JPS57133636A - Film forming device utilizing plasma at low temperature - Google Patents

Film forming device utilizing plasma at low temperature

Info

Publication number
JPS57133636A
JPS57133636A JP1898681A JP1898681A JPS57133636A JP S57133636 A JPS57133636 A JP S57133636A JP 1898681 A JP1898681 A JP 1898681A JP 1898681 A JP1898681 A JP 1898681A JP S57133636 A JPS57133636 A JP S57133636A
Authority
JP
Japan
Prior art keywords
plasma
cylinder
end plate
lead
microwave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1898681A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6367332B2 (enrdf_load_stackoverflow
Inventor
Seitaro Matsuo
Hideo Yoshihara
Shinichi Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP1898681A priority Critical patent/JPS57133636A/ja
Priority to CA000375908A priority patent/CA1159012A/en
Priority to US06/257,616 priority patent/US4401054A/en
Priority to DE3117252A priority patent/DE3117252C2/de
Priority to FR8108726A priority patent/FR2481838A1/fr
Priority to GB8113505A priority patent/GB2076587B/en
Priority to NL8102172A priority patent/NL191267C/xx
Publication of JPS57133636A publication Critical patent/JPS57133636A/ja
Publication of JPS6367332B2 publication Critical patent/JPS6367332B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
JP1898681A 1980-05-02 1981-02-13 Film forming device utilizing plasma at low temperature Granted JPS57133636A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP1898681A JPS57133636A (en) 1981-02-13 1981-02-13 Film forming device utilizing plasma at low temperature
CA000375908A CA1159012A (en) 1980-05-02 1981-04-22 Plasma deposition apparatus
US06/257,616 US4401054A (en) 1980-05-02 1981-04-27 Plasma deposition apparatus
DE3117252A DE3117252C2 (de) 1980-05-02 1981-04-30 Plasmaauftragvorrichtung
FR8108726A FR2481838A1 (fr) 1980-05-02 1981-04-30 Appareil de depot de plasma pour former une pellicule sur un substrat
GB8113505A GB2076587B (en) 1980-05-02 1981-05-01 Plasma deposition apparatus
NL8102172A NL191267C (nl) 1980-05-02 1981-05-01 Inrichting voor het met plasma bewerken van een substraat.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1898681A JPS57133636A (en) 1981-02-13 1981-02-13 Film forming device utilizing plasma at low temperature

Publications (2)

Publication Number Publication Date
JPS57133636A true JPS57133636A (en) 1982-08-18
JPS6367332B2 JPS6367332B2 (enrdf_load_stackoverflow) 1988-12-26

Family

ID=11986903

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1898681A Granted JPS57133636A (en) 1980-05-02 1981-02-13 Film forming device utilizing plasma at low temperature

Country Status (1)

Country Link
JP (1) JPS57133636A (enrdf_load_stackoverflow)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60115235A (ja) * 1983-11-26 1985-06-21 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体基板上への絶縁膜形成方法
JPS60116781A (ja) * 1983-11-28 1985-06-24 Kyocera Corp 高硬度窒化ホウ素膜の製造方法
JPS60116780A (ja) * 1983-11-28 1985-06-24 Kyocera Corp 高硬度窒化ホウ素膜の製造方法
JPS6147628A (ja) * 1984-08-13 1986-03-08 Nippon Telegr & Teleph Corp <Ntt> 半導体薄膜形成法
JPS6380522A (ja) * 1986-09-24 1988-04-11 Nec Corp 励起種ｃｖｄ装置
JPS63227777A (ja) * 1987-03-17 1988-09-22 Nippon Telegr & Teleph Corp <Ntt> 薄膜形成装置
JPS6455871A (en) * 1987-08-26 1989-03-02 Sumitomo Electric Industries Manufacture of self-alignment type gate electrode
US5069928A (en) * 1988-02-01 1991-12-03 Canon Kabushiki Kaisha Microwave chemical vapor deposition apparatus and feedback control method
US5296036A (en) * 1990-11-29 1994-03-22 Canon Kabushiki Kaisha Apparatus for continuously forming a large area functional deposit film including microwave transmissive member transfer mean
EP0406690A3 (en) * 1989-06-28 1994-11-23 Canon Kk Process for continuously forming a large area functional deposited film by microwave pcvd method and an apparatus suitable for practicing the same
US5397395A (en) * 1990-10-29 1995-03-14 Canon Kabushiki Kaisha Method of continuously forming a large area functional deposited film by microwave PCVD and apparatus for the same
US5514217A (en) * 1990-11-16 1996-05-07 Canon Kabushiki Kaisha Microwave plasma CVD apparatus with a deposition chamber having a circumferential wall comprising a curved moving substrate web and a microwave applicator means having a specific dielectric member on the exterior thereof
US5629054A (en) * 1990-11-20 1997-05-13 Canon Kabushiki Kaisha Method for continuously forming a functional deposit film of large area by micro-wave plasma CVD method
US5976257A (en) * 1991-01-23 1999-11-02 Canon Kabushiki Kaisha Apparatus for continuously forming a large area deposited film by means of microwave plasma CVD process
US6096389A (en) * 1995-09-14 2000-08-01 Canon Kabushiki Kaisha Method and apparatus for forming a deposited film using a microwave CVD process
JP2019214033A (ja) * 2018-06-14 2019-12-19 株式会社エスイー 原料をマイクロ波表面波プラズマで処理して原料と異なる生成物を得る製造装置及び製造方法
JP2021037511A (ja) * 2018-06-14 2021-03-11 株式会社エスイー 原料をマイクロ波表面波プラズマで処理して原料と異なる生成物を得る製造装置及び製造方法
CN114551207A (zh) * 2017-02-03 2022-05-27 应用材料公司 用于等离子体均匀度的径向和方位控制的系统和方法

