JPS57181152A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS57181152A JPS57181152A JP56065953A JP6595381A JPS57181152A JP S57181152 A JPS57181152 A JP S57181152A JP 56065953 A JP56065953 A JP 56065953A JP 6595381 A JP6595381 A JP 6595381A JP S57181152 A JPS57181152 A JP S57181152A
- Authority
- JP
- Japan
- Prior art keywords
- cell
- integrated circuit
- composing
- semiconductor integrated
- semiconductor chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/118—Masterslice integrated circuits
- H01L27/11898—Input and output buffer/driver structures
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56065953A JPS57181152A (en) | 1981-04-30 | 1981-04-30 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56065953A JPS57181152A (en) | 1981-04-30 | 1981-04-30 | Semiconductor integrated circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57181152A true JPS57181152A (en) | 1982-11-08 |
Family
ID=13301850
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56065953A Pending JPS57181152A (en) | 1981-04-30 | 1981-04-30 | Semiconductor integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57181152A (ja) |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57211248A (en) * | 1981-06-22 | 1982-12-25 | Hitachi Ltd | Semiconductor integrated circuit device |
JPS58115844A (ja) * | 1981-12-28 | 1983-07-09 | Fujitsu Ltd | 半導体装置 |
JPS58162048A (ja) * | 1982-03-19 | 1983-09-26 | Ricoh Co Ltd | セミカスタムlsi |
JPS5939060A (ja) * | 1982-08-27 | 1984-03-03 | Hitachi Ltd | 半導体集積回路装置 |
JPS5958840A (ja) * | 1982-09-28 | 1984-04-04 | Mitsubishi Electric Corp | 相補形mosゲ−トアレイ形半導体集積回路装置 |
JPS59124740A (ja) * | 1982-12-29 | 1984-07-18 | Fujitsu Ltd | 半導体装置 |
JPS59167122A (ja) * | 1983-03-11 | 1984-09-20 | Nec Corp | 入出力バツフア− |
JPS59193627A (ja) * | 1983-04-15 | 1984-11-02 | Hitachi Ltd | 半導体集積回路装置 |
JPS6027145A (ja) * | 1983-07-25 | 1985-02-12 | Hitachi Ltd | 半導体集積回路装置 |
JPS6035532A (ja) * | 1983-07-29 | 1985-02-23 | Fujitsu Ltd | マスタスライス集積回路装置 |
JPS60153143A (ja) * | 1984-01-20 | 1985-08-12 | Sanyo Electric Co Ltd | 半導体集積回路装置 |
JPS6146046A (ja) * | 1984-08-10 | 1986-03-06 | Hitachi Ltd | 半導体集積回路装置 |
JPS61218143A (ja) * | 1985-03-25 | 1986-09-27 | Hitachi Ltd | 半導体集積回路装置 |
JPH02216850A (ja) * | 1990-01-29 | 1990-08-29 | Hitachi Ltd | 半導体集積回路装置 |
FR2652679A1 (fr) * | 1989-10-03 | 1991-04-05 | Thomson Composants Microondes | Circuit electronique intermediaire prediffuse. |
US5281545A (en) * | 1982-12-10 | 1994-01-25 | Ricoh Company, Ltd. | Processes for manufacturing a semiconductor device |
US5512847A (en) * | 1983-01-31 | 1996-04-30 | Hitachi, Ltd. | BiCMOS tri-state output driver |
-
1981
- 1981-04-30 JP JP56065953A patent/JPS57181152A/ja active Pending
Cited By (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57211248A (en) * | 1981-06-22 | 1982-12-25 | Hitachi Ltd | Semiconductor integrated circuit device |
JPH0440866B2 (ja) * | 1981-06-22 | 1992-07-06 | Hitachi Seisakusho Kk | |
JPH0243343B2 (ja) * | 1981-12-28 | 1990-09-28 | ||
JPS58115844A (ja) * | 1981-12-28 | 1983-07-09 | Fujitsu Ltd | 半導体装置 |
JPS58162048A (ja) * | 1982-03-19 | 1983-09-26 | Ricoh Co Ltd | セミカスタムlsi |
JPS5939060A (ja) * | 1982-08-27 | 1984-03-03 | Hitachi Ltd | 半導体集積回路装置 |
JPH0546104B2 (ja) * | 1982-08-27 | 1993-07-13 | Hitachi Ltd | |
JPS5958840A (ja) * | 1982-09-28 | 1984-04-04 | Mitsubishi Electric Corp | 相補形mosゲ−トアレイ形半導体集積回路装置 |
US5281545A (en) * | 1982-12-10 | 1994-01-25 | Ricoh Company, Ltd. | Processes for manufacturing a semiconductor device |
JPS59124740A (ja) * | 1982-12-29 | 1984-07-18 | Fujitsu Ltd | 半導体装置 |
US5512847A (en) * | 1983-01-31 | 1996-04-30 | Hitachi, Ltd. | BiCMOS tri-state output driver |
JPS59167122A (ja) * | 1983-03-11 | 1984-09-20 | Nec Corp | 入出力バツフア− |
JPS59193627A (ja) * | 1983-04-15 | 1984-11-02 | Hitachi Ltd | 半導体集積回路装置 |
JPS6027145A (ja) * | 1983-07-25 | 1985-02-12 | Hitachi Ltd | 半導体集積回路装置 |
JPH0479136B2 (ja) * | 1983-07-25 | 1992-12-15 | Hitachi Ltd | |
US4682202A (en) * | 1983-07-29 | 1987-07-21 | Fujitsu Limited | Master slice IC device |
JPS6035532A (ja) * | 1983-07-29 | 1985-02-23 | Fujitsu Ltd | マスタスライス集積回路装置 |
JPH0519825B2 (ja) * | 1984-01-20 | 1993-03-17 | Sanyo Electric Co | |
JPS60153143A (ja) * | 1984-01-20 | 1985-08-12 | Sanyo Electric Co Ltd | 半導体集積回路装置 |
JPS6146046A (ja) * | 1984-08-10 | 1986-03-06 | Hitachi Ltd | 半導体集積回路装置 |
JPS61218143A (ja) * | 1985-03-25 | 1986-09-27 | Hitachi Ltd | 半導体集積回路装置 |
FR2652679A1 (fr) * | 1989-10-03 | 1991-04-05 | Thomson Composants Microondes | Circuit electronique intermediaire prediffuse. |
JPH02216850A (ja) * | 1990-01-29 | 1990-08-29 | Hitachi Ltd | 半導体集積回路装置 |
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