JPS57145324A - Adjustment of deflector in electron exposure apparatus - Google Patents
Adjustment of deflector in electron exposure apparatusInfo
- Publication number
- JPS57145324A JPS57145324A JP3033381A JP3033381A JPS57145324A JP S57145324 A JPS57145324 A JP S57145324A JP 3033381 A JP3033381 A JP 3033381A JP 3033381 A JP3033381 A JP 3033381A JP S57145324 A JPS57145324 A JP S57145324A
- Authority
- JP
- Japan
- Prior art keywords
- mark
- marks
- substrate
- deflector
- deflection system
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
- H01J37/3045—Object or beam position registration
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Beam Exposure (AREA)
Abstract
PURPOSE:To achieve adjustment at a high speed by a method wherein a mark position is set on a mark area substrate and a deflector is corrected so that a coincidence between the mark position and the mark position to an electron deflection system can be obtained. CONSTITUTION:A mark area substrate 13 of a size similar to that of a deflection system field is attached to one end of a stage 3. At least three marks M1- M4 are formed on the substrate 13. The stage 3 is displaced so that the mark M1 on the substrate 13 is positioned at a center of the deflection system field, the position for the mark M1 is determined accurately through an irradiation of electron rays by using a laser measuring system. Successively, a similar processing is provided for the marks M2-M4 as well. Subsequently, the stage 3 is displaced so that a coincidence between the center of the deflection system field and that of the substrate 13 can be obtained, thereafter the marks M1-M4 are scanned by the electron rays and the position for them are determined. Successively, a gain or a rotation of the deflector is corrected so that the coincidence between the position coordinate of the marks M1-M4 obtained by the foregoing process and the mark position obtained previously can be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3033381A JPS57145324A (en) | 1981-03-03 | 1981-03-03 | Adjustment of deflector in electron exposure apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3033381A JPS57145324A (en) | 1981-03-03 | 1981-03-03 | Adjustment of deflector in electron exposure apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57145324A true JPS57145324A (en) | 1982-09-08 |
Family
ID=12300880
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3033381A Pending JPS57145324A (en) | 1981-03-03 | 1981-03-03 | Adjustment of deflector in electron exposure apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57145324A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02216815A (en) * | 1989-02-17 | 1990-08-29 | Jeol Ltd | Distortion compensation of deflection system lithographic |
-
1981
- 1981-03-03 JP JP3033381A patent/JPS57145324A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02216815A (en) * | 1989-02-17 | 1990-08-29 | Jeol Ltd | Distortion compensation of deflection system lithographic |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0210631A3 (en) | Method and apparatus for charged particle beam exposure | |
| JPS5633830A (en) | Detecting method for mark positioning by electron beam | |
| GB1531909A (en) | Automatic adjustment of a mask with respect to the surface of a substrate body | |
| JPS5694630A (en) | Etching method using ion-beam | |
| EP0250391A3 (en) | Arrangement for carrying out a process for positioning a structure image of a mask on a substrate | |
| JPS5316578A (en) | Electron beam exposure apparatus | |
| JPS57145324A (en) | Adjustment of deflector in electron exposure apparatus | |
| JPS5717132A (en) | Formation of microscopic pattern using lithography and device thereof | |
| JPS57210549A (en) | Method of correction attendant on deflection | |
| JPS57144404A (en) | Method and device for measurement of size and shape of shape steel | |
| JPS5740927A (en) | Exposing method of electron beam | |
| JPS51130222A (en) | A process for producing an electron beam resist image | |
| JPS54865A (en) | Molecular beam crystal growing method | |
| JPS53117463A (en) | Position detection method | |
| JPS5215267A (en) | Fine processing method | |
| JPS52130570A (en) | Electron beam exposing device | |
| JPS51148370A (en) | Electron ray exposure method | |
| JPS56107555A (en) | Detection of position of electron beam | |
| JPS5580321A (en) | Electron-beam exposure | |
| JPS57161746A (en) | Glass mask | |
| JPS5494882A (en) | X-ray exposure apparatus | |
| JPS5320773A (en) | Electron beam scanning apparatus and its scanning method | |
| JPS6482440A (en) | Illuminating angle setting method for focusing ion beam device | |
| ES487232A1 (en) | Method of manufacturing a color television display tube and color television display tube manufactured according to the method | |
| JPS5365668A (en) | Electron beam exposure device |