JPS56140623A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56140623A
JPS56140623A JP4418180A JP4418180A JPS56140623A JP S56140623 A JPS56140623 A JP S56140623A JP 4418180 A JP4418180 A JP 4418180A JP 4418180 A JP4418180 A JP 4418180A JP S56140623 A JPS56140623 A JP S56140623A
Authority
JP
Japan
Prior art keywords
tube
crystalline
quartz
transparent quartz
transparent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4418180A
Other languages
Japanese (ja)
Other versions
JPS6011802B2 (en
Inventor
Nobuo Kawase
Masayoshi Aigou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55044181A priority Critical patent/JPS6011802B2/en
Publication of JPS56140623A publication Critical patent/JPS56140623A/en
Publication of JPS6011802B2 publication Critical patent/JPS6011802B2/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

PURPOSE:To perform very stable, high quality, high temperature reaction treatment by performing high temperature reaction treatment on a semiconductor sub- strate in a crystalline quartz tube having a transparent quartz layer on the inner surface thereof. CONSTITUTION:The structure of the crystalline tube is constituted such that a cylindrical region 2 containing a heating furnace inserting region 1 comprises a high purity crystalline quartz sintered tube 4, on the inner surface layer of which a transparent quartz layer 3 is formed. One end of the sintered tube 4 is melted and sealed by a thick transparent quartz lid 6 having a tail tube 5, and at the other end, a specimen introducing part 7 comprising a thick transparent quartz tube is formed. In this constitution of the reacting tube, since the crystalline quartz tube has excellent heat uniformity, sufficient heat uniformity can be obtained even though the heat uniformity tube is not specifically provided at the outer periphery. Since the strength of the crystalline quartz tube at a normal temperature is far greater than the transparent crystal tube, the deformation life is greatly lengthend in comparison with the transparent quartz tube. As a result, the increase in the yield rates in manufacture, stabilization of the manufacturing quality, and the large reduction in manufacturing costs can be realized.
JP55044181A 1980-04-04 1980-04-04 Manufacturing method of semiconductor device Expired JPS6011802B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55044181A JPS6011802B2 (en) 1980-04-04 1980-04-04 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55044181A JPS6011802B2 (en) 1980-04-04 1980-04-04 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS56140623A true JPS56140623A (en) 1981-11-04
JPS6011802B2 JPS6011802B2 (en) 1985-03-28

Family

ID=12684397

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55044181A Expired JPS6011802B2 (en) 1980-04-04 1980-04-04 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6011802B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61296711A (en) * 1985-06-24 1986-12-27 モトロ−ラ・インコ−ポレ−テツド Processing of semiconductor wafer using non-fastening boat
JPS62276824A (en) * 1986-04-01 1987-12-01 Deisuko Haitetsuku:Kk Outside-air inclusion preventive device for vertical type semiconductor thermal treatment equipment
JPH01220435A (en) * 1988-02-29 1989-09-04 Tel Sagami Ltd Vapor growth furnace
JPH0692779A (en) * 1992-04-27 1994-04-05 Shin Etsu Handotai Co Ltd Quartz crucible for pulling up single crystal
JPH10163122A (en) * 1996-11-29 1998-06-19 Fukui Shinetsu Sekiei:Kk Semiconductor wafer heat treating apparatus and furnace core tube

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4959818A (en) * 1972-08-05 1974-06-11

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4959818A (en) * 1972-08-05 1974-06-11

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61296711A (en) * 1985-06-24 1986-12-27 モトロ−ラ・インコ−ポレ−テツド Processing of semiconductor wafer using non-fastening boat
JPH0317370B2 (en) * 1985-06-24 1991-03-07 Motorola Inc
JPS62276824A (en) * 1986-04-01 1987-12-01 Deisuko Haitetsuku:Kk Outside-air inclusion preventive device for vertical type semiconductor thermal treatment equipment
JPH01220435A (en) * 1988-02-29 1989-09-04 Tel Sagami Ltd Vapor growth furnace
JPH0692779A (en) * 1992-04-27 1994-04-05 Shin Etsu Handotai Co Ltd Quartz crucible for pulling up single crystal
JPH10163122A (en) * 1996-11-29 1998-06-19 Fukui Shinetsu Sekiei:Kk Semiconductor wafer heat treating apparatus and furnace core tube

Also Published As

Publication number Publication date
JPS6011802B2 (en) 1985-03-28

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