JPS5717132A - Formation of microscopic pattern using lithography and device thereof - Google Patents

Formation of microscopic pattern using lithography and device thereof

Info

Publication number
JPS5717132A
JPS5717132A JP9253080A JP9253080A JPS5717132A JP S5717132 A JPS5717132 A JP S5717132A JP 9253080 A JP9253080 A JP 9253080A JP 9253080 A JP9253080 A JP 9253080A JP S5717132 A JPS5717132 A JP S5717132A
Authority
JP
Japan
Prior art keywords
substrate
shaft
mask
movements
flat surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9253080A
Other languages
Japanese (ja)
Inventor
Masahiro Okabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9253080A priority Critical patent/JPS5717132A/en
Publication of JPS5717132A publication Critical patent/JPS5717132A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To form the microscopic pattern accurately on a distorted substrate by a method wherein radial beams of light are irradiated at the three or four reference points set on a mask and a substrate and simultaneous equations consisting of a dependent variable representing the independent variable and the correction working of a positional errors is solved. CONSTITUTION:The three or four reference points are established on the mask and the substrate, radial beams of light are irradiated, the element of performance to be used for correction of positional errors are consisted of eight kinds, namely, movements in X-Y shaft direction, revolution within XY flat surface, Z shaft movements (mask to substrate direction), rotations wherein XZ flat surface, revolution within YZ flat surface and movements of source of irradiating light in X shaft-Y shaft direction. Degree of freedom is thereby increased and position matching is performed by solving the simultaneous equations consisting of six or eight dependent variables representing the six or eight independent variables obtained from the positional errors in the X-Y shaft direction and six or eight dependent variables representing six or eight compensating actions. Through these procedures, a desired pattern of high accuracy can be formed on a distorted substrate whereon the pattern is formed.
JP9253080A 1980-07-07 1980-07-07 Formation of microscopic pattern using lithography and device thereof Pending JPS5717132A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9253080A JPS5717132A (en) 1980-07-07 1980-07-07 Formation of microscopic pattern using lithography and device thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9253080A JPS5717132A (en) 1980-07-07 1980-07-07 Formation of microscopic pattern using lithography and device thereof

Publications (1)

Publication Number Publication Date
JPS5717132A true JPS5717132A (en) 1982-01-28

Family

ID=14056903

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9253080A Pending JPS5717132A (en) 1980-07-07 1980-07-07 Formation of microscopic pattern using lithography and device thereof

Country Status (1)

Country Link
JP (1) JPS5717132A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5954225A (en) * 1982-09-21 1984-03-29 Hitachi Ltd Projection exposure method
JPS59134830A (en) * 1982-12-30 1984-08-02 トムソン−セ−エスエフ Method and apparatus for optically arraying pattern on two close-up plane
JPH06188171A (en) * 1993-08-13 1994-07-08 Nikon Corp Projection exposure system
JPH07183213A (en) * 1994-09-30 1995-07-21 Hitachi Ltd Projection exposure method
US5443932A (en) * 1988-09-30 1995-08-22 Canon Kabushiki Kaisha Exposure method
US6544698B1 (en) 2001-06-27 2003-04-08 University Of South Florida Maskless 2-D and 3-D pattern generation photolithography
US6764796B2 (en) 2001-06-27 2004-07-20 University Of South Florida Maskless photolithography using plasma displays
US6998219B2 (en) 2001-06-27 2006-02-14 University Of South Florida Maskless photolithography for etching and deposition
US7271877B2 (en) 2001-06-27 2007-09-18 University Of South Florida Method and apparatus for maskless photolithography
US7468238B2 (en) 2001-06-27 2008-12-23 University Of South Florida Maskless photolithography for using photoreactive agents

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0474854B2 (en) * 1982-09-21 1992-11-27
JPS5954225A (en) * 1982-09-21 1984-03-29 Hitachi Ltd Projection exposure method
JPS59134830A (en) * 1982-12-30 1984-08-02 トムソン−セ−エスエフ Method and apparatus for optically arraying pattern on two close-up plane
JPS6352453B2 (en) * 1982-12-30 1988-10-19 Tomuson Sa
US5443932A (en) * 1988-09-30 1995-08-22 Canon Kabushiki Kaisha Exposure method
JPH06188171A (en) * 1993-08-13 1994-07-08 Nikon Corp Projection exposure system
JPH0738376B2 (en) * 1993-08-13 1995-04-26 株式会社ニコン Projection exposure device
JPH07183213A (en) * 1994-09-30 1995-07-21 Hitachi Ltd Projection exposure method
US6544698B1 (en) 2001-06-27 2003-04-08 University Of South Florida Maskless 2-D and 3-D pattern generation photolithography
US6764796B2 (en) 2001-06-27 2004-07-20 University Of South Florida Maskless photolithography using plasma displays
US6998219B2 (en) 2001-06-27 2006-02-14 University Of South Florida Maskless photolithography for etching and deposition
US7271877B2 (en) 2001-06-27 2007-09-18 University Of South Florida Method and apparatus for maskless photolithography
US7468238B2 (en) 2001-06-27 2008-12-23 University Of South Florida Maskless photolithography for using photoreactive agents
US7573561B2 (en) 2001-06-27 2009-08-11 University Of South Florida Method and apparatus for maskless photolithography
US7572573B2 (en) 2001-06-27 2009-08-11 University Of South Florida Maskless photolithography for etching and deposition

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