JPS6184649A - Photomask - Google Patents
PhotomaskInfo
- Publication number
- JPS6184649A JPS6184649A JP59207620A JP20762084A JPS6184649A JP S6184649 A JPS6184649 A JP S6184649A JP 59207620 A JP59207620 A JP 59207620A JP 20762084 A JP20762084 A JP 20762084A JP S6184649 A JPS6184649 A JP S6184649A
- Authority
- JP
- Japan
- Prior art keywords
- photomask
- substrate
- circuit pattern
- alignment
- drawn
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
【発明の詳細な説明】
（イ）産業上の利用分野
この発明は、ホトリソグラフィ技術に用いるホトマスク
に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application This invention relates to a photomask used in photolithography technology.
（ｒ−＋ ）従、・ＩＳ技術
一般にホトリソグラフィ技術を用いて基板に所望の回路
パターンを形成するには、ビンアライメント装置を用い
て種々な回路パターンが描かれた数種類のホトマスクを
一枚の基板に前記ホトマスクの数だけ焼き付けている。(r-+) Therefore, ・IS technology Generally, in order to form a desired circuit pattern on a substrate using photolithography technology, several types of photomasks with various circuit patterns drawn are assembled into one sheet using a bin alignment device. The number of photomasks is printed onto the substrate.
前記ビンアライメント装置では、予め基板に付けたアラ
イメントマークと後で使用するホトマスクのアライメン
トマークとを目印として前記ホトマスクと基板との位置
合わせを行っているので、比較的精度良く行うことがで
きる。In the bin alignment apparatus, the photomask and the substrate are aligned using the alignment marks attached to the substrate in advance and the alignment marks of a photomask to be used later as marks, so the alignment can be performed with relatively high accuracy.
しかし、アライメントマークを基板に付ける場合に才ｊ
いて、アライメントマークが描かれたホトマスクと基板
との位置合わせの目印がないため、ホトマスクの外形と
基板の外形が重なるのを目印として、作業者がホトマス
クからはみ出た基板の位：Ｖ？、を修正していた。しか
しながら、前記作業者が熟練した者であれば比較的高い
精度を得ることはできるが、余り熟練していない者が行
う場合には商いネｎ度を要求することができないと共に
、作業能率が低下するという問題を住しる。However, when attaching alignment marks to the board, it is difficult to
Since there are no marks for positioning the photomask with alignment marks drawn on it and the substrate, the operator uses the overlapping outline of the photomask and the outline of the board as a guide to determine the position of the board protruding from the photomask: V? , was fixed. However, if the worker is a skilled worker, relatively high accuracy can be obtained, but if the worker is not very skilled, it is not possible to require a high degree of businessmanship, and the work efficiency decreases. Live the problem of doing.
さらに、アライメントマークを精度良く焼き付けること
ができたとしても、回路パターンの焼き付けが進んで行
くと、ホトマスクの回路パターンおよび基板に形成され
た回路パターンとが非常に微細になり、アライメントマ
ークと回路パターンとが判別し難くなってくる。そのた
め、ホトマスクと基板との位置合わせの精度が低下して
くるという問題をも生じる。即ち、製品の歩留りおよび
信頼性の低下を招く原因となる。Furthermore, even if the alignment mark can be printed with high precision, as the printing of the circuit pattern progresses, the circuit pattern on the photomask and the circuit pattern formed on the board will become extremely fine, causing the alignment mark and the circuit pattern to become very fine. It becomes difficult to distinguish. Therefore, a problem arises in that the accuracy of alignment between the photomask and the substrate decreases. That is, this causes a decrease in product yield and reliability.
（ハ）目的
この発明は、作業者の熟練度に関係なく、ホトマスクと
基板との位置合わせを精度良く行い、製品の歩留りおよ
び信頼性の向上を図りえるホトマスクを提供することを
目的としている。(C) Purpose The present invention aims to provide a photomask that can accurately align the photomask and the substrate regardless of the skill level of the operator, thereby improving the yield and reliability of the product.
（ニ）構成
この発明に係るホトマスクの特徴とす′る処は、回路パ
ターンが描かれるべき領域の周囲に所定形状のスケール
パターンを形成したことにある。(D) Structure The photomask according to the present invention is characterized by the fact that a scale pattern of a predetermined shape is formed around the area where a circuit pattern is to be drawn.
