JPS57157249A - Preparation of optical exposure mask - Google Patents
Preparation of optical exposure maskInfo
- Publication number
- JPS57157249A JPS57157249A JP4218381A JP4218381A JPS57157249A JP S57157249 A JPS57157249 A JP S57157249A JP 4218381 A JP4218381 A JP 4218381A JP 4218381 A JP4218381 A JP 4218381A JP S57157249 A JPS57157249 A JP S57157249A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- pattern
- mask
- silicide
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 title 1
- 238000005530 etching Methods 0.000 abstract 3
- 229910021332 silicide Inorganic materials 0.000 abstract 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 238000010894 electron beam technology Methods 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- VLJQDHDVZJXNQL-UHFFFAOYSA-N 4-methyl-n-(oxomethylidene)benzenesulfonamide Chemical compound CC1=CC=C(S(=O)(=O)N=C=O)C=C1 VLJQDHDVZJXNQL-UHFFFAOYSA-N 0.000 abstract 1
- ADNDKZZPECQWEJ-UHFFFAOYSA-N acetic acid;nitric acid;hydrofluoride Chemical compound F.CC(O)=O.O[N+]([O-])=O ADNDKZZPECQWEJ-UHFFFAOYSA-N 0.000 abstract 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 238000010030 laminating Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 229910021340 platinum monosilicide Inorganic materials 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
- G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4218381A JPS57157249A (en) | 1981-03-23 | 1981-03-23 | Preparation of optical exposure mask |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4218381A JPS57157249A (en) | 1981-03-23 | 1981-03-23 | Preparation of optical exposure mask |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57157249A true JPS57157249A (en) | 1982-09-28 |
JPS6340306B2 JPS6340306B2 (enrdf_load_stackoverflow) | 1988-08-10 |
Family
ID=12628879
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4218381A Granted JPS57157249A (en) | 1981-03-23 | 1981-03-23 | Preparation of optical exposure mask |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57157249A (enrdf_load_stackoverflow) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6195356A (ja) * | 1984-10-16 | 1986-05-14 | Mitsubishi Electric Corp | フオトマスクブランク |
JPS61173251A (ja) * | 1985-01-28 | 1986-08-04 | Mitsubishi Electric Corp | フオトマスクの製造方法 |
JPS61173252A (ja) * | 1985-01-28 | 1986-08-04 | Mitsubishi Electric Corp | フォトマスクブランクの形成方法 |
JPS61173250A (ja) * | 1985-01-28 | 1986-08-04 | Mitsubishi Electric Corp | フオトマスク材料 |
JPS6252551A (ja) * | 1985-08-30 | 1987-03-07 | Mitsubishi Electric Corp | フオトマスク材料 |
JPS6252550A (ja) * | 1985-08-30 | 1987-03-07 | Mitsubishi Electric Corp | フオトマスク材料 |
WO2000017710A1 (en) * | 1998-09-17 | 2000-03-30 | Quantiscript Inc. | Fabrication of sub-micron etch-resistant metal/semiconductor structures using resistless electron beam lithography |
WO2002063394A1 (en) * | 2001-02-05 | 2002-08-15 | Quantiscript Inc. | Fabrication of structures of metal/semiconductor compound by x-ray/euv projection lithography |
-
1981
- 1981-03-23 JP JP4218381A patent/JPS57157249A/ja active Granted
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6195356A (ja) * | 1984-10-16 | 1986-05-14 | Mitsubishi Electric Corp | フオトマスクブランク |
JPS61173251A (ja) * | 1985-01-28 | 1986-08-04 | Mitsubishi Electric Corp | フオトマスクの製造方法 |
JPS61173252A (ja) * | 1985-01-28 | 1986-08-04 | Mitsubishi Electric Corp | フォトマスクブランクの形成方法 |
JPS61173250A (ja) * | 1985-01-28 | 1986-08-04 | Mitsubishi Electric Corp | フオトマスク材料 |
US4876164A (en) * | 1985-01-28 | 1989-10-24 | Mitsubishi Denki Kabushiki Kaisha | Process for manufacturing a photomask |
US4717625A (en) * | 1985-08-30 | 1988-01-05 | Mitsubishi Denki Kabushiki Kaisha | Photomask material |
JPS6252550A (ja) * | 1985-08-30 | 1987-03-07 | Mitsubishi Electric Corp | フオトマスク材料 |
US4783371A (en) * | 1985-08-30 | 1988-11-08 | Mitsubishi Denki Kabushiki Kaisha | Photomask material |
JPS6252551A (ja) * | 1985-08-30 | 1987-03-07 | Mitsubishi Electric Corp | フオトマスク材料 |
US6261938B1 (en) | 1997-02-12 | 2001-07-17 | Quantiscript, Inc. | Fabrication of sub-micron etch-resistant metal/semiconductor structures using resistless electron beam lithography |
WO2000017710A1 (en) * | 1998-09-17 | 2000-03-30 | Quantiscript Inc. | Fabrication of sub-micron etch-resistant metal/semiconductor structures using resistless electron beam lithography |
WO2002063394A1 (en) * | 2001-02-05 | 2002-08-15 | Quantiscript Inc. | Fabrication of structures of metal/semiconductor compound by x-ray/euv projection lithography |
US6897140B2 (en) | 2001-02-05 | 2005-05-24 | Quantiscript, Inc. | Fabrication of structures of metal/semiconductor compound by X-ray/EUV projection lithography |
Also Published As
Publication number | Publication date |
---|---|
JPS6340306B2 (enrdf_load_stackoverflow) | 1988-08-10 |
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