JPS57166310A - Formation of amorphous silicon - Google Patents

Formation of amorphous silicon

Info

Publication number
JPS57166310A
JPS57166310A JP56049299A JP4929981A JPS57166310A JP S57166310 A JPS57166310 A JP S57166310A JP 56049299 A JP56049299 A JP 56049299A JP 4929981 A JP4929981 A JP 4929981A JP S57166310 A JPS57166310 A JP S57166310A
Authority
JP
Japan
Prior art keywords
amorphous silicon
electrodes
ohmic contact
aluminum
formed under
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56049299A
Other languages
English (en)
Other versions
JPS5933532B2 (ja
Inventor
Kazuhisa Kato
Hiroyuki Tanigami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Stanley Electric Co Ltd
Original Assignee
Stanley Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stanley Electric Co Ltd filed Critical Stanley Electric Co Ltd
Priority to JP56049299A priority Critical patent/JPS5933532B2/ja
Priority to US06/363,236 priority patent/US4446168A/en
Publication of JPS57166310A publication Critical patent/JPS57166310A/ja
Publication of JPS5933532B2 publication Critical patent/JPS5933532B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP56049299A 1981-04-03 1981-04-03 非晶質シリコンの形成方法 Expired JPS5933532B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP56049299A JPS5933532B2 (ja) 1981-04-03 1981-04-03 非晶質シリコンの形成方法
US06/363,236 US4446168A (en) 1981-04-03 1982-03-29 Method of forming amorphous silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56049299A JPS5933532B2 (ja) 1981-04-03 1981-04-03 非晶質シリコンの形成方法

Publications (2)

Publication Number Publication Date
JPS57166310A true JPS57166310A (en) 1982-10-13
JPS5933532B2 JPS5933532B2 (ja) 1984-08-16

Family

ID=12827042

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56049299A Expired JPS5933532B2 (ja) 1981-04-03 1981-04-03 非晶質シリコンの形成方法

Country Status (2)

Country Link
US (1) US4446168A (ja)
JP (1) JPS5933532B2 (ja)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS591671A (ja) * 1982-05-28 1984-01-07 Fujitsu Ltd プラズマｃｖｄ装置
JPS6086276A (ja) * 1983-10-17 1985-05-15 Canon Inc 放電による堆積膜の形成方法
US4681653A (en) * 1984-06-01 1987-07-21 Texas Instruments Incorporated Planarized dielectric deposited using plasma enhanced chemical vapor deposition
US4529619A (en) * 1984-07-16 1985-07-16 Xerox Corporation Ohmic contacts for hydrogenated amorphous silicon
NL8501769A (nl) * 1984-10-02 1986-05-01 Imec Interuniversitair Micro E Bipolaire heterojunctie-transistor en werkwijze voor de vervaardiging daarvan.
US4797527A (en) * 1985-02-06 1989-01-10 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Electrode for electric discharge machining and method for producing the same
US4902531A (en) * 1986-10-30 1990-02-20 Nihon Shinku Gijutsu Kabushiki Kaisha Vacuum processing method and apparatus
GB8816631D0 (en) * 1988-07-13 1988-08-17 Raychem Ltd Circuit protection arrangement
GB8910854D0 (en) * 1989-05-11 1989-06-28 British Petroleum Co Plc Semiconductor device
DE69021821T2 (de) * 1989-09-20 1996-05-30 Sumitomo Electric Industries Verfahren und Anlage zum Herstellen von Hartstoff.
JP2626925B2 (ja) * 1990-05-23 1997-07-02 三菱電機株式会社 基板処理装置および基板処理方法
JPH04358530A (ja) * 1991-02-25 1992-12-11 Osaka Oxygen Ind Ltd 混合ガスの均一化処理方法
FR2703797B1 (fr) * 1993-04-06 1995-06-23 Matra Mhs Procede et dispositif de controle de la teneur en bore de borophosphosilicate.
US5714794A (en) * 1995-04-18 1998-02-03 Hitachi Chemical Company, Ltd. Electrostatic protective device
TW541584B (en) * 2001-06-01 2003-07-11 Semiconductor Energy Lab Semiconductor film, semiconductor device and method for manufacturing same
BRPI0808042A2 (pt) * 2007-02-28 2014-06-24 Concept & Design Ltd Sistema e dispositivo para preparação de bebida.

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon

Also Published As

Publication number Publication date
JPS5933532B2 (ja) 1984-08-16
US4446168A (en) 1984-05-01

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