JPH0230573B2 - - Google Patents
Info
- Publication number
- JPH0230573B2 JPH0230573B2 JP55089374A JP8937480A JPH0230573B2 JP H0230573 B2 JPH0230573 B2 JP H0230573B2 JP 55089374 A JP55089374 A JP 55089374A JP 8937480 A JP8937480 A JP 8937480A JP H0230573 B2 JPH0230573 B2 JP H0230573B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- conductivity type
- region
- emitter
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8937480A JPS5713760A (en) | 1980-06-30 | 1980-06-30 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8937480A JPS5713760A (en) | 1980-06-30 | 1980-06-30 | Semiconductor device and manufacture thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5713760A JPS5713760A (en) | 1982-01-23 |
JPH0230573B2 true JPH0230573B2 (enrdf_load_stackoverflow) | 1990-07-06 |
Family
ID=13968906
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8937480A Granted JPS5713760A (en) | 1980-06-30 | 1980-06-30 | Semiconductor device and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5713760A (enrdf_load_stackoverflow) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4521952A (en) * | 1982-12-02 | 1985-06-11 | International Business Machines Corporation | Method of making integrated circuits using metal silicide contacts |
EP0133339A3 (en) * | 1983-07-29 | 1985-03-20 | Trw Inc. | Silicide bipolar transistor and process for making the transistor |
JPS61225838A (ja) * | 1985-03-29 | 1986-10-07 | Fujitsu Ltd | 電極配線の形成方法 |
JPS6233457A (ja) * | 1985-08-06 | 1987-02-13 | Nec Corp | 半導体集積回路装置 |
US6004855A (en) * | 1988-04-11 | 1999-12-21 | Synergy Semiconductor Corporation | Process for producing a high performance bipolar structure |
JPH0235720A (ja) * | 1988-07-26 | 1990-02-06 | Matsushita Electric Ind Co Ltd | Mos型半導体装置の製造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5036343A (enrdf_load_stackoverflow) * | 1973-08-04 | 1975-04-05 | ||
JPS5568620A (en) * | 1978-11-17 | 1980-05-23 | Hitachi Ltd | Impurity diffusion |
-
1980
- 1980-06-30 JP JP8937480A patent/JPS5713760A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5713760A (en) | 1982-01-23 |
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