JPS5728334A - Etching method - Google Patents

Etching method

Info

Publication number
JPS5728334A
JPS5728334A JP10345580A JP10345580A JPS5728334A JP S5728334 A JPS5728334 A JP S5728334A JP 10345580 A JP10345580 A JP 10345580A JP 10345580 A JP10345580 A JP 10345580A JP S5728334 A JPS5728334 A JP S5728334A
Authority
JP
Japan
Prior art keywords
etching
polycrystalline
detect
terminal point
change
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10345580A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0157494B2 (enrdf_load_stackoverflow
Inventor
Naomichi Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10345580A priority Critical patent/JPS5728334A/ja
Publication of JPS5728334A publication Critical patent/JPS5728334A/ja
Publication of JPH0157494B2 publication Critical patent/JPH0157494B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP10345580A 1980-07-28 1980-07-28 Etching method Granted JPS5728334A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10345580A JPS5728334A (en) 1980-07-28 1980-07-28 Etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10345580A JPS5728334A (en) 1980-07-28 1980-07-28 Etching method

Publications (2)

Publication Number Publication Date
JPS5728334A true JPS5728334A (en) 1982-02-16
JPH0157494B2 JPH0157494B2 (enrdf_load_stackoverflow) 1989-12-06

Family

ID=14354496

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10345580A Granted JPS5728334A (en) 1980-07-28 1980-07-28 Etching method

Country Status (1)

Country Link
JP (1) JPS5728334A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0272623A (ja) * 1988-09-07 1990-03-12 Tokyo Electron Ltd 終点検出方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53112670A (en) * 1977-03-14 1978-10-02 Mitsubishi Electric Corp Monitor method of ion etching
JPS53138943A (en) * 1977-05-11 1978-12-04 Matsushita Electric Ind Co Ltd Etching method and apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53112670A (en) * 1977-03-14 1978-10-02 Mitsubishi Electric Corp Monitor method of ion etching
JPS53138943A (en) * 1977-05-11 1978-12-04 Matsushita Electric Ind Co Ltd Etching method and apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0272623A (ja) * 1988-09-07 1990-03-12 Tokyo Electron Ltd 終点検出方法

Also Published As

Publication number Publication date
JPH0157494B2 (enrdf_load_stackoverflow) 1989-12-06

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