JPS57190353A - Manufacture of solid-state image pick-up device - Google Patents

Manufacture of solid-state image pick-up device

Info

Publication number
JPS57190353A
JPS57190353A JP56076192A JP7619281A JPS57190353A JP S57190353 A JPS57190353 A JP S57190353A JP 56076192 A JP56076192 A JP 56076192A JP 7619281 A JP7619281 A JP 7619281A JP S57190353 A JPS57190353 A JP S57190353A
Authority
JP
Japan
Prior art keywords
layer
gates
equalized
electrodes
electric charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56076192A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0522395B2 (enrdf_load_stackoverflow
Inventor
Akira Shimohashi
Yoshihiro Miyamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56076192A priority Critical patent/JPS57190353A/ja
Publication of JPS57190353A publication Critical patent/JPS57190353A/ja
Publication of JPH0522395B2 publication Critical patent/JPH0522395B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP56076192A 1981-05-19 1981-05-19 Manufacture of solid-state image pick-up device Granted JPS57190353A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56076192A JPS57190353A (en) 1981-05-19 1981-05-19 Manufacture of solid-state image pick-up device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56076192A JPS57190353A (en) 1981-05-19 1981-05-19 Manufacture of solid-state image pick-up device

Publications (2)

Publication Number Publication Date
JPS57190353A true JPS57190353A (en) 1982-11-22
JPH0522395B2 JPH0522395B2 (enrdf_load_stackoverflow) 1993-03-29

Family

ID=13598266

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56076192A Granted JPS57190353A (en) 1981-05-19 1981-05-19 Manufacture of solid-state image pick-up device

Country Status (1)

Country Link
JP (1) JPS57190353A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2578683A1 (fr) * 1985-03-08 1986-09-12 Thomson Csf Procede de fabrication d'une diode anti-eblouissement associee a un canal en surface, et systeme anti-eblouissement obtenu par ce procede
JPH04322760A (ja) * 1991-04-22 1992-11-12 Koito Mfg Co Ltd 塗装用治具

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5558581A (en) * 1978-10-26 1980-05-01 Fujitsu Ltd Infrared rays detector
JPS5646571A (en) * 1979-09-26 1981-04-27 Sony Corp Manufacture of solid image pickup element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5558581A (en) * 1978-10-26 1980-05-01 Fujitsu Ltd Infrared rays detector
JPS5646571A (en) * 1979-09-26 1981-04-27 Sony Corp Manufacture of solid image pickup element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2578683A1 (fr) * 1985-03-08 1986-09-12 Thomson Csf Procede de fabrication d'une diode anti-eblouissement associee a un canal en surface, et systeme anti-eblouissement obtenu par ce procede
US4710234A (en) * 1985-03-08 1987-12-01 Thomson--CSF Process for manufacturing an anti-blooming diode associated with a surface canal
JPH04322760A (ja) * 1991-04-22 1992-11-12 Koito Mfg Co Ltd 塗装用治具

Also Published As

Publication number Publication date
JPH0522395B2 (enrdf_load_stackoverflow) 1993-03-29

Similar Documents

Publication Publication Date Title
EP0858109A3 (en) Semiconductor memory device and method for manufacturing thereof
KR100973282B1 (ko) 나노 결정층을 구비하는 소노스 메모리 장치
JPS5681968A (en) Manufacture of semiconductor device
JPS56134757A (en) Complementary type mos semiconductor device and its manufacture
EP0851431A3 (en) Non-volatile memory and method for operating the same
TW428312B (en) A new scheme of capacitor and bit-line at same level and its fabrication method for 8F2 DRAM cell with minimum bit-line coupling noise
US7713875B2 (en) Variable salicide block for resistance equalization in an array
JPS57190353A (en) Manufacture of solid-state image pick-up device
JPH08167651A (ja) 半導体装置の側面コンタクトの形成方法
KR900005664B1 (ko) 반도체 기억장치
JPS5762557A (en) Solid state image pickup device and driving method therefor
JPS57186354A (en) Semiconductor memory storage and manufacture thereof
JPS55157253A (en) Mos semiconductor integrated circuit
CA1231445A (en) High speed merged charge memory
GB1576144A (en) Methods of manufacturing charge transfer devices
US8217447B2 (en) Flash memory device with a plurality of source plates
US6011282A (en) Charge coupled device with a buried channel two-phase driven two-layer electrode structure
JPS6425458A (en) Manufacture of dynamic ram
JPS56150857A (en) Dynamic memory device
JPS5787163A (en) Semiconductor memory storage
JPS56105666A (en) Semiconductor memory device
JPS57103349A (en) Semiconductor memory device
JPH04257233A (ja) 電荷転送装置
JPS57181276A (en) Solid-state image pickup device
JPS54133823A (en) Image sensor