JPS5728327A - Aluminium diffusion - Google Patents

Aluminium diffusion

Info

Publication number
JPS5728327A
JPS5728327A JP10294080A JP10294080A JPS5728327A JP S5728327 A JPS5728327 A JP S5728327A JP 10294080 A JP10294080 A JP 10294080A JP 10294080 A JP10294080 A JP 10294080A JP S5728327 A JPS5728327 A JP S5728327A
Authority
JP
Japan
Prior art keywords
layer
uniform
substrate
constitution
concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10294080A
Other languages
Japanese (ja)
Other versions
JPS612285B2 (en
Inventor
Kazumi Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10294080A priority Critical patent/JPS5728327A/en
Publication of JPS5728327A publication Critical patent/JPS5728327A/en
Publication of JPS612285B2 publication Critical patent/JPS612285B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2257—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To acquire a uniform Al diffusion layer with high concentration by laminating a substance layer with main component of Al and an Si layer on an Si substrate to be heated. CONSTITUTION:Paying full attention to the atmospheric gas condition and the heating condition an Al layer 2 and an Si 4 are vacuum evaporated and deposited on a clean substrate. The layers are then removed selectively. Subsequently an Al diffusion layer 3 is formed by treating at above 1,100 deg.C. According to said constitution firstly Al2 and Si4 react to form a uniform Al-Si layer 5 by heat treatment and thereafter Al diffuses from the layer 5 to the Si substrate. Accordingly, unlike the Al layer alone, a partially concentrated layer is not formed so that the reaction progresses uniformly to form a junction with uniform concentration of impurities. Further the proper thickness of the Al-Si layer 5 is about 3,000Angstrom while thin thickness causes insufficient surface concentration and excessive thickness brings out sometimes a partial highly concentrated region.
JP10294080A 1980-07-26 1980-07-26 Aluminium diffusion Granted JPS5728327A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10294080A JPS5728327A (en) 1980-07-26 1980-07-26 Aluminium diffusion

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10294080A JPS5728327A (en) 1980-07-26 1980-07-26 Aluminium diffusion

Publications (2)

Publication Number Publication Date
JPS5728327A true JPS5728327A (en) 1982-02-16
JPS612285B2 JPS612285B2 (en) 1986-01-23

Family

ID=14340825

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10294080A Granted JPS5728327A (en) 1980-07-26 1980-07-26 Aluminium diffusion

Country Status (1)

Country Link
JP (1) JPS5728327A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0535802U (en) * 1991-10-17 1993-05-14 次雄 平賀 Kendo tabi

Also Published As

Publication number Publication date
JPS612285B2 (en) 1986-01-23

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