JPS5727065A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5727065A
JPS5727065A JP10196380A JP10196380A JPS5727065A JP S5727065 A JPS5727065 A JP S5727065A JP 10196380 A JP10196380 A JP 10196380A JP 10196380 A JP10196380 A JP 10196380A JP S5727065 A JPS5727065 A JP S5727065A
Authority
JP
Japan
Prior art keywords
region
impurities
diffusion region
carriers
concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10196380A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0434313B2 (enrdf_load_html_response
Inventor
Hiroyuki Oshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP10196380A priority Critical patent/JPS5727065A/ja
Publication of JPS5727065A publication Critical patent/JPS5727065A/ja
Publication of JPH0434313B2 publication Critical patent/JPH0434313B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Liquid Crystal (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Bipolar Transistors (AREA)
JP10196380A 1980-07-25 1980-07-25 Semiconductor device Granted JPS5727065A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10196380A JPS5727065A (en) 1980-07-25 1980-07-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10196380A JPS5727065A (en) 1980-07-25 1980-07-25 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5727065A true JPS5727065A (en) 1982-02-13
JPH0434313B2 JPH0434313B2 (enrdf_load_html_response) 1992-06-05

Family

ID=14314514

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10196380A Granted JPS5727065A (en) 1980-07-25 1980-07-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5727065A (enrdf_load_html_response)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5801400A (en) * 1995-01-10 1998-09-01 Victor Company Of Japan, Ltd. Active matrix device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5390771A (en) * 1977-01-20 1978-08-09 Nec Corp Field effect transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5390771A (en) * 1977-01-20 1978-08-09 Nec Corp Field effect transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5801400A (en) * 1995-01-10 1998-09-01 Victor Company Of Japan, Ltd. Active matrix device

Also Published As

Publication number Publication date
JPH0434313B2 (enrdf_load_html_response) 1992-06-05

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