JPS57155773A - High pressure-resistant planar transistor - Google Patents
High pressure-resistant planar transistorInfo
- Publication number
- JPS57155773A JPS57155773A JP56041525A JP4152581A JPS57155773A JP S57155773 A JPS57155773 A JP S57155773A JP 56041525 A JP56041525 A JP 56041525A JP 4152581 A JP4152581 A JP 4152581A JP S57155773 A JPS57155773 A JP S57155773A
- Authority
- JP
- Japan
- Prior art keywords
- region
- guard
- type
- planar transistor
- base region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56041525A JPS57155773A (en) | 1981-03-20 | 1981-03-20 | High pressure-resistant planar transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56041525A JPS57155773A (en) | 1981-03-20 | 1981-03-20 | High pressure-resistant planar transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57155773A true JPS57155773A (en) | 1982-09-25 |
JPH0120549B2 JPH0120549B2 (enrdf_load_stackoverflow) | 1989-04-17 |
Family
ID=12610803
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56041525A Granted JPS57155773A (en) | 1981-03-20 | 1981-03-20 | High pressure-resistant planar transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57155773A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58114434A (ja) * | 1981-12-28 | 1983-07-07 | Fujitsu Ltd | 高耐圧半導体装置 |
JPS60153164A (ja) * | 1984-01-20 | 1985-08-12 | Nec Corp | 半導体装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4968669A (enrdf_load_stackoverflow) * | 1972-11-06 | 1974-07-03 | ||
JPS5269275A (en) * | 1975-12-08 | 1977-06-08 | Hitachi Ltd | Transistor |
JPS5318382A (en) * | 1976-08-02 | 1978-02-20 | Rca Corp | Method of manufacturing crt screen structure |
-
1981
- 1981-03-20 JP JP56041525A patent/JPS57155773A/ja active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4968669A (enrdf_load_stackoverflow) * | 1972-11-06 | 1974-07-03 | ||
JPS5269275A (en) * | 1975-12-08 | 1977-06-08 | Hitachi Ltd | Transistor |
JPS5318382A (en) * | 1976-08-02 | 1978-02-20 | Rca Corp | Method of manufacturing crt screen structure |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58114434A (ja) * | 1981-12-28 | 1983-07-07 | Fujitsu Ltd | 高耐圧半導体装置 |
JPS60153164A (ja) * | 1984-01-20 | 1985-08-12 | Nec Corp | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
JPH0120549B2 (enrdf_load_stackoverflow) | 1989-04-17 |
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