JPS53113481A - Mos type field effect transistor - Google Patents

Mos type field effect transistor

Info

Publication number
JPS53113481A
JPS53113481A JP2823877A JP2823877A JPS53113481A JP S53113481 A JPS53113481 A JP S53113481A JP 2823877 A JP2823877 A JP 2823877A JP 2823877 A JP2823877 A JP 2823877A JP S53113481 A JPS53113481 A JP S53113481A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
type field
mos type
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2823877A
Other languages
Japanese (ja)
Inventor
Masamizu Konaka
Kenji Natori
Isao Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP2823877A priority Critical patent/JPS53113481A/en
Publication of JPS53113481A publication Critical patent/JPS53113481A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To avert the degradation in characteristics owing to the reduced length of channels and increase the scale of integration by disposing the source regions and drain regions near channel regions in serration.
COPYRIGHT: (C)1978,JPO&Japio
JP2823877A 1977-03-15 1977-03-15 Mos type field effect transistor Pending JPS53113481A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2823877A JPS53113481A (en) 1977-03-15 1977-03-15 Mos type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2823877A JPS53113481A (en) 1977-03-15 1977-03-15 Mos type field effect transistor

Publications (1)

Publication Number Publication Date
JPS53113481A true JPS53113481A (en) 1978-10-03

Family

ID=12243005

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2823877A Pending JPS53113481A (en) 1977-03-15 1977-03-15 Mos type field effect transistor

Country Status (1)

Country Link
JP (1) JPS53113481A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7332772B2 (en) * 2005-06-29 2008-02-19 Hynix Semiconductor Inc. Semiconductor device having a recessed gate and asymmetric dopant regions and method of manufacturing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7332772B2 (en) * 2005-06-29 2008-02-19 Hynix Semiconductor Inc. Semiconductor device having a recessed gate and asymmetric dopant regions and method of manufacturing the same
US7700442B2 (en) 2005-06-29 2010-04-20 Hynix Semiconductor Inc. Semiconductor device having a recessed gate and asymmetric dopant regions and method of manufacturing the same

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