JPS57177568A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57177568A
JPS57177568A JP6199881A JP6199881A JPS57177568A JP S57177568 A JPS57177568 A JP S57177568A JP 6199881 A JP6199881 A JP 6199881A JP 6199881 A JP6199881 A JP 6199881A JP S57177568 A JPS57177568 A JP S57177568A
Authority
JP
Japan
Prior art keywords
film
gate
type
oxide film
adhere
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6199881A
Other languages
English (en)
Other versions
JPH0119274B2 (ja
Inventor
Hiroki Muta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6199881A priority Critical patent/JPS57177568A/ja
Publication of JPS57177568A publication Critical patent/JPS57177568A/ja
Publication of JPH0119274B2 publication Critical patent/JPH0119274B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/80Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Element Separation (AREA)
  • Junction Field-Effect Transistors (AREA)
JP6199881A 1981-04-24 1981-04-24 Manufacture of semiconductor device Granted JPS57177568A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6199881A JPS57177568A (en) 1981-04-24 1981-04-24 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6199881A JPS57177568A (en) 1981-04-24 1981-04-24 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57177568A true JPS57177568A (en) 1982-11-01
JPH0119274B2 JPH0119274B2 (ja) 1989-04-11

Family

ID=13187381

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6199881A Granted JPS57177568A (en) 1981-04-24 1981-04-24 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57177568A (ja)

Also Published As

Publication number Publication date
JPH0119274B2 (ja) 1989-04-11

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