JPS5671941A - Manufacture of mos type semiconductor device - Google Patents

Manufacture of mos type semiconductor device

Info

Publication number
JPS5671941A
JPS5671941A JP14979979A JP14979979A JPS5671941A JP S5671941 A JPS5671941 A JP S5671941A JP 14979979 A JP14979979 A JP 14979979A JP 14979979 A JP14979979 A JP 14979979A JP S5671941 A JPS5671941 A JP S5671941A
Authority
JP
Japan
Prior art keywords
film
semiconductor layer
resist
manufacture
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14979979A
Other languages
Japanese (ja)
Inventor
Toshiaki Ogata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP14979979A priority Critical patent/JPS5671941A/en
Publication of JPS5671941A publication Critical patent/JPS5671941A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To ultraminiaturize an IC through a process consisting of, when the electrode wiring of an MOSIC is made, depositing a Ti film on a semiconductor layer, providing a photoresist mask and making Furon-gas plasma etching of the layer heated to a lower temperature than the softening point of the resist. CONSTITUTION:For making the electrode wiring of an MOSIC, a Ti film is etched using a photoresist mask. Then, the film is post-baked using a positive type resist at 1,200 deg.C, insepected, and formed into a given pattern through Furon-gas plasma etching while a semiconductor layer is heated about 90 deg.C, a lower temperature than the softening point of the resist. Thereby, the central and peripheral portions of the semiconductor layer do not differ in Ti film etching characteristic, a fine pattern is obtained and no punch-through phenomenon occurs.
JP14979979A 1979-11-19 1979-11-19 Manufacture of mos type semiconductor device Pending JPS5671941A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14979979A JPS5671941A (en) 1979-11-19 1979-11-19 Manufacture of mos type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14979979A JPS5671941A (en) 1979-11-19 1979-11-19 Manufacture of mos type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5671941A true JPS5671941A (en) 1981-06-15

Family

ID=15482961

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14979979A Pending JPS5671941A (en) 1979-11-19 1979-11-19 Manufacture of mos type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5671941A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5347664A (en) * 1976-10-12 1978-04-28 Mitsubishi Electric Corp Position indicating system for elevator

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5347664A (en) * 1976-10-12 1978-04-28 Mitsubishi Electric Corp Position indicating system for elevator

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