JPS574166A - High pressure resisting insulating gate type semiconductor device - Google Patents

High pressure resisting insulating gate type semiconductor device

Info

Publication number
JPS574166A
JPS574166A JP7861780A JP7861780A JPS574166A JP S574166 A JPS574166 A JP S574166A JP 7861780 A JP7861780 A JP 7861780A JP 7861780 A JP7861780 A JP 7861780A JP S574166 A JPS574166 A JP S574166A
Authority
JP
Japan
Prior art keywords
drain
layers
layer
source
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7861780A
Other languages
Japanese (ja)
Inventor
Shuji Kubo
Tadashi Uno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP7861780A priority Critical patent/JPS574166A/en
Publication of JPS574166A publication Critical patent/JPS574166A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To remove the limit of characteristics by pinch resistance by a method wherein a conductive type layer the same as source and drain layers is adjoined to the channel side in a shape that it has concentration lower than the layers and is shallow, and overlapped on a heat resisting gate electrode through a gate oxide film. CONSTITUTION:Inversion preventive layers 21 and thick SiO222 are formed, SiO225 is opened and the source and drain 26, 27 are diffused, and the gate oxide films 5, 5', the gate electrode 16 by poly Si and wiring layers 16' are selectively made up on the surface. The drain 2 and the source 3 and layers 18-20 are built up according to diffusion by self-matching by utilizing these. The surface is covered with SiO223, and electrodes are formed selectively. According to this constitution, since the gate electrode extends onto the layer 18, the interface contacting with the film 5 functions as a storage type during operation even when a drain junction is reverse- biased and a depletion layer is made up in the layer 18, the saturation of drain currents due to pinch-off is prevented and an MOS device having high pressure resistance is obtained.
JP7861780A 1980-06-10 1980-06-10 High pressure resisting insulating gate type semiconductor device Pending JPS574166A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7861780A JPS574166A (en) 1980-06-10 1980-06-10 High pressure resisting insulating gate type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7861780A JPS574166A (en) 1980-06-10 1980-06-10 High pressure resisting insulating gate type semiconductor device

Publications (1)

Publication Number Publication Date
JPS574166A true JPS574166A (en) 1982-01-09

Family

ID=13666842

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7861780A Pending JPS574166A (en) 1980-06-10 1980-06-10 High pressure resisting insulating gate type semiconductor device

Country Status (1)

Country Link
JP (1) JPS574166A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4697198A (en) * 1984-08-22 1987-09-29 Hitachi, Ltd. MOSFET which reduces the short-channel effect

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57181071A (en) * 1981-04-22 1982-11-08 Bayer Ag 5-acyloxy-4(5h)-oxazolonium salts, manufacture and use as intermediates for synthesis of herbicidal triazinone

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57181071A (en) * 1981-04-22 1982-11-08 Bayer Ag 5-acyloxy-4(5h)-oxazolonium salts, manufacture and use as intermediates for synthesis of herbicidal triazinone

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4697198A (en) * 1984-08-22 1987-09-29 Hitachi, Ltd. MOSFET which reduces the short-channel effect

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