JPS57160148A - Microwave integrated circuit device - Google Patents
Microwave integrated circuit deviceInfo
- Publication number
- JPS57160148A JPS57160148A JP56045425A JP4542581A JPS57160148A JP S57160148 A JPS57160148 A JP S57160148A JP 56045425 A JP56045425 A JP 56045425A JP 4542581 A JP4542581 A JP 4542581A JP S57160148 A JPS57160148 A JP S57160148A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- gate
- isolation
- input terminals
- drain electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W44/00—Electrical arrangements for controlling or matching impedance
- H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
- H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
- H10W72/07551—Controlling the environment, e.g. atmosphere composition or temperature characterised by changes in properties of the bond wires during the connecting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/541—Dispositions of bond wires
- H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/541—Dispositions of bond wires
- H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/541—Dispositions of bond wires
- H10W72/547—Dispositions of multiple bond wires
- H10W72/5475—Dispositions of multiple bond wires multiple bond wires connected to common bond pads at both ends of the wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
Landscapes
- Networks Using Active Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56045425A JPS57160148A (en) | 1981-03-30 | 1981-03-30 | Microwave integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56045425A JPS57160148A (en) | 1981-03-30 | 1981-03-30 | Microwave integrated circuit device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57160148A true JPS57160148A (en) | 1982-10-02 |
| JPS6349923B2 JPS6349923B2 (enExample) | 1988-10-06 |
Family
ID=12718916
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56045425A Granted JPS57160148A (en) | 1981-03-30 | 1981-03-30 | Microwave integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57160148A (enExample) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63309001A (ja) * | 1987-06-10 | 1988-12-16 | A T R Koudenpa Tsushin Kenkyusho:Kk | マイクロ波集積回路装置 |
| JPH0258902A (ja) * | 1988-08-24 | 1990-02-28 | A T R Koudenpa Tsushin Kenkyusho:Kk | 180度ハイブリッド回路 |
| EP0725445A1 (en) * | 1995-02-06 | 1996-08-07 | Nec Corporation | Comb-shaped field effect transistor |
| EP2053660A1 (en) | 2007-10-26 | 2009-04-29 | Kabushiki Kaisha Toshiba | Semiconductor device |
| EP2056351A2 (en) | 2007-10-31 | 2009-05-06 | Kabushiki Kaisha Toshiba | Semiconductor device |
-
1981
- 1981-03-30 JP JP56045425A patent/JPS57160148A/ja active Granted
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63309001A (ja) * | 1987-06-10 | 1988-12-16 | A T R Koudenpa Tsushin Kenkyusho:Kk | マイクロ波集積回路装置 |
| JPH0258902A (ja) * | 1988-08-24 | 1990-02-28 | A T R Koudenpa Tsushin Kenkyusho:Kk | 180度ハイブリッド回路 |
| EP0725445A1 (en) * | 1995-02-06 | 1996-08-07 | Nec Corporation | Comb-shaped field effect transistor |
| US5652452A (en) * | 1995-02-06 | 1997-07-29 | Nec Corporation | Semiconductor device with pluralities of gate electrodes |
| EP2053660A1 (en) | 2007-10-26 | 2009-04-29 | Kabushiki Kaisha Toshiba | Semiconductor device |
| US7851832B2 (en) | 2007-10-26 | 2010-12-14 | Kabushiki Kaisha Toshiba | Semiconductor device |
| EP2447998A1 (en) | 2007-10-26 | 2012-05-02 | Kabushiki Kaisha Toshiba | Semiconductor device |
| EP2056351A2 (en) | 2007-10-31 | 2009-05-06 | Kabushiki Kaisha Toshiba | Semiconductor device |
| US8546852B2 (en) | 2007-10-31 | 2013-10-01 | Kabushiki Kaisha Toshiba | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6349923B2 (enExample) | 1988-10-06 |
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