JPH0154866B2 - - Google Patents

Info

Publication number
JPH0154866B2
JPH0154866B2 JP56065546A JP6554681A JPH0154866B2 JP H0154866 B2 JPH0154866 B2 JP H0154866B2 JP 56065546 A JP56065546 A JP 56065546A JP 6554681 A JP6554681 A JP 6554681A JP H0154866 B2 JPH0154866 B2 JP H0154866B2
Authority
JP
Japan
Prior art keywords
monosilane
insulating film
gate insulating
silicon dioxide
sih
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56065546A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57180175A (en
Inventor
Hideo Ishii
Takanori Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56065546A priority Critical patent/JPS57180175A/ja
Publication of JPS57180175A publication Critical patent/JPS57180175A/ja
Publication of JPH0154866B2 publication Critical patent/JPH0154866B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP56065546A 1981-04-30 1981-04-30 Manufacturing method for semiconductor device Granted JPS57180175A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56065546A JPS57180175A (en) 1981-04-30 1981-04-30 Manufacturing method for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56065546A JPS57180175A (en) 1981-04-30 1981-04-30 Manufacturing method for semiconductor device

Publications (2)

Publication Number Publication Date
JPS57180175A JPS57180175A (en) 1982-11-06
JPH0154866B2 true JPH0154866B2 (enExample) 1989-11-21

Family

ID=13290117

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56065546A Granted JPS57180175A (en) 1981-04-30 1981-04-30 Manufacturing method for semiconductor device

Country Status (1)

Country Link
JP (1) JPS57180175A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5096856A (en) * 1988-03-01 1992-03-17 Texas Instruments Incorporated In-situ doped silicon using tertiary butyl phosphine
US5198387A (en) * 1989-12-01 1993-03-30 Texas Instruments Incorporated Method and apparatus for in-situ doping of deposited silicon

Also Published As

Publication number Publication date
JPS57180175A (en) 1982-11-06

Similar Documents

Publication Publication Date Title
EP0617461B1 (en) Oxynitride dielectric process for IC manufacture
EP0363944B1 (en) Method of manufacturing a semiconductor device having a silicon carbide layer
KR100289859B1 (ko) 반도체장치의제조방법
US4442449A (en) Binary germanium-silicon interconnect and electrode structure for integrated circuits
KR100752559B1 (ko) 유전체막의 형성 방법
US4740483A (en) Selective LPCVD tungsten deposition by nitridation of a dielectric
JP2947828B2 (ja) 半導体装置の製造方法
JPH06196702A (ja) 薄膜トランジスタの製造方法
US4102715A (en) Method for diffusing an impurity into a semiconductor body
JPH0154866B2 (enExample)
US3614829A (en) Method of forming high stability self-registered field effect transistors
GB1461943A (en) Semi-conductor devices
KR880013232A (ko) 반도체장치 및 그 제조방법
JPH0258786B2 (enExample)
JP2812166B2 (ja) 半導体装置の製造方法
JPH10125617A (ja) 半導体装置の製造方法
JPS626348B2 (enExample)
EP0024094B1 (en) Method of producing semiconductor devices
JPH0255416A (ja) 半導体装置
JPS6120154B2 (enExample)
KR100472855B1 (ko) 반도체소자의다결정실리콘박막제조방법
JPH0748495B2 (ja) 半導体装置の製造方法
JP2973011B2 (ja) 半導体素子分離領域の形成方法
JPS61131434A (ja) 半導体装置の製造方法
JPH0555198A (ja) 半導体装置の製造方法