JPS5724540A - Rinsing of through hole in semiconductor device - Google Patents
Rinsing of through hole in semiconductor deviceInfo
- Publication number
- JPS5724540A JPS5724540A JP9818580A JP9818580A JPS5724540A JP S5724540 A JPS5724540 A JP S5724540A JP 9818580 A JP9818580 A JP 9818580A JP 9818580 A JP9818580 A JP 9818580A JP S5724540 A JPS5724540 A JP S5724540A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- hole
- rinsing
- layers
- ammonium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 abstract 2
- 239000000126 substance Substances 0.000 abstract 2
- 229910019142 PO4 Inorganic materials 0.000 abstract 1
- LFVGISIMTYGQHF-UHFFFAOYSA-N ammonium dihydrogen phosphate Chemical compound [NH4+].OP(O)([O-])=O LFVGISIMTYGQHF-UHFFFAOYSA-N 0.000 abstract 1
- 229910000387 ammonium dihydrogen phosphate Inorganic materials 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 abstract 1
- 238000001312 dry etching Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 235000019837 monoammonium phosphate Nutrition 0.000 abstract 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 abstract 1
- 239000010452 phosphate Substances 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 abstract 1
- 229920006395 saturated elastomer Polymers 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9818580A JPS5724540A (en) | 1980-07-19 | 1980-07-19 | Rinsing of through hole in semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9818580A JPS5724540A (en) | 1980-07-19 | 1980-07-19 | Rinsing of through hole in semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5724540A true JPS5724540A (en) | 1982-02-09 |
JPS6255694B2 JPS6255694B2 (enrdf_load_stackoverflow) | 1987-11-20 |
Family
ID=14212954
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9818580A Granted JPS5724540A (en) | 1980-07-19 | 1980-07-19 | Rinsing of through hole in semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5724540A (enrdf_load_stackoverflow) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5768033A (en) * | 1980-10-16 | 1982-04-26 | Toshiba Corp | Manufacture of semiconductor device |
JPS61194833A (ja) * | 1985-02-25 | 1986-08-29 | Fujitsu Ltd | シリコン基板のエツチング処理方法 |
JPS62252134A (ja) * | 1986-04-24 | 1987-11-02 | Matsushita Electric Ind Co Ltd | 化合物半導体装置の製造方法 |
JPS63190380A (ja) * | 1987-02-02 | 1988-08-05 | Matsushita Electronics Corp | 半導体装置の製造方法 |
US4826784A (en) * | 1987-11-13 | 1989-05-02 | Kopin Corporation | Selective OMCVD growth of compound semiconductor materials on silicon substrates |
JPH0355833A (ja) * | 1989-07-24 | 1991-03-11 | Sharp Corp | 半導体装置の製造方法 |
JPH03100554A (ja) * | 1989-09-13 | 1991-04-25 | Fuji Photo Film Co Ltd | 現像用ブラシ |
WO2000034996A1 (fr) * | 1998-12-09 | 2000-06-15 | Kishimoto Sangyo Co., Ltd. | Agent de decapage pour enlever les residus de reserve |
-
1980
- 1980-07-19 JP JP9818580A patent/JPS5724540A/ja active Granted
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5768033A (en) * | 1980-10-16 | 1982-04-26 | Toshiba Corp | Manufacture of semiconductor device |
JPS61194833A (ja) * | 1985-02-25 | 1986-08-29 | Fujitsu Ltd | シリコン基板のエツチング処理方法 |
JPS62252134A (ja) * | 1986-04-24 | 1987-11-02 | Matsushita Electric Ind Co Ltd | 化合物半導体装置の製造方法 |
JPS63190380A (ja) * | 1987-02-02 | 1988-08-05 | Matsushita Electronics Corp | 半導体装置の製造方法 |
US4826784A (en) * | 1987-11-13 | 1989-05-02 | Kopin Corporation | Selective OMCVD growth of compound semiconductor materials on silicon substrates |
JPH0355833A (ja) * | 1989-07-24 | 1991-03-11 | Sharp Corp | 半導体装置の製造方法 |
JPH03100554A (ja) * | 1989-09-13 | 1991-04-25 | Fuji Photo Film Co Ltd | 現像用ブラシ |
WO2000034996A1 (fr) * | 1998-12-09 | 2000-06-15 | Kishimoto Sangyo Co., Ltd. | Agent de decapage pour enlever les residus de reserve |
US6534459B1 (en) | 1998-12-09 | 2003-03-18 | Kishimoto Sangyo Co., Ltd. | Resist residue remover |
Also Published As
Publication number | Publication date |
---|---|
JPS6255694B2 (enrdf_load_stackoverflow) | 1987-11-20 |
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