JPS5742176A - Optical semiconductor element - Google Patents

Optical semiconductor element

Info

Publication number
JPS5742176A
JPS5742176A JP55118586A JP11858680A JPS5742176A JP S5742176 A JPS5742176 A JP S5742176A JP 55118586 A JP55118586 A JP 55118586A JP 11858680 A JP11858680 A JP 11858680A JP S5742176 A JPS5742176 A JP S5742176A
Authority
JP
Japan
Prior art keywords
region
layer
concentration
type
light receiving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55118586A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6222545B2 (enrdf_load_stackoverflow
Inventor
Takao Kaneda
Fukunobu Aisaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55118586A priority Critical patent/JPS5742176A/ja
Publication of JPS5742176A publication Critical patent/JPS5742176A/ja
Publication of JPS6222545B2 publication Critical patent/JPS6222545B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H10F30/2255—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers form heterostructures, e.g. SAM structures

Landscapes

  • Light Receiving Elements (AREA)
JP55118586A 1980-08-28 1980-08-28 Optical semiconductor element Granted JPS5742176A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55118586A JPS5742176A (en) 1980-08-28 1980-08-28 Optical semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55118586A JPS5742176A (en) 1980-08-28 1980-08-28 Optical semiconductor element

Publications (2)

Publication Number Publication Date
JPS5742176A true JPS5742176A (en) 1982-03-09
JPS6222545B2 JPS6222545B2 (enrdf_load_stackoverflow) 1987-05-19

Family

ID=14740247

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55118586A Granted JPS5742176A (en) 1980-08-28 1980-08-28 Optical semiconductor element

Country Status (1)

Country Link
JP (1) JPS5742176A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58154276A (ja) * 1982-03-10 1983-09-13 Nippon Telegr & Teleph Corp <Ntt> アバランシフオトダイオ−ド
US7538367B2 (en) 2005-09-12 2009-05-26 Mitsubishi Electric Corporation Avalanche photodiode

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52101990A (en) * 1976-02-21 1977-08-26 Hitachi Ltd Semiconductor device for photoelectric transducer and its manufacture
JPS5534463A (en) * 1978-09-01 1980-03-11 Fujitsu Ltd Avalanche photodiode

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52101990A (en) * 1976-02-21 1977-08-26 Hitachi Ltd Semiconductor device for photoelectric transducer and its manufacture
JPS5534463A (en) * 1978-09-01 1980-03-11 Fujitsu Ltd Avalanche photodiode

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58154276A (ja) * 1982-03-10 1983-09-13 Nippon Telegr & Teleph Corp <Ntt> アバランシフオトダイオ−ド
US7538367B2 (en) 2005-09-12 2009-05-26 Mitsubishi Electric Corporation Avalanche photodiode

Also Published As

Publication number Publication date
JPS6222545B2 (enrdf_load_stackoverflow) 1987-05-19

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