JPS57196573A - Manufacture of mos type semiconductor device - Google Patents

Manufacture of mos type semiconductor device

Info

Publication number
JPS57196573A
JPS57196573A JP8035581A JP8035581A JPS57196573A JP S57196573 A JPS57196573 A JP S57196573A JP 8035581 A JP8035581 A JP 8035581A JP 8035581 A JP8035581 A JP 8035581A JP S57196573 A JPS57196573 A JP S57196573A
Authority
JP
Japan
Prior art keywords
electrode
source
drain
insulating film
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8035581A
Other languages
English (en)
Inventor
Katsuhiro Kawabuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8035581A priority Critical patent/JPS57196573A/ja
Publication of JPS57196573A publication Critical patent/JPS57196573A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
JP8035581A 1981-05-27 1981-05-27 Manufacture of mos type semiconductor device Pending JPS57196573A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8035581A JPS57196573A (en) 1981-05-27 1981-05-27 Manufacture of mos type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8035581A JPS57196573A (en) 1981-05-27 1981-05-27 Manufacture of mos type semiconductor device

Publications (1)

Publication Number Publication Date
JPS57196573A true JPS57196573A (en) 1982-12-02

Family

ID=13715938

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8035581A Pending JPS57196573A (en) 1981-05-27 1981-05-27 Manufacture of mos type semiconductor device

Country Status (1)

Country Link
JP (1) JPS57196573A (ja)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6012772A (ja) * 1983-07-01 1985-01-23 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JPS60128656A (ja) * 1983-12-16 1985-07-09 Hitachi Ltd 半導体装置
JPS6144470A (ja) * 1984-05-15 1986-03-04 デイジタル　イクイプメント　コ−ポレ−シヨン 集積回路チップにおける金属充填方法
JPS61198780A (ja) * 1985-02-28 1986-09-03 Toshiba Corp 半導体装置の製造方法
JPS6230365A (ja) * 1985-04-19 1987-02-09 Nec Corp 半導体装置及びその製造方法
JPS63291472A (ja) * 1987-05-25 1988-11-29 Nippon Telegr & Teleph Corp <Ntt> 半導体装置及びその製造方法
JPS63299274A (ja) * 1987-05-29 1988-12-06 New Japan Radio Co Ltd 半導体装置の製造法
JPH01175260A (ja) * 1987-12-29 1989-07-11 Nec Corp 絶縁ゲート電界効果トランジスタの製造方法
US5030584A (en) * 1988-10-06 1991-07-09 Nec Corporation Method for fabricating MOS semiconductor device operable in a high voltage range using polysilicon outdiffusion
US5079180A (en) * 1988-12-22 1992-01-07 Texas Instruments Incorporated Method of fabricating a raised source/drain transistor
US5089435A (en) * 1987-05-27 1992-02-18 Nec Corporation Method of making a field effect transistor with short channel length
US5668037A (en) * 1995-10-06 1997-09-16 Micron Technology, Inc. Method of forming a resistor and integrated circuitry having a resistor construction
US5668027A (en) * 1991-10-16 1997-09-16 Nippon Steel Semiconductor Corporation Method of manufacturing a MOS transistor semiconductor device
US5923078A (en) * 1996-07-11 1999-07-13 Micron Technology, Inc. Method of forming a resistor and integrated circuitry having a resistor construction
US6130137A (en) * 1997-10-20 2000-10-10 Micron Technology, Inc. Method of forming a resistor and integrated circuitry having a resistor construction

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6012772A (ja) * 1983-07-01 1985-01-23 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JPS60128656A (ja) * 1983-12-16 1985-07-09 Hitachi Ltd 半導体装置
JPS6144470A (ja) * 1984-05-15 1986-03-04 デイジタル　イクイプメント　コ−ポレ−シヨン 集積回路チップにおける金属充填方法
JPH0569292B2 (ja) * 1984-05-15 1993-09-30 Digital Equipment Corp
JPS61198780A (ja) * 1985-02-28 1986-09-03 Toshiba Corp 半導体装置の製造方法
JPS6230365A (ja) * 1985-04-19 1987-02-09 Nec Corp 半導体装置及びその製造方法
JPS63291472A (ja) * 1987-05-25 1988-11-29 Nippon Telegr & Teleph Corp <Ntt> 半導体装置及びその製造方法
US5089435A (en) * 1987-05-27 1992-02-18 Nec Corporation Method of making a field effect transistor with short channel length
JPS63299274A (ja) * 1987-05-29 1988-12-06 New Japan Radio Co Ltd 半導体装置の製造法
JPH01175260A (ja) * 1987-12-29 1989-07-11 Nec Corp 絶縁ゲート電界効果トランジスタの製造方法
US5030584A (en) * 1988-10-06 1991-07-09 Nec Corporation Method for fabricating MOS semiconductor device operable in a high voltage range using polysilicon outdiffusion
US5079180A (en) * 1988-12-22 1992-01-07 Texas Instruments Incorporated Method of fabricating a raised source/drain transistor
US5668027A (en) * 1991-10-16 1997-09-16 Nippon Steel Semiconductor Corporation Method of manufacturing a MOS transistor semiconductor device
US5668037A (en) * 1995-10-06 1997-09-16 Micron Technology, Inc. Method of forming a resistor and integrated circuitry having a resistor construction
US5780920A (en) * 1995-10-06 1998-07-14 Micron Technology, Inc. Method of forming a resistor and integrated circuitry having a resistor construction
US5821150A (en) * 1995-10-06 1998-10-13 Micron Technology, Inc. Method of forming a resistor and integrated circuitry having a resistor construction
US5940712A (en) * 1995-10-06 1999-08-17 Micron Technology, Inc. Method of forming a resistor and integrated circuitry having a resistor construction
US5923078A (en) * 1996-07-11 1999-07-13 Micron Technology, Inc. Method of forming a resistor and integrated circuitry having a resistor construction
US6130137A (en) * 1997-10-20 2000-10-10 Micron Technology, Inc. Method of forming a resistor and integrated circuitry having a resistor construction

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