JPS572547A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS572547A
JPS572547A JP7704680A JP7704680A JPS572547A JP S572547 A JPS572547 A JP S572547A JP 7704680 A JP7704680 A JP 7704680A JP 7704680 A JP7704680 A JP 7704680A JP S572547 A JPS572547 A JP S572547A
Authority
JP
Japan
Prior art keywords
layer
oxidized film
polycrystalline
polycrystalline layer
contact hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7704680A
Other languages
Japanese (ja)
Inventor
Masahiro Hatanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7704680A priority Critical patent/JPS572547A/en
Publication of JPS572547A publication Critical patent/JPS572547A/en
Pending legal-status Critical Current

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To stably open a contact hole by forming another polycrystalline layer on the first polycrystalline layer simultaneously upon formation of the second polycrystalline layer in such a manner as to equalize the thickness of an insulating film formed on the surface. CONSTITUTION:A thermally oxidized film is formed on a silicon single crystalline substrate 1, the first polycrystalline silicon layer 3 is selectively formed, and an oxidized film is covered. Then, the first polycrystalline layer 3 is partly exposed by photoetching, and a polycrystalline layer 13 is formed simultaneously upon formation of the second polycrystalline layer 6. Subsequently, a thermally oxidized film is formed on the surface of the layer 13, and an oxidized film layer 9 containing phosphorus is formed. A contact hole is then opened by using a photoresist 10. Accordingly, only the thickness of the oxidized film is approximately equalized by forming the layer 13, and the controllability for removing by etching can be increased. Further, the difference of the size of the contact hole can be reduced.
JP7704680A 1980-06-05 1980-06-05 Semiconductor device and manufacture thereof Pending JPS572547A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7704680A JPS572547A (en) 1980-06-05 1980-06-05 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7704680A JPS572547A (en) 1980-06-05 1980-06-05 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS572547A true JPS572547A (en) 1982-01-07

Family

ID=13622827

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7704680A Pending JPS572547A (en) 1980-06-05 1980-06-05 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS572547A (en)

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