JPS57183039A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57183039A
JPS57183039A JP56066971A JP6697181A JPS57183039A JP S57183039 A JPS57183039 A JP S57183039A JP 56066971 A JP56066971 A JP 56066971A JP 6697181 A JP6697181 A JP 6697181A JP S57183039 A JPS57183039 A JP S57183039A
Authority
JP
Japan
Prior art keywords
substrate
heated
plane
nozzle
heating plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56066971A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6313338B2 (enExample
Inventor
Akio Mimura
Yasuhiro Mochizuki
Tokuo Watanabe
Tsutomu Yao
Tatsuya Kamei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56066971A priority Critical patent/JPS57183039A/ja
Publication of JPS57183039A publication Critical patent/JPS57183039A/ja
Publication of JPS6313338B2 publication Critical patent/JPS6313338B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thyristors (AREA)
JP56066971A 1981-05-06 1981-05-06 Manufacture of semiconductor device Granted JPS57183039A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56066971A JPS57183039A (en) 1981-05-06 1981-05-06 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56066971A JPS57183039A (en) 1981-05-06 1981-05-06 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57183039A true JPS57183039A (en) 1982-11-11
JPS6313338B2 JPS6313338B2 (enExample) 1988-03-25

Family

ID=13331412

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56066971A Granted JPS57183039A (en) 1981-05-06 1981-05-06 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57183039A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009005569A (ja) * 2007-06-25 2009-01-08 Seiko Precision Inc アクチュエータ及びコイル枠

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0216385U (enExample) * 1988-07-19 1990-02-01
JPH0329737U (enExample) * 1989-07-31 1991-03-25
JPH0399645U (enExample) * 1990-01-31 1991-10-18

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009005569A (ja) * 2007-06-25 2009-01-08 Seiko Precision Inc アクチュエータ及びコイル枠
US7750528B2 (en) 2007-06-25 2010-07-06 Seiko Precision Inc. Actuator and coil frame

Also Published As

Publication number Publication date
JPS6313338B2 (enExample) 1988-03-25

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