JPS57167637A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57167637A
JPS57167637A JP3502481A JP3502481A JPS57167637A JP S57167637 A JPS57167637 A JP S57167637A JP 3502481 A JP3502481 A JP 3502481A JP 3502481 A JP3502481 A JP 3502481A JP S57167637 A JPS57167637 A JP S57167637A
Authority
JP
Japan
Prior art keywords
temperature rise
speed
rate
temperature
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3502481A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6216539B2 (enExample
Inventor
Kazunori Imaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3502481A priority Critical patent/JPS57167637A/ja
Priority to DE8282301212T priority patent/DE3280219D1/de
Priority to EP82301212A priority patent/EP0060676B1/en
Priority to IE559/82A priority patent/IE55966B1/en
Publication of JPS57167637A publication Critical patent/JPS57167637A/ja
Priority to US06/598,544 priority patent/US4597804A/en
Publication of JPS6216539B2 publication Critical patent/JPS6216539B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP3502481A 1981-03-11 1981-03-11 Manufacture of semiconductor device Granted JPS57167637A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP3502481A JPS57167637A (en) 1981-03-11 1981-03-11 Manufacture of semiconductor device
DE8282301212T DE3280219D1 (de) 1981-03-11 1982-03-10 Verfahren zur herstellung einer halbleiteranordnung mit ausgluehen eines halbleiterkoerpers.
EP82301212A EP0060676B1 (en) 1981-03-11 1982-03-10 A method for the production of a semiconductor device comprising annealing a silicon wafer
IE559/82A IE55966B1 (en) 1981-03-11 1982-03-11 A method for the production of a semiconductor device comprising annealing a silicon wafer
US06/598,544 US4597804A (en) 1981-03-11 1984-04-12 Methods of forming denuded zone in wafer by intrinsic gettering and forming bipolar transistor therein

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3502481A JPS57167637A (en) 1981-03-11 1981-03-11 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57167637A true JPS57167637A (en) 1982-10-15
JPS6216539B2 JPS6216539B2 (enExample) 1987-04-13

Family

ID=12430484

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3502481A Granted JPS57167637A (en) 1981-03-11 1981-03-11 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57167637A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS618930A (ja) * 1984-06-20 1986-01-16 インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン 半導体ウエーハの標準化処理方法
JPH0897222A (ja) * 1994-09-26 1996-04-12 Toshiba Ceramics Co Ltd シリコンウェーハの製造方法およびシリコンウェーハ

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01114970U (enExample) * 1988-01-28 1989-08-02

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS618930A (ja) * 1984-06-20 1986-01-16 インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン 半導体ウエーハの標準化処理方法
JPH0897222A (ja) * 1994-09-26 1996-04-12 Toshiba Ceramics Co Ltd シリコンウェーハの製造方法およびシリコンウェーハ

Also Published As

Publication number Publication date
JPS6216539B2 (enExample) 1987-04-13

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