JPS57139954A - Master-sliced large scale integrated circuit - Google Patents

Master-sliced large scale integrated circuit

Info

Publication number
JPS57139954A
JPS57139954A JP56024912A JP2491281A JPS57139954A JP S57139954 A JPS57139954 A JP S57139954A JP 56024912 A JP56024912 A JP 56024912A JP 2491281 A JP2491281 A JP 2491281A JP S57139954 A JPS57139954 A JP S57139954A
Authority
JP
Japan
Prior art keywords
channel
input
transistors
sides
master
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56024912A
Other languages
Japanese (ja)
Other versions
JPH0154861B2 (en
Inventor
Takeo Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56024912A priority Critical patent/JPS57139954A/en
Publication of JPS57139954A publication Critical patent/JPS57139954A/en
Publication of JPH0154861B2 publication Critical patent/JPH0154861B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11898—Input and output buffer/driver structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To suppress a launch-up phenomenon by forming the transistors of the same conduction type channel in the mutually adjacent regions of a plurality of input/output blocks around a chip and the transistors of different conduction type channels at both sides of a pad and an input protective resistor in each block. CONSTITUTION:The P channel transistors (TR) are formed at the left sides of the pads 103 and the input protective resistors 201, and the N channel TRs at the right sides. The N channel TRs are shaped at the left sides of the pads 103 and the P channel TRs at the right sides in the adjacent input/output blocks 404a, and arranged so as to form mirror surface symmetry to the boundary lines a-a' of adjacent blocks. Accordingly, the generation of the launch-up phenomenon is suppressed without increasing the size of the chip.
JP56024912A 1981-02-24 1981-02-24 Master-sliced large scale integrated circuit Granted JPS57139954A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56024912A JPS57139954A (en) 1981-02-24 1981-02-24 Master-sliced large scale integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56024912A JPS57139954A (en) 1981-02-24 1981-02-24 Master-sliced large scale integrated circuit

Publications (2)

Publication Number Publication Date
JPS57139954A true JPS57139954A (en) 1982-08-30
JPH0154861B2 JPH0154861B2 (en) 1989-11-21

Family

ID=12151379

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56024912A Granted JPS57139954A (en) 1981-02-24 1981-02-24 Master-sliced large scale integrated circuit

Country Status (1)

Country Link
JP (1) JPS57139954A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5941852A (en) * 1982-06-24 1984-03-08 ストレイジ・テクノロジ−・パ−トナ−ズ Integrated circuit chip
JPS5958840A (en) * 1982-09-28 1984-04-04 Mitsubishi Electric Corp Complementary mos gate array type semiconductor integrated circuit device
JPS6466950A (en) * 1987-09-07 1989-03-13 Nec Corp Integrated circuit device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5941852A (en) * 1982-06-24 1984-03-08 ストレイジ・テクノロジ−・パ−トナ−ズ Integrated circuit chip
JPS5958840A (en) * 1982-09-28 1984-04-04 Mitsubishi Electric Corp Complementary mos gate array type semiconductor integrated circuit device
JPS6466950A (en) * 1987-09-07 1989-03-13 Nec Corp Integrated circuit device

Also Published As

Publication number Publication date
JPH0154861B2 (en) 1989-11-21

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