JPS5726467A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5726467A
JPS5726467A JP10164380A JP10164380A JPS5726467A JP S5726467 A JPS5726467 A JP S5726467A JP 10164380 A JP10164380 A JP 10164380A JP 10164380 A JP10164380 A JP 10164380A JP S5726467 A JPS5726467 A JP S5726467A
Authority
JP
Japan
Prior art keywords
region
window
film
channel
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10164380A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6366069B2 (enrdf_load_html_response
Inventor
Kazuo Yajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10164380A priority Critical patent/JPS5726467A/ja
Publication of JPS5726467A publication Critical patent/JPS5726467A/ja
Publication of JPS6366069B2 publication Critical patent/JPS6366069B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP10164380A 1980-07-24 1980-07-24 Manufacture of semiconductor device Granted JPS5726467A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10164380A JPS5726467A (en) 1980-07-24 1980-07-24 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10164380A JPS5726467A (en) 1980-07-24 1980-07-24 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5726467A true JPS5726467A (en) 1982-02-12
JPS6366069B2 JPS6366069B2 (enrdf_load_html_response) 1988-12-19

Family

ID=14306050

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10164380A Granted JPS5726467A (en) 1980-07-24 1980-07-24 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5726467A (enrdf_load_html_response)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5914676A (ja) * 1982-07-16 1984-01-25 Nec Corp 縦型電界効果トランジスタの製造方法
JPS5917283A (ja) * 1982-06-28 1984-01-28 ゼネラル・エレクトリツク・カンパニイ 深い部分を含むベ−ス領域を有する半導体デバイスの製造方法
JPS5947770A (ja) * 1982-08-09 1984-03-17 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン 半導体装置
JPS6273778A (ja) * 1985-09-27 1987-04-04 Nec Corp 縦型電界効果トランジスタの製造方法
JPS6350069A (ja) * 1986-08-19 1988-03-02 Matsushita Electronics Corp Ｍｏｓ電界効果トランジスタの製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5917283A (ja) * 1982-06-28 1984-01-28 ゼネラル・エレクトリツク・カンパニイ 深い部分を含むベ−ス領域を有する半導体デバイスの製造方法
JPS5914676A (ja) * 1982-07-16 1984-01-25 Nec Corp 縦型電界効果トランジスタの製造方法
JPS5947770A (ja) * 1982-08-09 1984-03-17 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン 半導体装置
JPS6273778A (ja) * 1985-09-27 1987-04-04 Nec Corp 縦型電界効果トランジスタの製造方法
JPS6350069A (ja) * 1986-08-19 1988-03-02 Matsushita Electronics Corp Ｍｏｓ電界効果トランジスタの製造方法

Also Published As

Publication number Publication date
JPS6366069B2 (enrdf_load_html_response) 1988-12-19

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