（ホ）実施例
第１図は、この発明に係るホトマスクの一実施例を示す
全体説明図、第２図は、スケールパターンの一部拡大図
である。(E) Embodiment FIG. 1 is an overall explanatory view showing an embodiment of a photomask according to the present invention, and FIG. 2 is a partially enlarged view of a scale pattern.
ｌは例えば超過明度なガラスよりなるホトマスクであり
、略中夫に所望の回路パターンを描くべき領域２がある
。この領域２は、回路パターンを形成する基板の外形寸
法と同一寸法になされている。1 is a photomask made of, for example, ultra-bright glass, and has an area 2 approximately in the middle in which a desired circuit pattern is to be drawn. This area 2 has the same dimensions as the external dimensions of the substrate on which the circuit pattern is formed.
３はスケールパターンであり、前記領域２の周囲を囲む
ように描かれている。具体的には、スケールパターン３
は、領域２の各辺から所定間隔をもって平行な輪郭線３
１を複数描くと共に、前記輪郭線３１に対して直交する
複数の縦線３２および横線３３を１１■くことによって
格子状になされている。3 is a scale pattern, which is drawn so as to surround the area 2 . Specifically, scale pattern 3
is a parallel contour line 3 at a predetermined interval from each side of region 2.
1 is drawn, and a plurality of vertical lines 32 and 11 horizontal lines 33 perpendicular to the outline 31 are drawn to form a grid.
そして、上記ホトマスクｌを用いて基板に所望の回路パ
ターンを焼き付ける場合を説明する。Next, a case will be described in which a desired circuit pattern is printed onto a substrate using the photomask I.
■ まず、領域２の所定個所にアライメントマークを描
いたホトマスク１を用意し、ビンアライメント装置にセ
ットする。(1) First, a photomask 1 with alignment marks drawn at predetermined locations in area 2 is prepared and set in a bin alignment device.
＠ 回路パターンを形成すべき基板を前記ホトマスクｌ
と所定間隔をもって平行にビンアライメント装置に固定
する。なお、基板がホトマスクＩの下に配置されるよう
に設定されている。@ The substrate on which the circuit pattern is to be formed is placed in the photomask l.
and fixed to the bin alignment device in parallel with each other at a predetermined distance. Note that the substrate is arranged under the photomask I.
■ 以上のように、ホトマスクｌと基板とをビンアラ４
メント装置に装着した後、上方から見てホトマスク１か
ら基板かはみでていないかを確認する。■ As described above, the photomask l and the substrate are placed in a bin
After mounting on the photomask 1, check that the substrate does not protrude from the photomask 1 when viewed from above.
■ 即ち、スケールパターン３を目印とし、ビン７ライ
メント装置にて三次元方向に基板を誘導し゛ζ基板とホ
トマスクｌとの位置合わせを行う。(2) That is, using the scale pattern 3 as a mark, the substrate is guided in a three-dimensional direction using a bin 7 alignment device, and the ζ substrate and the photomask 1 are aligned.
■ １−記のようにしてアライメントマークを基板に焼
き付けた後は、基板のアライメントマークと次に使用す
るホトマスクの７ライメントマークとを目印として前記
ホトマスクと基板との位置合ゎ一層を順次行えばよい。■ After burning the alignment mark on the substrate as described in 1-1, align the photomask and substrate one by one using the alignment mark on the substrate and the 7 alignment mark on the photomask to be used next as a guide. good.
なお、１−一実施例のスケールパターン３を、基板が明
白色系であることに基づいて黒色とすれば基板とホ１−
マスクｌとの位置ずれがより一層明瞭となるという効果
を得ることができる。Note that if the scale pattern 3 of Example 1-1 is made black based on the fact that the substrate is a bright color, the substrate and Hole 1-1 will be black.
It is possible to obtain the effect that the positional deviation with respect to the mask 1 becomes even clearer.
また、この発明はＦ−実施例で説明したスケールパター
ン３の形状に限定されず、例えば輪郭線３１のみであっ
てもよく、上述の実施例と同様の効果が１７られる。Further, the present invention is not limited to the shape of the scale pattern 3 explained in the F-embodiment, and may be, for example, only the contour line 31, and the same effects as in the above-mentioned embodiment can be obtained.
