JPS57180123A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57180123A
JPS57180123A JP6571981A JP6571981A JPS57180123A JP S57180123 A JPS57180123 A JP S57180123A JP 6571981 A JP6571981 A JP 6571981A JP 6571981 A JP6571981 A JP 6571981A JP S57180123 A JPS57180123 A JP S57180123A
Authority
JP
Japan
Prior art keywords
film
layer
wiring
recess part
discontinuity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6571981A
Other languages
English (en)
Other versions
JPH0335827B2 (ja
Inventor
Yoshihiko Higa
Akira Takei
Takashi Mitsuida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6571981A priority Critical patent/JPS57180123A/ja
Publication of JPS57180123A publication Critical patent/JPS57180123A/ja
Publication of JPH0335827B2 publication Critical patent/JPH0335827B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP6571981A 1981-04-29 1981-04-29 Manufacture of semiconductor device Granted JPS57180123A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6571981A JPS57180123A (en) 1981-04-29 1981-04-29 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6571981A JPS57180123A (en) 1981-04-29 1981-04-29 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57180123A true JPS57180123A (en) 1982-11-06
JPH0335827B2 JPH0335827B2 (ja) 1991-05-29

Family

ID=13295104

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6571981A Granted JPS57180123A (en) 1981-04-29 1981-04-29 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57180123A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5121724A (en) * 1989-11-16 1992-06-16 Nissan Motor Company, Ltd. Multi-cylinder internal combustion engine with individual port throttles upstream of intake valves

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50107877A (ja) * 1974-01-30 1975-08-25
JPS511586A (ja) * 1974-06-26 1976-01-08 Toyo Kogyo Co Kariugomutokinzokutono setsuchakuhoho

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50107877A (ja) * 1974-01-30 1975-08-25
JPS511586A (ja) * 1974-06-26 1976-01-08 Toyo Kogyo Co Kariugomutokinzokutono setsuchakuhoho

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5121724A (en) * 1989-11-16 1992-06-16 Nissan Motor Company, Ltd. Multi-cylinder internal combustion engine with individual port throttles upstream of intake valves

Also Published As

Publication number Publication date
JPH0335827B2 (ja) 1991-05-29

Similar Documents

Publication Publication Date Title
JPS5621332A (en) Manufacture of semiconductor device
JPS5664453A (en) Manufacture of semiconductor device
JPS57180123A (en) Manufacture of semiconductor device
JPS57154855A (en) Manufacture of semiconductor device
JPS5688358A (en) Manufacture of semiconductor device
JPS5772333A (en) Manufacture of semiconductor device
JPS56125856A (en) Manufacture of semiconductor device
JPS5766651A (en) Manufacture of semiconductor device
JPS52124860A (en) Electrode formation method for semiconductor devices
JPS57167659A (en) Manufacture of semiconductor device
JPS56148825A (en) Manufacture of semiconductor device
JPS5732635A (en) Production of semiconductor device
JPS57155731A (en) Formation of pattern
JPS5743431A (en) Manufacture of semiconductor device
JPS56110229A (en) Manufacture of semiconductor device
JPS5679446A (en) Production of semiconductor device
JPS5568674A (en) Fabrication of charge coupled device
JPS57180176A (en) Manufacturing method for semiconductor device
JPS57194523A (en) Manufacture of semiconductor device
JPS57202754A (en) Manufacture of semiconductor device
JPS57102047A (en) Manufacture of amorphous semiconductor device
JPS57118641A (en) Lifting-off method
JPS5497365A (en) Semiconductor device and its manufacture
JPS56142654A (en) Manufacture of semiconductor device
JPS56131932A (en) Manufacture of semiconductor device