JPS5740977A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5740977A
JPS5740977A JP55117527A JP11752780A JPS5740977A JP S5740977 A JPS5740977 A JP S5740977A JP 55117527 A JP55117527 A JP 55117527A JP 11752780 A JP11752780 A JP 11752780A JP S5740977 A JPS5740977 A JP S5740977A
Authority
JP
Japan
Prior art keywords
type
transistor
normal operation
base
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55117527A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0318336B2 (cs
Inventor
Kiyokazu Inoue
Masaharu Toyoshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Priority to JP55117527A priority Critical patent/JPS5740977A/ja
Publication of JPS5740977A publication Critical patent/JPS5740977A/ja
Publication of JPH0318336B2 publication Critical patent/JPH0318336B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Amplifiers (AREA)
JP55117527A 1980-08-25 1980-08-25 Semiconductor device Granted JPS5740977A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55117527A JPS5740977A (en) 1980-08-25 1980-08-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55117527A JPS5740977A (en) 1980-08-25 1980-08-25 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5740977A true JPS5740977A (en) 1982-03-06
JPH0318336B2 JPH0318336B2 (cs) 1991-03-12

Family

ID=14713988

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55117527A Granted JPS5740977A (en) 1980-08-25 1980-08-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5740977A (cs)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5997209A (ja) * 1982-11-25 1984-06-05 Mitsubishi Electric Corp 演算増幅用ｉｃ
JPS59208868A (ja) * 1983-05-13 1984-11-27 Hitachi Micro Comput Eng Ltd 半導体集積回路装置
US6605853B2 (en) 2000-07-25 2003-08-12 Denso Corporation Semiconductor device having heat protection circuits

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5138517A (ja) * 1974-09-30 1976-03-31 Teijin Ltd Shijonokyuinhikitorisochi
JPS54157086A (en) * 1978-05-31 1979-12-11 Mitsubishi Electric Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5138517A (ja) * 1974-09-30 1976-03-31 Teijin Ltd Shijonokyuinhikitorisochi
JPS54157086A (en) * 1978-05-31 1979-12-11 Mitsubishi Electric Corp Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5997209A (ja) * 1982-11-25 1984-06-05 Mitsubishi Electric Corp 演算増幅用ｉｃ
JPS59208868A (ja) * 1983-05-13 1984-11-27 Hitachi Micro Comput Eng Ltd 半導体集積回路装置
US6605853B2 (en) 2000-07-25 2003-08-12 Denso Corporation Semiconductor device having heat protection circuits

Also Published As

Publication number Publication date
JPH0318336B2 (cs) 1991-03-12

Similar Documents

Publication Publication Date Title
US4971921A (en) Semiconductor device and method of manufacturing the same
GB1060397A (en) Improvements in and relating to the manufacture of semiconductor devices
JPS54136278A (en) Semiconductor device
JPS5740977A (en) Semiconductor device
US3260900A (en) Temperature compensating barrier layer semiconductor
JPS5376679A (en) Semiconductor device
JPS5493376A (en) Semiconductor integrated circuit device
JPS5565453A (en) Semiconductor device
JPS53105389A (en) Manufacture for insulating gate type semiconductor integrated circuit
JPS57177554A (en) Semiconductor integrated circuit device
JPS57164571A (en) Semiconductro integrated circuit device
JPS5487489A (en) Integrated-resistance circuit for ad/da converter
SU832696A1 (ru) Устройство дл управлени импульс-НыМ ТиРиСТОРНО-ТРАНзиСТОРНыМ РЕгул ТО-POM
JPS5650562A (en) Transistor
JPS56108265A (en) Switching transistor
JPS5458380A (en) Zener diode
JPS57147283A (en) Semiconductor device
JPS6414960A (en) Semiconductor element
JPS55146963A (en) Semiconductor integrated circuit
JPS55108765A (en) Semiconductor device
JPS5621357A (en) Integrated circuit device
JPS54157086A (en) Semiconductor device
JPS56110254A (en) Pnpn semiconductor switch
FR2458145A1 (fr) Structure monolithique comportant un composant semi-conducteur et un capteur de derive thermique, et systeme de regulation d'un composant electronique
JPS5482179A (en) Electrostatic inductive integrated circuit device