JPS572547A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS572547A JPS572547A JP7704680A JP7704680A JPS572547A JP S572547 A JPS572547 A JP S572547A JP 7704680 A JP7704680 A JP 7704680A JP 7704680 A JP7704680 A JP 7704680A JP S572547 A JPS572547 A JP S572547A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- oxidized film
- polycrystalline
- polycrystalline layer
- contact hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To stably open a contact hole by forming another polycrystalline layer on the first polycrystalline layer simultaneously upon formation of the second polycrystalline layer in such a manner as to equalize the thickness of an insulating film formed on the surface. CONSTITUTION:A thermally oxidized film is formed on a silicon single crystalline substrate 1, the first polycrystalline silicon layer 3 is selectively formed, and an oxidized film is covered. Then, the first polycrystalline layer 3 is partly exposed by photoetching, and a polycrystalline layer 13 is formed simultaneously upon formation of the second polycrystalline layer 6. Subsequently, a thermally oxidized film is formed on the surface of the layer 13, and an oxidized film layer 9 containing phosphorus is formed. A contact hole is then opened by using a photoresist 10. Accordingly, only the thickness of the oxidized film is approximately equalized by forming the layer 13, and the controllability for removing by etching can be increased. Further, the difference of the size of the contact hole can be reduced.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7704680A JPS572547A (en) | 1980-06-05 | 1980-06-05 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7704680A JPS572547A (en) | 1980-06-05 | 1980-06-05 | Semiconductor device and manufacture thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS572547A true JPS572547A (en) | 1982-01-07 |
Family
ID=13622827
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7704680A Pending JPS572547A (en) | 1980-06-05 | 1980-06-05 | Semiconductor device and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS572547A (en) |
-
1980
- 1980-06-05 JP JP7704680A patent/JPS572547A/en active Pending
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