JPS57188866A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57188866A
JPS57188866A JP56073546A JP7354681A JPS57188866A JP S57188866 A JPS57188866 A JP S57188866A JP 56073546 A JP56073546 A JP 56073546A JP 7354681 A JP7354681 A JP 7354681A JP S57188866 A JPS57188866 A JP S57188866A
Authority
JP
Japan
Prior art keywords
substrate
layer
capacity section
accumulated capacity
becoming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56073546A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0328071B2 (enrdf_load_stackoverflow
Inventor
Shinichiro Mitani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56073546A priority Critical patent/JPS57188866A/ja
Publication of JPS57188866A publication Critical patent/JPS57188866A/ja
Publication of JPH0328071B2 publication Critical patent/JPH0328071B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP56073546A 1981-05-18 1981-05-18 Manufacture of semiconductor device Granted JPS57188866A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56073546A JPS57188866A (en) 1981-05-18 1981-05-18 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56073546A JPS57188866A (en) 1981-05-18 1981-05-18 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57188866A true JPS57188866A (en) 1982-11-19
JPH0328071B2 JPH0328071B2 (enrdf_load_stackoverflow) 1991-04-17

Family

ID=13521334

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56073546A Granted JPS57188866A (en) 1981-05-18 1981-05-18 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57188866A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6022361A (ja) * 1983-07-19 1985-02-04 Nec Corp Ｍｉｓ型半導体記憶装置の製造方法
JPS60216577A (ja) * 1984-01-26 1985-10-30 ソーン、イーエムアイ、ノース、アメリカ、インコーポレーテッド 半導体メモリ構造体及びその製造方法
US4961165A (en) * 1987-11-17 1990-10-02 Fujitsu Limited Semiconductor memory device having a charge barrier layer for preventing soft error

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5333053A (en) * 1976-09-09 1978-03-28 Toshiba Corp Production of semiconductor device
JPS55141750A (en) * 1979-04-23 1980-11-05 Nec Corp Insulated gate type semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5333053A (en) * 1976-09-09 1978-03-28 Toshiba Corp Production of semiconductor device
JPS55141750A (en) * 1979-04-23 1980-11-05 Nec Corp Insulated gate type semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6022361A (ja) * 1983-07-19 1985-02-04 Nec Corp Ｍｉｓ型半導体記憶装置の製造方法
JPS60216577A (ja) * 1984-01-26 1985-10-30 ソーン、イーエムアイ、ノース、アメリカ、インコーポレーテッド 半導体メモリ構造体及びその製造方法
US4961165A (en) * 1987-11-17 1990-10-02 Fujitsu Limited Semiconductor memory device having a charge barrier layer for preventing soft error

Also Published As

Publication number Publication date
JPH0328071B2 (enrdf_load_stackoverflow) 1991-04-17

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