JPS57178370A - Insulating gate type field-effect transistor - Google Patents

Insulating gate type field-effect transistor

Info

Publication number
JPS57178370A
JPS57178370A JP56062495A JP6249581A JPS57178370A JP S57178370 A JPS57178370 A JP S57178370A JP 56062495 A JP56062495 A JP 56062495A JP 6249581 A JP6249581 A JP 6249581A JP S57178370 A JPS57178370 A JP S57178370A
Authority
JP
Japan
Prior art keywords
lead
gate
electrode row
drain
pellet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56062495A
Other languages
Japanese (ja)
Inventor
Hideshi Ito
Takeaki Okabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56062495A priority Critical patent/JPS57178370A/en
Publication of JPS57178370A publication Critical patent/JPS57178370A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To improve a high-frequency characteristic by forming a gate electrode row and a drain electrode row along the upper sections of both side edges of a pellet and projecting a gate lead and a drain lead at both sides of a package. CONSTITUTION:A heat sink 1 made of copper is fitted at the centrial section of a header 2, and the pellet 3 is fixed at the center of the upper surface of the heat sink 1. The gate electrode row 9 and the drain electrode row 10 are formed to the upper sections of a pair of the side edges of the pellet 3, and each connected to the gate lead 4 and the drain lead 6 through wires 8. Source electrodes 7 are shaped among the gate electrodes, and connected to the heat sink 1 through wires 8. The gate lead 4 and the drain lead 6 are projected in the opposite direction so as not to contact with the header 2. The high-frequency characteristic is excellent because the lengths of the leads 4, 6 are short and they are projected in the opposite direction with each other.
JP56062495A 1981-04-27 1981-04-27 Insulating gate type field-effect transistor Pending JPS57178370A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56062495A JPS57178370A (en) 1981-04-27 1981-04-27 Insulating gate type field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56062495A JPS57178370A (en) 1981-04-27 1981-04-27 Insulating gate type field-effect transistor

Publications (1)

Publication Number Publication Date
JPS57178370A true JPS57178370A (en) 1982-11-02

Family

ID=13201798

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56062495A Pending JPS57178370A (en) 1981-04-27 1981-04-27 Insulating gate type field-effect transistor

Country Status (1)

Country Link
JP (1) JPS57178370A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5198964A (en) * 1990-09-27 1993-03-30 Hitachi, Ltd. Packaged semiconductor device and electronic device module including same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5198964A (en) * 1990-09-27 1993-03-30 Hitachi, Ltd. Packaged semiconductor device and electronic device module including same

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