CN108333881A - A kind of splicing adjustment method applied to write-through exposure machine - Google Patents

A kind of splicing adjustment method applied to write-through exposure machine Download PDF

Info

Publication number
CN108333881A
CN108333881A CN201810060266.3A CN201810060266A CN108333881A CN 108333881 A CN108333881 A CN 108333881A CN 201810060266 A CN201810060266 A CN 201810060266A CN 108333881 A CN108333881 A CN 108333881A
Authority
CN
China
Prior art keywords
exposure
write
adjacent
mark points
exposure machine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
CN201810060266.3A
Other languages
Chinese (zh)
Inventor
张玉喆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hefei Xinqi Microelectronic Equipment Co Ltd
Original Assignee
Hefei Xinqi Microelectronic Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hefei Xinqi Microelectronic Equipment Co Ltd filed Critical Hefei Xinqi Microelectronic Equipment Co Ltd
Priority to CN201810060266.3A priority Critical patent/CN108333881A/en
Publication of CN108333881A publication Critical patent/CN108333881A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2051Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Structure Of Printed Boards (AREA)

Abstract

The present invention provides a kind of splicing adjustment method applied to write-through exposure machine, including:Design a kind of suitable exposure figure;Using relational theory design value in position between field as position relation value between initial field;A printed circuit board is placed on exposure table top;Exposure figure is exposed on printed circuit board;Measure the coordinate and record of each MARK points;Calculate offset component of the qualified two adjacent MARK points along X, Y both direction;The offset component of both direction is judged whether in preset indication range, if so, being repeated the above steps position relation value between current field as position relation value between final field if it is not, then compensating offset component into position relation value between current field.The present invention carries out automatic measurement by means of the high precision measuring system of write-through exposure machine itself and computes and compensates for verifying by designing a kind of suitable exposure figure, and debug time is greatly saved, effectively increases production efficiency.

