JPS57176773A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS57176773A
JPS57176773A JP56061710A JP6171081A JPS57176773A JP S57176773 A JPS57176773 A JP S57176773A JP 56061710 A JP56061710 A JP 56061710A JP 6171081 A JP6171081 A JP 6171081A JP S57176773 A JPS57176773 A JP S57176773A
Authority
JP
Japan
Prior art keywords
layer
control electrode
electron
generated
electron supplying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56061710A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6353711B2 (enrdf_load_stackoverflow
Inventor
Takashi Mimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56061710A priority Critical patent/JPS57176773A/ja
Priority to US06/371,465 priority patent/US4663643A/en
Priority to EP82302107A priority patent/EP0064370B1/en
Priority to DE8282302107T priority patent/DE3279795D1/de
Publication of JPS57176773A publication Critical patent/JPS57176773A/ja
Publication of JPS6353711B2 publication Critical patent/JPS6353711B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/84—Combinations of enhancement-mode IGFETs and depletion-mode IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/86—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of Schottky-barrier gate FETs

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Recrystallisation Techniques (AREA)
  • Bipolar Transistors (AREA)
JP56061710A 1981-04-23 1981-04-23 Semiconductor device and manufacture thereof Granted JPS57176773A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP56061710A JPS57176773A (en) 1981-04-23 1981-04-23 Semiconductor device and manufacture thereof
US06/371,465 US4663643A (en) 1981-04-23 1982-04-23 Semiconductor device and process for producing the same
EP82302107A EP0064370B1 (en) 1981-04-23 1982-04-23 High electron mobility semiconductor device
DE8282302107T DE3279795D1 (en) 1981-04-23 1982-04-23 High electron mobility semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56061710A JPS57176773A (en) 1981-04-23 1981-04-23 Semiconductor device and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS57176773A true JPS57176773A (en) 1982-10-30
JPS6353711B2 JPS6353711B2 (enrdf_load_stackoverflow) 1988-10-25

Family

ID=13179052

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56061710A Granted JPS57176773A (en) 1981-04-23 1981-04-23 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57176773A (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59222965A (ja) * 1983-06-02 1984-12-14 Nec Corp シヨツトキ−障壁ゲ−ト型電界効果トランジスタの製造方法
JPS61156889A (ja) * 1984-12-28 1986-07-16 Nec Corp 半導体装置
US4795717A (en) * 1983-06-09 1989-01-03 Fujitsu Limited Method for producing semiconductor device
JPH01161874A (ja) * 1987-12-18 1989-06-26 Hitachi Ltd 半導体装置とその製造方法
US5959317A (en) * 1996-11-28 1999-09-28 Nec Corporation High frequency hetero junction type field effect transistor using multilayer electron feed layer
EP1865561A1 (en) * 2006-06-07 2007-12-12 Interuniversitair Microelektronica Centrum (IMEC) An enhancement mode field effect device and the method of production thereof
US8399911B2 (en) 2006-06-07 2013-03-19 Imec Enhancement mode field effect device and the method of production thereof

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59222965A (ja) * 1983-06-02 1984-12-14 Nec Corp シヨツトキ−障壁ゲ−ト型電界効果トランジスタの製造方法
US4795717A (en) * 1983-06-09 1989-01-03 Fujitsu Limited Method for producing semiconductor device
JPS61156889A (ja) * 1984-12-28 1986-07-16 Nec Corp 半導体装置
JPH01161874A (ja) * 1987-12-18 1989-06-26 Hitachi Ltd 半導体装置とその製造方法
US5959317A (en) * 1996-11-28 1999-09-28 Nec Corporation High frequency hetero junction type field effect transistor using multilayer electron feed layer
EP1865561A1 (en) * 2006-06-07 2007-12-12 Interuniversitair Microelektronica Centrum (IMEC) An enhancement mode field effect device and the method of production thereof
US8399911B2 (en) 2006-06-07 2013-03-19 Imec Enhancement mode field effect device and the method of production thereof

Also Published As

Publication number Publication date
JPS6353711B2 (enrdf_load_stackoverflow) 1988-10-25

Similar Documents

Publication Publication Date Title
JPS57176773A (en) Semiconductor device and manufacture thereof
MY105940A (en) High voltage semiconductor device and fabrication process.
JPS57117276A (en) Semiconductor device
JPS6437057A (en) Thin film field effect transistor
JPS5718360A (en) Gate controlling semiconductor element
JPS6451662A (en) Semiconductor device and its manufacture
JPS5599773A (en) Silicon control rectifier device
JPS5778171A (en) Thyristor
JPS56133874A (en) Semiconductor device
JPS57196570A (en) Thyristor
JPS5515202A (en) Semiconductor controlling rectifier
JPS5667970A (en) Gate turn-off thyristor
JPS54102993A (en) Optical semiconductor device
JPS53123673A (en) Manufacture of semiconductor device
JPS57160171A (en) Manufacture of semiconductor device
JPS538574A (en) Lateral thyristor
JPS5263687A (en) Semiconductor device
JPS5780769A (en) Semiconductor device
JPS56152260A (en) Manufacture of semiconductor device
JPS56122165A (en) Semiconductor device
JPS556855A (en) Heat sensitive thyristor
JPS55121679A (en) Short channel v-mos-fet
JPS5515201A (en) Silicon planer type thyristor
JPS57211774A (en) Lateral type transistor
JPS56116665A (en) Semiconductor device