JPS5497365A - Semiconductor device and its manufacture - Google Patents
Semiconductor device and its manufactureInfo
- Publication number
- JPS5497365A JPS5497365A JP488478A JP488478A JPS5497365A JP S5497365 A JPS5497365 A JP S5497365A JP 488478 A JP488478 A JP 488478A JP 488478 A JP488478 A JP 488478A JP S5497365 A JPS5497365 A JP S5497365A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- photo resist
- gate wiring
- manufacture
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To make the capacity of a parallel plate extremely small, and also to prevent a semiconductor substrate crystal from being damaged in a manufacture process by insulating electrodes, intersecting together, mutually by a straddle-line bridge without forming an insulating film.
CONSTITUTION: Inside of the semiconductor substrate, source electrode 1, drain electrode, gate electrode, and subordinate gate electrode pad 4 are formed. At the part which intersects the gate wiring electrode part on source electrode 1, photo resist 9 is formed through photomechanical processing. Next, gate wiring electrode 7 is formed with the part covered with photo resist 9. Then, removing photo resist 9 by an etching solution forms gap part 10. Consequently, the straddle-line bridge of gate wiring electrode 7 is formed on electrode 1 via gap part 10. In this method, since the photo resist is used to insulate electrodes mutually, its manufacture is simple, the crystal layer will not be damaged during a thermal treatment, and the capacity of the parallel plate can be made extremely small. Although a photo resist is used in this manufacturing method, other high-molecular resin may be used.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP488478A JPS5497365A (en) | 1978-01-19 | 1978-01-19 | Semiconductor device and its manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP488478A JPS5497365A (en) | 1978-01-19 | 1978-01-19 | Semiconductor device and its manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5497365A true JPS5497365A (en) | 1979-08-01 |
Family
ID=11596095
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP488478A Pending JPS5497365A (en) | 1978-01-19 | 1978-01-19 | Semiconductor device and its manufacture |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5497365A (en) |
-
1978
- 1978-01-19 JP JP488478A patent/JPS5497365A/en active Pending
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