Description

A kind of splicing adjustment method applied to write-through exposure machine
Technical field
It is specifically a kind of applied to write-through exposure machine the present invention relates to write-through exposure machine machine debugging technical field Splice adjustment method.
Background technology
Write-through exposure machine is the required facility in printed circuit board (pcb board) production process, is a kind of utilization figure hair The mask plate of raw device substitution conventional lithography machine, and by DMD reflect the laser of specific wavelength in dry film or by photoresist it is anti- The equipment that exposure figure should be transferred directly on printed circuit board.
Write-through exposure machine saves the time for making the film and expense compared with conventional exposure machine, can improve printing electricity The production capacity and yield of road plate producer.But write-through exposure machine is in process of production, and splicing debugging needs to consume manpower and needs It is equipped with high-precision microscope, is measured time-consuming.
Invention content
The purpose of the present invention is to provide a kind of splicing adjustment methods applied to write-through exposure machine, to solve write-through The exposure machine splicing debugging link problem that time-consuming, debugging flow is cumbersome.
The technical scheme is that:
A kind of splicing adjustment method applied to write-through exposure machine, this approach includes the following steps:
(1) a kind of exposure figure consistent with the maximum exposure size of write-through exposure machine to be debugged, the exposure are designed The content of figure is that there are one unique marks for each MARK points tool in equidistant MARK dot matrixs and the matrix;
(2) position relational theory design value between the field of each pair of adjacent exposure subelement of write-through exposure machine to be debugged is made The position relation value between its initial field;
(3) printed circuit board is placed on exposure table top;
(4) exposure figure is exposed on the printed circuit board using write-through exposure machine to be debugged;
(5) using the measuring system of write-through exposure machine to be debugged to MARK dot matrixs exposed on printed circuit board It measures, records the centre coordinate of each MARK points;
(6) for each pair of adjacent exposure subelement, this is optionally belonging respectively to two exposures in adjacent exposure subelement Subelement exposes and the identical two adjacent MARK points of row coordinate, calculates described two adjacent MARK points along X, the offset of Y-direction Component Δ x, Δ y;
(7) Δ x, Δ y are judged whether in preset indication range, if it is not, (8) are thened follow the steps, if so, executing Step (9);
(8) it Δ x, Δ y being compensated the current field to this between adjacent exposure subelement in the relation value of position, then repeats Step (3) is to step (7);
(9) position relationship the position relation value field final as its current field using this between adjacent exposure subelement Value.
The splicing adjustment method applied to write-through exposure machine, in step (1), the MARK points are diameter 1mm Dot.
The splicing adjustment method applied to write-through exposure machine, in step (6), calculated using following formula described in Two adjacent MARK points are along X, offset component Δ x, the Δ y of Y-direction:
Δ x=X(i+1,j)-X(i,j)-d
Δ y=Y(i+1,j)-Y(i,j)
Wherein, X(i+1,j)、X(i,j)The centre coordinate of described two adjacent MARK points in X direction, Y are indicated respectively(i+1,j)、 Y(i,j)Indicate that centre coordinate of described two adjacent MARK points along Y-direction, d indicate the theory of described two adjacent MARK points respectively Centre-to-centre spacing.
Beneficial effects of the present invention are:
As shown from the above technical solution, the present invention is by designing a kind of suitable exposure figure, and by means of write-through The high precision measuring system of exposure machine itself carries out automatic measurement and computes and compensates for verifying, and write-through exposure machine is greatly saved Debug time effectively increases the production efficiency of write-through exposure machine.
Description of the drawings
Fig. 1 is flow chart of the method for the present invention;
Fig. 2 is the exposure figure exemplary plot that the present invention designs;
Fig. 3 is the graphical examples that the present invention is exposed on printed circuit board;
Fig. 4 is the schematic diagram that X, Y-direction offset component are calculated in the present invention.
Specific implementation mode
It further illustrates the present invention in the following with reference to the drawings and specific embodiments.
As shown in Figure 1, a kind of splicing adjustment method applied to write-through exposure machine, includes the following steps:
S1, a kind of exposure figure consistent with the maximum exposure size of write-through exposure machine to be debugged of design, such as Fig. 2 institutes Show, the content of exposure figure is equidistant circle MARK dot matrixs, shares m rows n row.Each the diameter of MARK points is 1mm, and each MARK points are there are one unique mark, such as (i, j), i=1,2 ..., m represent current line, j=1, and 2 ..., Forefront is worked as in n representatives.The theoretical center of two adjacent MARK points in same row/column is away from for d.
As shown in figure 3, the MARK points that coordinate is (i, j) and (i+1, j) (j=1,2 ..., n) are two adjacent exposures respectively The figure that subelement exposes out, referred to herein as between field at stitching position.Since actual exposure subelement is there are installation error, So the theoretical center that configures with operating center distance away from having deviation when exposure.The MARK points of right side broken line representation are theory in Fig. 3 The MARK points of position, solid line are physical location.
S2, by write-through exposure machine to be debugged exposure subelement field between position relational theory design value (X0,Y0) conduct Position relation value between initial field, the present embodiment are illustrated with two exposure subelements, then X0Indicate that second exposure is single Member exposes the theoretical center of subelement in X direction away from Y relative to first0Indicate second exposure subelement relative to first It is a exposure subelement along Y-direction theoretical center away from.
S3, one piece of printed circuit board for being covered with certain emulsion is placed on exposure table top.
S4, the suitable exposure dose of exposure figure designed in step S1 is exposed using write-through exposure machine to be debugged On light to printed circuit board.Ensure that vacuum suction is good between printed circuit board and exposure table top when exposure, edges of boards surrounding is without warpage.
S5, using the measuring system of write-through exposure machine to be debugged to MARK dot matrixs exposed on printed circuit board It measures, records the centre coordinate (C of each MARK pointsi,Cj).Ensure the survey of write-through exposure machine to be debugged before this Amount system is adapted to be finished, and index is met.Measurement and record in the step are to be performed fully automatic.
S6, as shown in figure 4, the MARK points according to step S5 record centre coordinate, using following formula, calculating belongs to respectively In two adjacent exposure subelement exposures and the identical two adjacent MARK points of row coordinate (an optional row) are along X, Y both direction Offset component:
Δ x=X(i+1,j)-X(i,j)-d
Δ y=Y(i+1,j)-Y(i,j)
Wherein, Δ x indicate be belonging respectively to two adjacent exposure subelements exposure two adjacent MARK points (i+1, j) and The offset component of (i, j) in X direction, Δ y indicate two adjacent MARK points for being belonging respectively to the exposure of two adjacent exposure subelements (i+1, j) and (i, j) is along the offset component of Y-direction, X(i+1,j)Indicate the actual measurement centre coordinate of MARK points (i+1, j) in X direction, Y(i+1,j)Indicate MARK points (i+1, j) along the actual measurement centre coordinate of Y-direction, X(i,j)Indicate the actual measurement of MARK points (i, j) in X direction Centre coordinate, Y(i,j)Indicate actual measurement centre coordinate of the MARK points (i, j) along Y-direction.Due to a shared n row, herein the value of j from 1,2 ..., optional one in n.
S7, Δ x, Δ y are judged whether in preset indication range, if it is not, S8 is thened follow the steps, if so, executing Step S9.
S8, Δ x, Δ y are compensated into position relation value between current field, repeats step S3~S7.Wherein, by Δ x, Δ Y is compensated into position relation value between current field to be obtained using cumulative method, such as in first time iterative process, current field Between position relation value between initial field position relation value on the spot between position relational theory design value (X0,Y0), it uses at this time following Formula obtains position relation value (X between new field1,Y1), it is used further to next iteration, and so on:
X1=X0+Δx
Y1=Y0+Δy
S9, using position relation value between current field as position relation value between final field, splicing debugging is completed.
Since the present embodiment is illustrated with two exposure subelements, that is, only a pair of of adjacent exposure is single Member, in practical applications, the number for exposing subelement are unlimited, that is, there are several to adjacent exposure subelement, then for every To adjacent exposure subelement, operated respectively according to above-mentioned steps.
In conclusion the present invention utilizes the measuring system of write-through exposure machine itself precision to be debugged, a kind of exposure is designed Figure is handled for debugging, and by debugging flow with software automation, is achieved the effect that accurate, quick, inexpensive.
Embodiment described above is only that the preferred embodiment of the present invention is described, not to the model of the present invention It encloses and is defined, under the premise of not departing from design spirit of the present invention, technical side of the those of ordinary skill in the art to the present invention The various modifications and improvement that case is made should all be fallen into the protection domain of claims of the present invention determination.

