JPS5517133A - Photo mask - Google Patents

Photo mask

Info

Publication number
JPS5517133A
JPS5517133A JP8935978A JP8935978A JPS5517133A JP S5517133 A JPS5517133 A JP S5517133A JP 8935978 A JP8935978 A JP 8935978A JP 8935978 A JP8935978 A JP 8935978A JP S5517133 A JPS5517133 A JP S5517133A
Authority
JP
Japan
Prior art keywords
film
metal
thickness
sputtering
glass substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8935978A
Other languages
Japanese (ja)
Inventor
Kenji Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8935978A priority Critical patent/JPS5517133A/en
Publication of JPS5517133A publication Critical patent/JPS5517133A/en
Pending legal-status Critical Current

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE: To prevent the diffusion of impurities, particularly Na elements, etc. from glass substrates by providing a thin film composed of heavy metal oxides between the glass substrate and metal film.
CONSTITUTION: Metal, e.g., Cr, is used for target and a Cr2O3 film 2 is provided as an impurity barrier to thicknesses of about 50 to 100Å on a glass substrate 1 by reaction sputtering in an atmosphere comprising mixing O2 in inert gas. Next, the supply of O2 is interrupted, and a metal Cr film 4 is formed to a thickness of about 500Å by ordinary sputtering and further O2 is introduced again and a Cr2O3 film 4 is formed a thickness of about 300Å by reaction sputtering. Thereby, etching at the patterning is evenly progressed and the desired accurate mask patterns are obtainable.
COPYRIGHT: (C)1980,JPO&Japio
JP8935978A 1978-07-24 1978-07-24 Photo mask Pending JPS5517133A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8935978A JPS5517133A (en) 1978-07-24 1978-07-24 Photo mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8935978A JPS5517133A (en) 1978-07-24 1978-07-24 Photo mask

Publications (1)

Publication Number Publication Date
JPS5517133A true JPS5517133A (en) 1980-02-06

Family

ID=13968504

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8935978A Pending JPS5517133A (en) 1978-07-24 1978-07-24 Photo mask

Country Status (1)

Country Link
JP (1) JPS5517133A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60134015A (en) * 1983-12-22 1985-07-17 Toray Ind Inc Melt spinning of polyamide

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51113466A (en) * 1975-03-29 1976-10-06 Hoya Corp Chromium mask negative plate
JPS5322031A (en) * 1976-11-25 1978-03-01 Otake Seisakushiyo Kk Paddy field weeder

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51113466A (en) * 1975-03-29 1976-10-06 Hoya Corp Chromium mask negative plate
JPS5322031A (en) * 1976-11-25 1978-03-01 Otake Seisakushiyo Kk Paddy field weeder

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60134015A (en) * 1983-12-22 1985-07-17 Toray Ind Inc Melt spinning of polyamide

Similar Documents

Publication Publication Date Title
JPS5620165A (en) Formation of pattern
JPS5340281A (en) Photo mask material and manufacturtof it
JPS561533A (en) Method of photoetching
JPS5669835A (en) Method for forming thin film pattern
JPS5517152A (en) Photo mask
JPS5764739A (en) Photomask substrate and photomask
JPS57157249A (en) Preparation of optical exposure mask
JPS5517133A (en) Photo mask
JPS5446479A (en) Negative plate for photo mask
JPS5461478A (en) Chromium plate
JPS57157247A (en) Optical exposure mask
JPS57198632A (en) Fine pattern formation
JPS5421272A (en) Metal photo mask
JPS55163539A (en) Photo mask
JPS54162460A (en) Electrode forming method
JPS5421274A (en) Chromium plate
JPS55128830A (en) Method of working photoresist film
JPS5498179A (en) Preparation of minute circuits and elements
JPS5493970A (en) Patttern forming method of multi-layer metallic thin film
JPS56138941A (en) Forming method of wiring layer
JPS5649525A (en) Formation of thin film pattern
JPS53116774A (en) Production of semiconductor device
JPS5331974A (en) Mask for exposure
JPS5534694A (en) Mask plate
JPS5382269A (en) Production of mask