JPS53113481A - Mos type field effect transistor - Google Patents
Mos type field effect transistorInfo
- Publication number
- JPS53113481A JPS53113481A JP2823877A JP2823877A JPS53113481A JP S53113481 A JPS53113481 A JP S53113481A JP 2823877 A JP2823877 A JP 2823877A JP 2823877 A JP2823877 A JP 2823877A JP S53113481 A JPS53113481 A JP S53113481A
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- effect transistor
- type field
- mos type
- regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To avert the degradation in characteristics owing to the reduced length of channels and increase the scale of integration by disposing the source regions and drain regions near channel regions in serration.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2823877A JPS53113481A (en) | 1977-03-15 | 1977-03-15 | Mos type field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2823877A JPS53113481A (en) | 1977-03-15 | 1977-03-15 | Mos type field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS53113481A true JPS53113481A (en) | 1978-10-03 |
Family
ID=12243005
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2823877A Pending JPS53113481A (en) | 1977-03-15 | 1977-03-15 | Mos type field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53113481A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7332772B2 (en) * | 2005-06-29 | 2008-02-19 | Hynix Semiconductor Inc. | Semiconductor device having a recessed gate and asymmetric dopant regions and method of manufacturing the same |
-
1977
- 1977-03-15 JP JP2823877A patent/JPS53113481A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7332772B2 (en) * | 2005-06-29 | 2008-02-19 | Hynix Semiconductor Inc. | Semiconductor device having a recessed gate and asymmetric dopant regions and method of manufacturing the same |
US7700442B2 (en) | 2005-06-29 | 2010-04-20 | Hynix Semiconductor Inc. | Semiconductor device having a recessed gate and asymmetric dopant regions and method of manufacturing the same |
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