Claims (3)

1. a kind of splicing adjustment method applied to write-through exposure machine, which is characterized in that this approach includes the following steps:
(1) a kind of exposure figure consistent with the maximum exposure size of write-through exposure machine to be debugged, the exposure figure are designed Content be that there are one unique marks for each MARK points tool in equidistant MARK dot matrixs and the matrix;
(2) using position relational theory design value between the field of each pair of adjacent exposure subelement of write-through exposure machine to be debugged as it Position relation value between initial field;
(3) printed circuit board is placed on exposure table top;
(4) exposure figure is exposed on the printed circuit board using write-through exposure machine to be debugged;
(5) MARK dot matrixs exposed on printed circuit board are carried out using the measuring system of write-through exposure machine to be debugged It measures, records the centre coordinate of each MARK points;
(6) for each pair of adjacent exposure subelement, it is single to two exposure in adjacent exposure subelement to be optionally belonging respectively to this Member exposure and the identical two adjacent MARK points of row coordinate calculate described two adjacent MARK points along X, the offset component of Y-direction Δx、Δy;
(7) Δ x, Δ y are judged whether in preset indication range, if it is not, (8) are thened follow the steps, if so, thening follow the steps (9);
(8) Δ x, Δ y being compensated the current field to this between adjacent exposure subelement in the relation value of position, then repeatedly step (3) to step (7);
(9) position relation value the position relation value field final as its current field using this between adjacent exposure subelement.
2. the splicing adjustment method according to claim 1 applied to write-through exposure machine, which is characterized in that step (1) In, the MARK points are the dot of diameter 1mm.
3. the splicing adjustment method according to claim 1 applied to write-through exposure machine, which is characterized in that step (6) In, described two adjacent MARK points are calculated along X, offset component Δ x, the Δ y of Y-direction using following formula:
Δ x=X(i+1,j)-X(i,j)-d
Δ y=Y(i+1,j)-Y(i,j)
Wherein, X(i+1,j)、X(i,j)The centre coordinate of described two adjacent MARK points in X direction, Y are indicated respectively(i+1,j)、Y(i,j)Point Do not indicate that centre coordinate of described two adjacent MARK points along Y-direction, d indicate the theoretical center of described two adjacent MARK points Away from.
CN201810060266.3A 2018-01-22 2018-01-22 A kind of splicing adjustment method applied to write-through exposure machine Withdrawn CN108333881A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201810060266.3A CN108333881A (en) 2018-01-22 2018-01-22 A kind of splicing adjustment method applied to write-through exposure machine

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201810060266.3A CN108333881A (en) 2018-01-22 2018-01-22 A kind of splicing adjustment method applied to write-through exposure machine

Publications (1)

Publication Number Publication Date
CN108333881A true CN108333881A (en) 2018-07-27

Family

ID=62925555

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201810060266.3A Withdrawn CN108333881A (en) 2018-01-22 2018-01-22 A kind of splicing adjustment method applied to write-through exposure machine

Country Status (1)

Country Link
CN (1) CN108333881A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109283804A (en) * 2018-11-14 2019-01-29 江苏友迪激光科技有限公司 A method of improving direct write exposure machine exposure accuracy and harmomegathus measurement accuracy
CN109597224A (en) * 2018-11-27 2019-04-09 深圳市华星光电技术有限公司 Mosaic splices product splice region method of adjustment and device
CN111983901A (en) * 2020-08-28 2020-11-24 合肥众群光电科技有限公司 Splicing debugging device and method based on platform position signal
CN114488704A (en) * 2021-12-15 2022-05-13 惠州市金百泽电路科技有限公司 Method for detecting and correcting graph splicing error of photoetching machine based on DMD