（へ）効果
この発明は、上記詳説したように、回路パターンを形成
すべき領域の周囲に所望形状のスケールパターンを形成
したから、ホトマスクと基板との位置ずれの量がスケー
ルパターンによって判るため、それに合わせた位置の修
正が行い易くなる。(F) Effect As explained in detail above, in this invention, since a scale pattern of a desired shape is formed around the area where a circuit pattern is to be formed, the amount of positional deviation between the photomask and the substrate can be determined from the scale pattern. It becomes easier to correct the position accordingly.
従って、ホトマスクと基板との位置合わせを作業者ので
キ練度に関係なく誰でも容易にａ度良く行うことかでき
る。即ち、位置合わせに要する時間を短縮することがで
きる結果、工程のＷ−ＩＡ化を図ることができ、しかも
製品の歩留りおよび信や（１性の向−ヒを図ることがで
きる。Therefore, anyone can easily and accurately align the photomask and the substrate regardless of the skill level of the operator. That is, as a result of being able to shorten the time required for alignment, it is possible to achieve a W-IA process, and also to improve product yield and reliability.
第１図はこの発明に係るホトマスクの一実施例を示す全
体説明図、第２図はスケールパターンの−・部砿大図で
ある。
！・・・ホトマスク、２・・・領域、３・・・スゲール
パターン、３１・・・輪郭線、３２・・・縦線、３３・
・・横線。
特、：゛１出願人 ローム株式会社代理人 弁
理士 大 西 孝 治
第１図
第２図FIG. 1 is an overall explanatory view showing an embodiment of a photomask according to the present invention, and FIG. 2 is a large-scale view of a scale pattern. ! ... Photomask, 2 ... Region, 3 ... Sugere pattern, 31 ... Contour line, 32 ... Vertical line, 33 ...
··horizontal line. Special: 1 Applicant: ROHM Co., Ltd. Agent, Patent Attorney: Takaharu Ohnishi Figure 1 Figure 2
Claims (2)
グラフィ技術に用いるホトマスクであって、前記ホトマ
スクに描かれる回路パターンの領域の周囲に所望形状の
スケールパターンを形成したことを特徴とするホトマス
ク。(1) A photomask used in photolithography technology for printing a desired circuit pattern onto a substrate, characterized in that a scale pattern of a desired shape is formed around the area of the circuit pattern drawn on the photomask.
間隔をもって沿うような輪郭線を複数形成すると共に、
前記輪郭線に対して直交する横線および縦線を複数形成
してなるものであることを特徴とする特許請求の範囲第
１項記載のホトマスク。(2) The scale pattern forms a plurality of contour lines along the periphery of the area at predetermined intervals, and
2. The photomask according to claim 1, wherein a plurality of horizontal lines and vertical lines are formed perpendicularly to the contour line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59207620A JPS6184649A (en) | 1984-10-02 | 1984-10-02 | Photomask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59207620A JPS6184649A (en) | 1984-10-02 | 1984-10-02 | Photomask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6184649A true JPS6184649A (en) | 1986-04-30 |
Family
ID=16542807
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59207620A Pending JPS6184649A (en) | 1984-10-02 | 1984-10-02 | Photomask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6184649A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5727461A (en) * | 1997-02-06 | 1998-03-17 | Amtx, Inc. | Method of forming fiducials, and stencils containing such fiducials |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5555340A (en) * | 1978-10-18 | 1980-04-23 | Nec Kyushu Ltd | Photo mask for automatically aligning exposure and automatically aligning exposure method |
| JPS5983167A (en) * | 1982-11-04 | 1984-05-14 | Oki Electric Ind Co Ltd | Registering method of multilayer printing |
-
1984
- 1984-10-02 JP JP59207620A patent/JPS6184649A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5555340A (en) * | 1978-10-18 | 1980-04-23 | Nec Kyushu Ltd | Photo mask for automatically aligning exposure and automatically aligning exposure method |
| JPS5983167A (en) * | 1982-11-04 | 1984-05-14 | Oki Electric Ind Co Ltd | Registering method of multilayer printing |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5727461A (en) * | 1997-02-06 | 1998-03-17 | Amtx, Inc. | Method of forming fiducials, and stencils containing such fiducials |
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