JPS57180186A - Semiconductor device and manufacturing method therefor - Google Patents
Semiconductor device and manufacturing method thereforInfo
- Publication number
- JPS57180186A JPS57180186A JP6554881A JP6554881A JPS57180186A JP S57180186 A JPS57180186 A JP S57180186A JP 6554881 A JP6554881 A JP 6554881A JP 6554881 A JP6554881 A JP 6554881A JP S57180186 A JPS57180186 A JP S57180186A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gaas
- electron
- electrodes
- vicinity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000009825 accumulation Methods 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 125000005842 heteroatom Chemical group 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 abstract 1
- 229910017401 Au—Ge Inorganic materials 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 230000001276 controlling effect Effects 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/0883—Combination of depletion and enhancement field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/095—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being Schottky barrier gate field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6554881A JPS57180186A (en) | 1981-04-30 | 1981-04-30 | Semiconductor device and manufacturing method therefor |
| DE8282302107T DE3279795D1 (en) | 1981-04-23 | 1982-04-23 | High electron mobility semiconductor device |
| US06/371,465 US4663643A (en) | 1981-04-23 | 1982-04-23 | Semiconductor device and process for producing the same |
| EP82302107A EP0064370B1 (en) | 1981-04-23 | 1982-04-23 | High electron mobility semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6554881A JPS57180186A (en) | 1981-04-30 | 1981-04-30 | Semiconductor device and manufacturing method therefor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57180186A true JPS57180186A (en) | 1982-11-06 |
| JPS6354228B2 JPS6354228B2 (ja) | 1988-10-27 |
Family
ID=13290171
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6554881A Granted JPS57180186A (en) | 1981-04-23 | 1981-04-30 | Semiconductor device and manufacturing method therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57180186A (ja) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5870573A (ja) * | 1981-10-22 | 1983-04-27 | Nec Corp | 化合物半導体電界効果トランジスタ |
| JPS60254669A (ja) * | 1984-05-30 | 1985-12-16 | Nec Corp | 半導体装置 |
| JPS61113282A (ja) * | 1984-11-08 | 1986-05-31 | Matsushita Electronics Corp | 電解効果トランジスタ |
| JPH01130572A (ja) * | 1987-11-17 | 1989-05-23 | Agency Of Ind Science & Technol | 化合物半導体装置の製造方法 |
| EP1865561A1 (en) * | 2006-06-07 | 2007-12-12 | Interuniversitair Microelektronica Centrum (IMEC) | An enhancement mode field effect device and the method of production thereof |
| US8399911B2 (en) | 2006-06-07 | 2013-03-19 | Imec | Enhancement mode field effect device and the method of production thereof |
-
1981
- 1981-04-30 JP JP6554881A patent/JPS57180186A/ja active Granted
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5870573A (ja) * | 1981-10-22 | 1983-04-27 | Nec Corp | 化合物半導体電界効果トランジスタ |
| JPH0328821B2 (ja) * | 1981-10-22 | 1991-04-22 | Nippon Electric Co | |
| JPS60254669A (ja) * | 1984-05-30 | 1985-12-16 | Nec Corp | 半導体装置 |
| JPS61113282A (ja) * | 1984-11-08 | 1986-05-31 | Matsushita Electronics Corp | 電解効果トランジスタ |
| JPH01130572A (ja) * | 1987-11-17 | 1989-05-23 | Agency Of Ind Science & Technol | 化合物半導体装置の製造方法 |
| JPH0543292B2 (ja) * | 1987-11-17 | 1993-07-01 | Kogyo Gijutsuin | |
| EP1865561A1 (en) * | 2006-06-07 | 2007-12-12 | Interuniversitair Microelektronica Centrum (IMEC) | An enhancement mode field effect device and the method of production thereof |
| US8399911B2 (en) | 2006-06-07 | 2013-03-19 | Imec | Enhancement mode field effect device and the method of production thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6354228B2 (ja) | 1988-10-27 |
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