JPS5526620A - Electronic beam exposure device - Google Patents

Electronic beam exposure device

Info

Publication number
JPS5526620A
JPS5526620A JP9865478A JP9865478A JPS5526620A JP S5526620 A JPS5526620 A JP S5526620A JP 9865478 A JP9865478 A JP 9865478A JP 9865478 A JP9865478 A JP 9865478A JP S5526620 A JPS5526620 A JP S5526620A
Authority
JP
Japan
Prior art keywords
slit
square
pattern
lines
electronic beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9865478A
Other languages
Japanese (ja)
Inventor
Yutaka Hitai
Nobuo Okuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9865478A priority Critical patent/JPS5526620A/en
Publication of JPS5526620A publication Critical patent/JPS5526620A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To scribe oblique pattern at a high speed by shaping electronic beam using a first slit having a square pattern and a second slit of a specific pattern. CONSTITUTION:A first slit 10 is located at a position 2 and has a square bore 11 the length of each sides of which is represented by (a). A second slit 12 is provided at a position 3 and has a bore 13 which is formed by combining a square 131 having a side length (a) and a plurality of right-angled isosceles triangles 132... 135. The beam which has passed through these two slits can take five patterns including a square and four right-angled isosceles triangles. Unsually, the pattern of IC mask has lines parallel to X or Y-axes and lines of 45 deg. inclination to these axes. This device permits to scribe the lines of 45 deg. inclination at a high speed by combining basic patterns H,U,L,D,R. According to this arrangement, it is not necessary to prepare a large variety of slits. In addition, the beam deflection can easily be achieved because only the controls corresponding to the number of the basic patterns are required.
JP9865478A 1978-08-15 1978-08-15 Electronic beam exposure device Pending JPS5526620A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9865478A JPS5526620A (en) 1978-08-15 1978-08-15 Electronic beam exposure device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9865478A JPS5526620A (en) 1978-08-15 1978-08-15 Electronic beam exposure device

Publications (1)

Publication Number Publication Date
JPS5526620A true JPS5526620A (en) 1980-02-26

Family

ID=14225486

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9865478A Pending JPS5526620A (en) 1978-08-15 1978-08-15 Electronic beam exposure device

Country Status (1)

Country Link
JP (1) JPS5526620A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6030131A (en) * 1983-07-29 1985-02-15 Toshiba Corp Electron-beam exposure device
JPH01112729A (en) * 1987-10-26 1989-05-01 Fujitsu Ltd Electronic beam exposure
JPH01175737A (en) * 1987-12-29 1989-07-12 Toshiba Corp Charged beam lithography
US5256881A (en) * 1991-06-12 1993-10-26 Fujitsu Limited Mask and charged particle beam exposure method using the mask
US7618219B2 (en) 2005-10-18 2009-11-17 Osg Corporation Ball endmill

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6030131A (en) * 1983-07-29 1985-02-15 Toshiba Corp Electron-beam exposure device
JPH01112729A (en) * 1987-10-26 1989-05-01 Fujitsu Ltd Electronic beam exposure
JPH01175737A (en) * 1987-12-29 1989-07-12 Toshiba Corp Charged beam lithography
US5256881A (en) * 1991-06-12 1993-10-26 Fujitsu Limited Mask and charged particle beam exposure method using the mask
US7618219B2 (en) 2005-10-18 2009-11-17 Osg Corporation Ball endmill

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