JPS57180175A - Manufacturing method for semiconductor device - Google Patents

Manufacturing method for semiconductor device

Info

Publication number
JPS57180175A
JPS57180175A JP56065546A JP6554681A JPS57180175A JP S57180175 A JPS57180175 A JP S57180175A JP 56065546 A JP56065546 A JP 56065546A JP 6554681 A JP6554681 A JP 6554681A JP S57180175 A JPS57180175 A JP S57180175A
Authority
JP
Japan
Prior art keywords
sih4
sio2
pcl3
pocl3
och3
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56065546A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0154866B2 (enExample
Inventor
Hideo Ishii
Takanori Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56065546A priority Critical patent/JPS57180175A/ja
Publication of JPS57180175A publication Critical patent/JPS57180175A/ja
Publication of JPH0154866B2 publication Critical patent/JPH0154866B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP56065546A 1981-04-30 1981-04-30 Manufacturing method for semiconductor device Granted JPS57180175A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56065546A JPS57180175A (en) 1981-04-30 1981-04-30 Manufacturing method for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56065546A JPS57180175A (en) 1981-04-30 1981-04-30 Manufacturing method for semiconductor device

Publications (2)

Publication Number Publication Date
JPS57180175A true JPS57180175A (en) 1982-11-06
JPH0154866B2 JPH0154866B2 (enExample) 1989-11-21

Family

ID=13290117

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56065546A Granted JPS57180175A (en) 1981-04-30 1981-04-30 Manufacturing method for semiconductor device

Country Status (1)

Country Link
JP (1) JPS57180175A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5096856A (en) * 1988-03-01 1992-03-17 Texas Instruments Incorporated In-situ doped silicon using tertiary butyl phosphine
US5198387A (en) * 1989-12-01 1993-03-30 Texas Instruments Incorporated Method and apparatus for in-situ doping of deposited silicon

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5096856A (en) * 1988-03-01 1992-03-17 Texas Instruments Incorporated In-situ doped silicon using tertiary butyl phosphine
US5198387A (en) * 1989-12-01 1993-03-30 Texas Instruments Incorporated Method and apparatus for in-situ doping of deposited silicon

Also Published As

Publication number Publication date
JPH0154866B2 (enExample) 1989-11-21

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