JPS57160148A - Microwave integrated circuit device - Google Patents

Microwave integrated circuit device

Info

Publication number
JPS57160148A
JPS57160148A JP56045425A JP4542581A JPS57160148A JP S57160148 A JPS57160148 A JP S57160148A JP 56045425 A JP56045425 A JP 56045425A JP 4542581 A JP4542581 A JP 4542581A JP S57160148 A JPS57160148 A JP S57160148A
Authority
JP
Japan
Prior art keywords
electrode
gate
isolation
input terminals
drain electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56045425A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6349923B2 (enExample
Inventor
Shigekazu Hori
Kiyohiro Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56045425A priority Critical patent/JPS57160148A/ja
Publication of JPS57160148A publication Critical patent/JPS57160148A/ja
Publication of JPS6349923B2 publication Critical patent/JPS6349923B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00Electrical arrangements for controlling or matching impedance
    • H10W44/20Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • H10W72/07541Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07551Controlling the environment, e.g. atmosphere composition or temperature characterised by changes in properties of the bond wires during the connecting
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/541Dispositions of bond wires
    • H10W72/5445Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/541Dispositions of bond wires
    • H10W72/5449Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/541Dispositions of bond wires
    • H10W72/547Dispositions of multiple bond wires
    • H10W72/5475Dispositions of multiple bond wires multiple bond wires connected to common bond pads at both ends of the wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Networks Using Active Elements (AREA)
JP56045425A 1981-03-30 1981-03-30 Microwave integrated circuit device Granted JPS57160148A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56045425A JPS57160148A (en) 1981-03-30 1981-03-30 Microwave integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56045425A JPS57160148A (en) 1981-03-30 1981-03-30 Microwave integrated circuit device

Publications (2)

Publication Number Publication Date
JPS57160148A true JPS57160148A (en) 1982-10-02
JPS6349923B2 JPS6349923B2 (enExample) 1988-10-06

Family

ID=12718916

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56045425A Granted JPS57160148A (en) 1981-03-30 1981-03-30 Microwave integrated circuit device

Country Status (1)

Country Link
JP (1) JPS57160148A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63309001A (ja) * 1987-06-10 1988-12-16 A T R Koudenpa Tsushin Kenkyusho:Kk マイクロ波集積回路装置
JPH0258902A (ja) * 1988-08-24 1990-02-28 A T R Koudenpa Tsushin Kenkyusho:Kk 180度ハイブリッド回路
EP0725445A1 (en) * 1995-02-06 1996-08-07 Nec Corporation Comb-shaped field effect transistor
EP2053660A1 (en) 2007-10-26 2009-04-29 Kabushiki Kaisha Toshiba Semiconductor device
EP2056351A2 (en) 2007-10-31 2009-05-06 Kabushiki Kaisha Toshiba Semiconductor device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63309001A (ja) * 1987-06-10 1988-12-16 A T R Koudenpa Tsushin Kenkyusho:Kk マイクロ波集積回路装置
JPH0258902A (ja) * 1988-08-24 1990-02-28 A T R Koudenpa Tsushin Kenkyusho:Kk 180度ハイブリッド回路
EP0725445A1 (en) * 1995-02-06 1996-08-07 Nec Corporation Comb-shaped field effect transistor
US5652452A (en) * 1995-02-06 1997-07-29 Nec Corporation Semiconductor device with pluralities of gate electrodes
EP2053660A1 (en) 2007-10-26 2009-04-29 Kabushiki Kaisha Toshiba Semiconductor device
US7851832B2 (en) 2007-10-26 2010-12-14 Kabushiki Kaisha Toshiba Semiconductor device
EP2447998A1 (en) 2007-10-26 2012-05-02 Kabushiki Kaisha Toshiba Semiconductor device
EP2056351A2 (en) 2007-10-31 2009-05-06 Kabushiki Kaisha Toshiba Semiconductor device
US8546852B2 (en) 2007-10-31 2013-10-01 Kabushiki Kaisha Toshiba Semiconductor device

Also Published As

Publication number Publication date
JPS6349923B2 (enExample) 1988-10-06

Similar Documents

Publication Publication Date Title
JPS54152845A (en) High dielectric strength mosfet circuit
JPS5493981A (en) Semiconductor device
JPS6425220A (en) Reference voltage generation circuit
JPS57160148A (en) Microwave integrated circuit device
JPS553215A (en) Semiconductor switch circuit
JPS5471973A (en) Logical operation circuit
JPS5759384A (en) Manufacture of longitudinal type insulated field effect semiconductor device
JPS54137286A (en) Semiconductor device
JPS5451359A (en) Correcting circuit for fet characteristics
JPS54148358A (en) Diode gate circuit
JPS53103371A (en) Field effect transistor complementary circuit
JPS57157548A (en) Microwave integrated circuit
JPS5662372A (en) Junction type field effect semiconductor device
JPS57197869A (en) Semiconductor device
JPS5742163A (en) Charge transfer device
JPS6414960A (en) Semiconductor element
JPS5794984A (en) Semiconductor storage device
JPS5721856A (en) Semiconductor memory cell
JPS56133876A (en) Manufacture of junction type field effect semiconductor device
JPS57138172A (en) Semiconductor memory cell
MY100601A (en) A semiconductor memory.
JPS55107309A (en) Feedback circuit
JPS57103065A (en) Comparison circuit
JPS5287990A (en) Semiconductor device
JPS55166953A (en) Semiconductor integrated circuit device