JPS5713760A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS5713760A
JPS5713760A JP8937480A JP8937480A JPS5713760A JP S5713760 A JPS5713760 A JP S5713760A JP 8937480 A JP8937480 A JP 8937480A JP 8937480 A JP8937480 A JP 8937480A JP S5713760 A JPS5713760 A JP S5713760A
Authority
JP
Japan
Prior art keywords
type
electrode
region
base
phosphorus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8937480A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0230573B2 (enrdf_load_stackoverflow
Inventor
Shinichi Inoue
Nobuo Toyokura
Hajime Ishikawa
Hiroshi Horie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8937480A priority Critical patent/JPS5713760A/ja
Publication of JPS5713760A publication Critical patent/JPS5713760A/ja
Publication of JPH0230573B2 publication Critical patent/JPH0230573B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
JP8937480A 1980-06-30 1980-06-30 Semiconductor device and manufacture thereof Granted JPS5713760A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8937480A JPS5713760A (en) 1980-06-30 1980-06-30 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8937480A JPS5713760A (en) 1980-06-30 1980-06-30 Semiconductor device and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS5713760A true JPS5713760A (en) 1982-01-23
JPH0230573B2 JPH0230573B2 (enrdf_load_stackoverflow) 1990-07-06

Family

ID=13968906

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8937480A Granted JPS5713760A (en) 1980-06-30 1980-06-30 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5713760A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59106150A (ja) * 1982-12-02 1984-06-19 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 集積回路及びその製造方法
JPS6053077A (ja) * 1983-07-29 1985-03-26 モトローラ　インコーポレーテッド ケイ化物バイポ−ラトランジスタ及び同トランジスタの製造方法
JPS61225838A (ja) * 1985-03-29 1986-10-07 Fujitsu Ltd 電極配線の形成方法
JPS6233457A (ja) * 1985-08-06 1987-02-13 Nec Corp 半導体集積回路装置
JPH0235720A (ja) * 1988-07-26 1990-02-06 Matsushita Electric Ind Co Ltd Ｍｏｓ型半導体装置の製造方法
US6004855A (en) * 1988-04-11 1999-12-21 Synergy Semiconductor Corporation Process for producing a high performance bipolar structure

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5036343A (enrdf_load_stackoverflow) * 1973-08-04 1975-04-05
JPS5568620A (en) * 1978-11-17 1980-05-23 Hitachi Ltd Impurity diffusion

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5036343A (enrdf_load_stackoverflow) * 1973-08-04 1975-04-05
JPS5568620A (en) * 1978-11-17 1980-05-23 Hitachi Ltd Impurity diffusion

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59106150A (ja) * 1982-12-02 1984-06-19 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 集積回路及びその製造方法
JPS6053077A (ja) * 1983-07-29 1985-03-26 モトローラ　インコーポレーテッド ケイ化物バイポ−ラトランジスタ及び同トランジスタの製造方法
JPS61225838A (ja) * 1985-03-29 1986-10-07 Fujitsu Ltd 電極配線の形成方法
JPS6233457A (ja) * 1985-08-06 1987-02-13 Nec Corp 半導体集積回路装置
US6004855A (en) * 1988-04-11 1999-12-21 Synergy Semiconductor Corporation Process for producing a high performance bipolar structure
JPH0235720A (ja) * 1988-07-26 1990-02-06 Matsushita Electric Ind Co Ltd Ｍｏｓ型半導体装置の製造方法

Also Published As

Publication number Publication date
JPH0230573B2 (enrdf_load_stackoverflow) 1990-07-06

Similar Documents

Publication Publication Date Title
GB1477083A (en) Insulated gate field effect transistors
JPS5467778A (en) Production of semiconductor device
JPS57196573A (en) Manufacture of mos type semiconductor device
JPS5713760A (en) Semiconductor device and manufacture thereof
EP0684632A3 (en) Method of forming a film at low temperature for a semiconductor device
JPS5627965A (en) Manufacture of semiconductor device
JPS572519A (en) Manufacture of semiconductor device
JPS54107270A (en) Semiconductor device and its production
JPS55107229A (en) Method of manufacturing semiconductor device
JPS55132053A (en) Manufacture of semiconductor device
JPS5550661A (en) Insulated gate type field effect semiconductor device
JPS55151332A (en) Fabricating method of semiconductor device
JPS53144687A (en) Production of semiconductor device
JPS56135973A (en) Manufacture of semiconductor device
JPS5627923A (en) Manufacture of semiconductor device
JPS5522835A (en) Manufacturing of transistor
JPS5754366A (en) Manufacture of semiconductor device
JPS57157541A (en) Manufacture of semiconductor device
JPS5623770A (en) Manufacture of semiconductor device
JPS56142631A (en) Manufacture of semiconductor device
JPS57162460A (en) Manufacture of semiconductor device
JPS57206063A (en) Semiconductor substrate and manufacture therefor
JPS5568650A (en) Manufacturing method of semiconductor device
JPS5753958A (ja) Handotaisochi
JPS6474754A (en) Semiconductor device