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090262319A1 (en) * 2008-03-10 2009-10-22 Hiroyasu Matsuura Maskless exposure method
CN102902164A (en) * 2012-09-19 2013-01-30 天津芯硕精密机械有限公司 Two-dimensional mosaic processing method for direct writing lithography machine in step printing
KR20140066609A (en) * 2012-11-23 2014-06-02 엘지디스플레이 주식회사 Methods for aligning a maskless exposure apparatus
CN104281013A (en) * 2014-09-29 2015-01-14 天津津芯微电子科技有限公司 Inclined scanning stitching method of write-through lithography system
CN106647180A (en) * 2016-11-28 2017-05-10 湖北凯昌光电科技有限公司 Error correction and compensation method and device based on calibration board in direct-writing exposure machine

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090262319A1 (en) * 2008-03-10 2009-10-22 Hiroyasu Matsuura Maskless exposure method
CN102902164A (en) * 2012-09-19 2013-01-30 天津芯硕精密机械有限公司 Two-dimensional mosaic processing method for direct writing lithography machine in step printing
KR20140066609A (en) * 2012-11-23 2014-06-02 엘지디스플레이 주식회사 Methods for aligning a maskless exposure apparatus
CN104281013A (en) * 2014-09-29 2015-01-14 天津津芯微电子科技有限公司 Inclined scanning stitching method of write-through lithography system
CN106647180A (en) * 2016-11-28 2017-05-10 湖北凯昌光电科技有限公司 Error correction and compensation method and device based on calibration board in direct-writing exposure machine

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109283804A (en) * 2018-11-14 2019-01-29 江苏友迪激光科技有限公司 A method of improving direct write exposure machine exposure accuracy and harmomegathus measurement accuracy
CN109597224A (en) * 2018-11-27 2019-04-09 深圳市华星光电技术有限公司 Mosaic splices product splice region method of adjustment and device
CN109597224B (en) * 2018-11-27 2021-04-23 Tcl华星光电技术有限公司 Mosaic splicing product splicing area adjusting method and device
CN111983901A (en) * 2020-08-28 2020-11-24 合肥众群光电科技有限公司 Splicing debugging device and method based on platform position signal
CN114488704A (en) * 2021-12-15 2022-05-13 惠州市金百泽电路科技有限公司 Method for detecting and correcting graph splicing error of photoetching machine based on DMD
CN114488704B (en) * 2021-12-15 2024-04-02 惠州市金百泽电路科技有限公司 Method for detecting and correcting pattern splicing error of photoetching machine based on DMD

Similar Documents

Publication Publication Date Title
CN108333881A (en) A kind of splicing adjustment method applied to write-through exposure machine
CN108072319A (en) The Fast Calibration system and scaling method of a kind of motion platform
CN109870883A (en) A kind of position compensation method of the scaling board for write-through exposure machine
CN105241399A (en) Method of measuring dynamic flatness of precision positioning platform
JP2007504664A (en) Structure for Pattern Recognition and Method for X Initiative Layout Design
CN105629678A (en) Orthogonality determination method for direct writing system motion platform
CN106154768A (en) A kind of ic substrate re-expose method based on mask plate
CN102736431B (en) A kind of measurement mechanism and measuring method thereof measuring motion precision of motion bench
CN112987516B (en) Method for semiconductor photoetching process
US6309944B1 (en) Overlay matching method which eliminates alignment induced errors and optimizes lens matching
CN108490746A (en) A kind of photoetching alignment mark and its alignment methods
JP5166916B2 (en) Apparatus for superimposing patterns and device manufacturing method
CN106227002A (en) A kind of method improving the efficiency adjusting splicing and multiplying power size
CN103050490B (en) Automatic design method of scribing slot frame
CN215813729U (en) Monitoring light hood for correcting position precision of light shielding plate
CN103676464A (en) Photolithographic pattern for modeling and measurement method thereof
CN204102865U (en) A kind of to locating tab assembly structure
CN114137799B (en) Method for calibrating inner layer target of laser direct imaging equipment
CN102591158A (en) Method for accurately measuring WEE (wafer edge exclusion) width
CN109656105A (en) A kind of method of big Range Ultraprecise two-dimension moving platform position precision compensation
JP2002057103A (en) Exposure method for manufacturing semiconductor device
CN108735645A (en) Wafer alignment method and wafer alignment device
CN101140423B (en) Transmission aligning mark combination used for mask alignment and mask alignment method thereof
CN102097284A (en) Control method and device for making alignment marks
CN105446090B (en) It is directed at measurement method

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WW01 Invention patent application withdrawn after publication
WW01 Invention patent application withdrawn after publication

Application publication date: 20180727