JPS5727059A - Manufacture of optical thyristor - Google Patents

Manufacture of optical thyristor

Info

Publication number
JPS5727059A
JPS5727059A JP10225180A JP10225180A JPS5727059A JP S5727059 A JPS5727059 A JP S5727059A JP 10225180 A JP10225180 A JP 10225180A JP 10225180 A JP10225180 A JP 10225180A JP S5727059 A JPS5727059 A JP S5727059A
Authority
JP
Japan
Prior art keywords
layer
base layer
light receiving
receiving section
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10225180A
Other languages
Japanese (ja)
Inventor
Tsuneo Ogura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10225180A priority Critical patent/JPS5727059A/en
Publication of JPS5727059A publication Critical patent/JPS5727059A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristor
    • H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristor the device being a photothyristor

Abstract

PURPOSE:To obtain the optical thyristor having excellent ignition sensitivity and critical off voltage rise ratio by a method wherein the desired layer resistance value is acquired by etching the second base layer under a light receiving section, and the second emitter layer functioning as the light receiving section is laminated and formed on the layer. CONSTITUTION:P type second base layer 2 and first emitter layer 3 are shaped by diffusing impurities to the first N type base layer 1 from two sides. The second base layer 2 of the light receiving section is etched off until necessary layer resistance is obtained. The second N type emitter layer 9 of the light receiving section is formed through epitaxial growth and a selective etching process. A cathode electrode 6 is shaped which short-circuits the second emitter layer 9 and the second base layer 2. The thyristor can be manufactured in uniform characteristics and in excllent yield because the layer resistance of the second base layer exerting effects on the sensitivity of optical ignition and the critical off voltage rise ratio is measured and the emitter layer is grown in an epitaxial shape lest the value should be changed.
JP10225180A 1980-07-25 1980-07-25 Manufacture of optical thyristor Pending JPS5727059A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10225180A JPS5727059A (en) 1980-07-25 1980-07-25 Manufacture of optical thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10225180A JPS5727059A (en) 1980-07-25 1980-07-25 Manufacture of optical thyristor

Publications (1)

Publication Number Publication Date
JPS5727059A true JPS5727059A (en) 1982-02-13

Family

ID=14322374

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10225180A Pending JPS5727059A (en) 1980-07-25 1980-07-25 Manufacture of optical thyristor

Country Status (1)

Country Link
JP (1) JPS5727059A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62260786A (en) * 1986-05-08 1987-11-13 株式会社ヘキトク Line system for manufacturing smoked roof tile

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62260786A (en) * 1986-05-08 1987-11-13 株式会社ヘキトク Line system for manufacturing smoked roof tile
JPH0249269B2 (en) * 1986-05-08 1990-10-29 Hekitoku Kk

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