JPS5683035A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5683035A
JPS5683035A JP16107079A JP16107079A JPS5683035A JP S5683035 A JPS5683035 A JP S5683035A JP 16107079 A JP16107079 A JP 16107079A JP 16107079 A JP16107079 A JP 16107079A JP S5683035 A JPS5683035 A JP S5683035A
Authority
JP
Japan
Prior art keywords
openings
resist
layer
mask
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16107079A
Other languages
Japanese (ja)
Inventor
Nobuyasu Taino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP16107079A priority Critical patent/JPS5683035A/en
Publication of JPS5683035A publication Critical patent/JPS5683035A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Abstract

PURPOSE:To prevent the trouble by breaking of electrode conductor of the semiconductor device by a method wherein a resist layer used to form openings for etching in a protective layer is heated to deform, and narrower openings are formed using the thermally deformed resist as a mask. CONSTITUTION:A protective film layer 8, a resist layer 18 are formed in order on the semiconductor substrate 1, and openings 15, 16 not reaching to the substrate are formed using the layer 18 as a mask. Then the surface of the resist is made to soften by heating process to make the resist to be exposed on the circumferential surface of the openings in the protective film layer. Narrow openings reaching to the substrate 1 are formed using the newly formed resist layer 18' as a mask, and Al is evaporated to form electrodes on the source, drain regions 2, 3. Therefore because the openings having step part can be formed by performing heating process during the etching process, so that trouble by the breaking of electrode conductor to be followed to the enlargement of depth of the openings can be prevented.
JP16107079A 1979-12-11 1979-12-11 Manufacture of semiconductor device Pending JPS5683035A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16107079A JPS5683035A (en) 1979-12-11 1979-12-11 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16107079A JPS5683035A (en) 1979-12-11 1979-12-11 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5683035A true JPS5683035A (en) 1981-07-07

Family

ID=15728042

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16107079A Pending JPS5683035A (en) 1979-12-11 1979-12-11 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5683035A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51136289A (en) * 1975-05-21 1976-11-25 Toshiba Corp Semi-conductor producing

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51136289A (en) * 1975-05-21 1976-11-25 Toshiba Corp Semi-conductor producing

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