoring etching hole and trench
JPH02257628A (en) * 1989-03-30 1990-10-18 Kyushu Electron Metal Co Ltd Method and apparatus for polishing of semiconductor substrate
US6225461B1 (en) 1997-12-17 2001-05-01 Rengo Co., Ltd. Cellulose microspheres and method of manufacturing the same
JP2019102550A (en) * 2017-11-29 2019-06-24 トヨタ自動車株式会社 Semiconductor substrate manufacturing method

Also Published As

Publication number Publication date
JPS628017B2 (en) 1987-02-20

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