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60115235A (ja) * 1983-11-26 1985-06-21 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体基板上への絶縁膜形成方法
JPS60116781A (ja) * 1983-11-28 1985-06-24 Kyocera Corp 高硬度窒化ホウ素膜の製造方法
JPS60116780A (ja) * 1983-11-28 1985-06-24 Kyocera Corp 高硬度窒化ホウ素膜の製造方法
JPS6147628A (ja) * 1984-08-13 1986-03-08 Nippon Telegr & Teleph Corp <Ntt> 半導体薄膜形成法
JPS6380522A (ja) * 1986-09-24 1988-04-11 Nec Corp 励起種ｃｖｄ装置
JPS63227777A (ja) * 1987-03-17 1988-09-22 Nippon Telegr & Teleph Corp <Ntt> 薄膜形成装置
JPS6455871A (en) * 1987-08-26 1989-03-02 Sumitomo Electric Industries Manufacture of self-alignment type gate electrode
US5069928A (en) * 1988-02-01 1991-12-03 Canon Kabushiki Kaisha Microwave chemical vapor deposition apparatus and feedback control method
US6253703B1 (en) * 1988-02-01 2001-07-03 Canon Kabushiki Kaisha Microwave chemical vapor deposition apparatus
US5714010A (en) * 1989-06-28 1998-02-03 Canon Kabushiki Kaisha Process for continuously forming a large area functional deposited film by a microwave PCVD method and an apparatus suitable for practicing the same
US5510151A (en) * 1989-06-28 1996-04-23 Canon Kabushiki Kaisha Continuous film-forming process using microwave energy in a moving substrate web functioning as a substrate and plasma generating space
EP0406690A3 (en) * 1989-06-28 1994-11-23 Canon Kk Process for continuously forming a large area functional deposited film by microwave pcvd method and an apparatus suitable for practicing the same
US5523126A (en) * 1990-10-29 1996-06-04 Canon Kabushiki Kaisha Method of continuously forming a large area functional deposited film by microwave PCVD
US5397395A (en) * 1990-10-29 1995-03-14 Canon Kabushiki Kaisha Method of continuously forming a large area functional deposited film by microwave PCVD and apparatus for the same
US5514217A (en) * 1990-11-16 1996-05-07 Canon Kabushiki Kaisha Microwave plasma CVD apparatus with a deposition chamber having a circumferential wall comprising a curved moving substrate web and a microwave applicator means having a specific dielectric member on the exterior thereof
US5629054A (en) * 1990-11-20 1997-05-13 Canon Kabushiki Kaisha Method for continuously forming a functional deposit film of large area by micro-wave plasma CVD method
US5296036A (en) * 1990-11-29 1994-03-22 Canon Kabushiki Kaisha Apparatus for continuously forming a large area functional deposit film including microwave transmissive member transfer mean
US5976257A (en) * 1991-01-23 1999-11-02 Canon Kabushiki Kaisha Apparatus for continuously forming a large area deposited film by means of microwave plasma CVD process
US6096389A (en) * 1995-09-14 2000-08-01 Canon Kabushiki Kaisha Method and apparatus for forming a deposited film using a microwave CVD process
CN114551207A (zh) * 2017-02-03 2022-05-27 应用材料公司 用于等离子体均匀度的径向和方位控制的系统和方法
JP2019214033A (ja) * 2018-06-14 2019-12-19 株式会社エスイー 原料をマイクロ波表面波プラズマで処理して原料と異なる生成物を得る製造装置及び製造方法
WO2019239765A1 (ja) * 2018-06-14 2019-12-19 株式会社エスイー 原料をマイクロ波表面波プラズマで処理して原料と異なる生成物を得る製造装置及び製造方法
JP2021037511A (ja) * 2018-06-14 2021-03-11 株式会社エスイー 原料をマイクロ波表面波プラズマで処理して原料と異なる生成物を得る製造装置及び製造方法

Also Published As

Publication number Publication date
JPS6367332B2 (enrdf_load_stackoverflow) 1988-12-26

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