JPS5497365A - Semiconductor device and its manufacture - Google Patents

Semiconductor device and its manufacture

Info

Publication number
JPS5497365A
JPS5497365A JP488478A JP488478A JPS5497365A JP S5497365 A JPS5497365 A JP S5497365A JP 488478 A JP488478 A JP 488478A JP 488478 A JP488478 A JP 488478A JP S5497365 A JPS5497365 A JP S5497365A
Authority
JP
Japan
Prior art keywords
electrode
photo resist
gate wiring
manufacture
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP488478A
Other languages
Japanese (ja)
Inventor
Yasuro Mitsui
Masaaki Nakatani
Shigeru Mitsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP488478A priority Critical patent/JPS5497365A/en
Publication of JPS5497365A publication Critical patent/JPS5497365A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To make the capacity of a parallel plate extremely small, and also to prevent a semiconductor substrate crystal from being damaged in a manufacture process by insulating electrodes, intersecting together, mutually by a straddle-line bridge without forming an insulating film.
CONSTITUTION: Inside of the semiconductor substrate, source electrode 1, drain electrode, gate electrode, and subordinate gate electrode pad 4 are formed. At the part which intersects the gate wiring electrode part on source electrode 1, photo resist 9 is formed through photomechanical processing. Next, gate wiring electrode 7 is formed with the part covered with photo resist 9. Then, removing photo resist 9 by an etching solution forms gap part 10. Consequently, the straddle-line bridge of gate wiring electrode 7 is formed on electrode 1 via gap part 10. In this method, since the photo resist is used to insulate electrodes mutually, its manufacture is simple, the crystal layer will not be damaged during a thermal treatment, and the capacity of the parallel plate can be made extremely small. Although a photo resist is used in this manufacturing method, other high-molecular resin may be used.
COPYRIGHT: (C)1979,JPO&Japio
JP488478A 1978-01-19 1978-01-19 Semiconductor device and its manufacture Pending JPS5497365A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP488478A JPS5497365A (en) 1978-01-19 1978-01-19 Semiconductor device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP488478A JPS5497365A (en) 1978-01-19 1978-01-19 Semiconductor device and its manufacture

Publications (1)

Publication Number Publication Date
JPS5497365A true JPS5497365A (en) 1979-08-01

Family

ID=11596095

Family Applications (1)

Application Number Title Priority Date Filing Date
JP488478A Pending JPS5497365A (en) 1978-01-19 1978-01-19 Semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPS5497365A (en)

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