JPS57166397A - Converting method of silicon wafer into single crystal - Google Patents

Converting method of silicon wafer into single crystal

Info

Publication number
JPS57166397A
JPS57166397A JP4859481A JP4859481A JPS57166397A JP S57166397 A JPS57166397 A JP S57166397A JP 4859481 A JP4859481 A JP 4859481A JP 4859481 A JP4859481 A JP 4859481A JP S57166397 A JPS57166397 A JP S57166397A
Authority
JP
Japan
Prior art keywords
single crystal
silicon wafer
oxide film
polycrystalline
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4859481A
Other languages
English (en)
Japanese (ja)
Other versions
JPH024559B2 (enrdf_load_html_response
Inventor
Junji Sakurai
Haruhisa Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4859481A priority Critical patent/JPS57166397A/ja
Publication of JPS57166397A publication Critical patent/JPS57166397A/ja
Publication of JPH024559B2 publication Critical patent/JPH024559B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Recrystallisation Techniques (AREA)
JP4859481A 1981-03-31 1981-03-31 Converting method of silicon wafer into single crystal Granted JPS57166397A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4859481A JPS57166397A (en) 1981-03-31 1981-03-31 Converting method of silicon wafer into single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4859481A JPS57166397A (en) 1981-03-31 1981-03-31 Converting method of silicon wafer into single crystal

Publications (2)

Publication Number Publication Date
JPS57166397A true JPS57166397A (en) 1982-10-13
JPH024559B2 JPH024559B2 (enrdf_load_html_response) 1990-01-29

Family

ID=12807727

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4859481A Granted JPS57166397A (en) 1981-03-31 1981-03-31 Converting method of silicon wafer into single crystal

Country Status (1)

Country Link
JP (1) JPS57166397A (enrdf_load_html_response)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6090898A (ja) * 1983-10-21 1985-05-22 Agency Of Ind Science & Technol 単結晶シリコン膜形成法
JPS62130509A (ja) * 1985-12-02 1987-06-12 Agency Of Ind Science & Technol 半導体基体の製造方法
JPH0282518A (ja) * 1988-09-20 1990-03-23 Agency Of Ind Science & Technol 半導体単結晶層の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6090898A (ja) * 1983-10-21 1985-05-22 Agency Of Ind Science & Technol 単結晶シリコン膜形成法
JPS62130509A (ja) * 1985-12-02 1987-06-12 Agency Of Ind Science & Technol 半導体基体の製造方法
JPH0282518A (ja) * 1988-09-20 1990-03-23 Agency Of Ind Science & Technol 半導体単結晶層の製造方法

Also Published As

Publication number Publication date
JPH024559B2 (enrdf_load_html_response) 1990-01-29

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