JPS57196581A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57196581A
JPS57196581A JP8139481A JP8139481A JPS57196581A JP S57196581 A JPS57196581 A JP S57196581A JP 8139481 A JP8139481 A JP 8139481A JP 8139481 A JP8139481 A JP 8139481A JP S57196581 A JPS57196581 A JP S57196581A
Authority
JP
Japan
Prior art keywords
umbrella
section
organic compound
etching
eave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8139481A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6233754B2 (enrdf_load_stackoverflow
Inventor
Takeshi Konuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP8139481A priority Critical patent/JPS57196581A/ja
Publication of JPS57196581A publication Critical patent/JPS57196581A/ja
Publication of JPS6233754B2 publication Critical patent/JPS6233754B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP8139481A 1981-05-27 1981-05-27 Manufacture of semiconductor device Granted JPS57196581A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8139481A JPS57196581A (en) 1981-05-27 1981-05-27 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8139481A JPS57196581A (en) 1981-05-27 1981-05-27 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57196581A true JPS57196581A (en) 1982-12-02
JPS6233754B2 JPS6233754B2 (enrdf_load_stackoverflow) 1987-07-22

Family

ID=13745081

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8139481A Granted JPS57196581A (en) 1981-05-27 1981-05-27 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57196581A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60115268A (ja) * 1983-11-28 1985-06-21 Fujitsu Ltd 半導体装置の製造方法
US4569119A (en) * 1983-06-13 1986-02-11 Kabushiki Kaisha Toshiba Manufacturing method of Schottky gate FET

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4569119A (en) * 1983-06-13 1986-02-11 Kabushiki Kaisha Toshiba Manufacturing method of Schottky gate FET
JPS60115268A (ja) * 1983-11-28 1985-06-21 Fujitsu Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS6233754B2 (enrdf_load_stackoverflow) 1987-07-22

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