JPS6366069B2 - - Google Patents

Info

Publication number
JPS6366069B2
JPS6366069B2 JP55101643A JP10164380A JPS6366069B2 JP S6366069 B2 JPS6366069 B2 JP S6366069B2 JP 55101643 A JP55101643 A JP 55101643A JP 10164380 A JP10164380 A JP 10164380A JP S6366069 B2 JPS6366069 B2 JP S6366069B2
Authority
JP
Japan
Prior art keywords
window
silicon dioxide
film
dioxide film
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55101643A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5726467A (en
Inventor
Kazuo Yajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10164380A priority Critical patent/JPS5726467A/ja
Publication of JPS5726467A publication Critical patent/JPS5726467A/ja
Publication of JPS6366069B2 publication Critical patent/JPS6366069B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP10164380A 1980-07-24 1980-07-24 Manufacture of semiconductor device Granted JPS5726467A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10164380A JPS5726467A (en) 1980-07-24 1980-07-24 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10164380A JPS5726467A (en) 1980-07-24 1980-07-24 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5726467A JPS5726467A (en) 1982-02-12
JPS6366069B2 true JPS6366069B2 (enrdf_load_html_response) 1988-12-19

Family

ID=14306050

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10164380A Granted JPS5726467A (en) 1980-07-24 1980-07-24 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5726467A (enrdf_load_html_response)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4443931A (en) * 1982-06-28 1984-04-24 General Electric Company Method of fabricating a semiconductor device with a base region having a deep portion
JPS5914676A (ja) * 1982-07-16 1984-01-25 Nec Corp 縦型電界効果トランジスタの製造方法
FR2531572A1 (fr) * 1982-08-09 1984-02-10 Radiotechnique Compelec Dispositif mos a structure plane multicellulaire
JPS6273778A (ja) * 1985-09-27 1987-04-04 Nec Corp 縦型電界効果トランジスタの製造方法
JPH07123127B2 (ja) * 1986-08-19 1995-12-25 松下電子工業株式会社 Ｍｏｓ電界効果トランジスタの製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element

Also Published As

Publication number Publication date
JPS5726467A (en) 1982-02-12

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